|
English
|
正體中文
|
简体中文
|
Total items :0
|
|
Visitors :
53340515
Online Users :
671
Project Commissioned by the Ministry of Education
Project Executed by National Taiwan University Library
|
|
|
|
Taiwan Academic Institutional Repository >
Browse by Author
|
"施君興"
Showing items 1-10 of 23 (3 Page(s) Totally)
1 2 3 > >>
View [10|25|50] records per page
| 國立暨南國際大學 |
2014 |
Physical properties and analytical models of band-to-band tunneling in low-bandgap semiconductors
|
施君興; Shih, CH |
| 國立暨南國際大學 |
2013 |
Operation and scalability of dopant-segregated Schottky barrier MOSFETs with recessed channels
|
施君興; Shih, CH |
| 國立暨南國際大學 |
2013 |
A Localized Two-Bit/Cell Nanowire SONOS Memory Using Schottky Barrier Source-Side Injected Programming
|
施君興; Shih, CH |
| 國立暨南國際大學 |
2013 |
Physical operation and device design of short-channel tunnel field-effect transistors with graded silicon-germanium heterojunctions
|
施君興; Shih, CH |
| 國立暨南國際大學 |
2012 |
Multilevel Schottky Barrier Nanowire SONOS Memory With Ambipolar n- and p-Channel Cells
|
施君興; Shih, CH |
| 國立暨南國際大學 |
2012 |
On-current limitation of high-k gate insulator MOSFETs
|
施君興; Shih, CH |
| 國立暨南國際大學 |
2012 |
Reading Operation and Cell Scalability of Nonvolatile Schottky barrier Multibit Charge-Trapping Memory Cells
|
施君興; Shih, CH |
| 國立暨南國際大學 |
2011 |
Schottky Barrier Silicon Nanowire SONOS Memory With Ultralow Programming and Erasing Voltages
|
施君興?; Shih, CH |
| 國立暨南國際大學 |
2011 |
Impact of Edge Encroachment on Programming and Erasing Gate Current in NAND-Type Flash Memory
|
施君興?; Shih, CH |
| 國立暨南國際大學 |
2011 |
A Source-Side Injection Lucky Electron Model for Schottky Barrier Metal-Oxide-Semiconductor Devices
|
施君興?; Shih, CH |
Showing items 1-10 of 23 (3 Page(s) Totally)
1 2 3 > >>
View [10|25|50] records per page
|
