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"林浩雄"

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Showing items 101-150 of 260 (6 Page(s) Totally)
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Institution	Date	Title	Author
國立臺灣大學	1993	砷化鋁鎵異質接面雙極電晶體積體化技術之研究:重點研究群子計劃之二	林浩雄; Lin, Hao-Hsiung
國立臺灣大學	1993	Stress-Induced Outdiffusion of Be in P+ GaAs Prepared by Molecular Beam Epitaxy	Liu, B. D.; Shieh, T. H.; Wu, Ming-Yen; Chang, T. C.; 李嗣涔; 林浩雄; Liu, B. D.; Shieh, T. H.; Wu, Ming-Yen; Chang, T. C.; Lee, Si-Chen; Lin, Hao-Hsiung
國立臺灣大學	1993	Effect of a Two-Dimensional Electron Gas on the DC Characteristics of InAlAs/InGaAs Double Heterojunction Bipolar Transistors	Huang, Chang-Hsiu; 林浩雄; Huang, Chang-Hsiu; Lin, Hao-Hsiung
國立臺灣大學	1993	Effect of Supersaturation on the Interface Abruptness of AlGaAs/GaAs/AlGaAs Quantum Well Grown by Liquid Phase Epitaxy	Chen, M. K.; Chang, T. C.; 林浩雄; Chen, M. K.; Chang, T. C.; Lin, Hao-Hsiung
國立臺灣大學	1993	Effects of Dispersive Two-Photon Transitions on Femtosecond Pulse Propagation in Semiconductor Waveguides	Yang, C. C.; Villeneuve, A.; Stegeman, G. I.; Lin, C. H.; 林浩雄; Yang, C. C.; Villeneuve, A.; Stegeman, G. I.; Lin, C. H.; Lin, Hao-Hsiung
國立臺灣大學	1993	Injection Current Model of a MOS Diode Under Charge Sharing Mode Readou Operation	Wu, C. W.; 林浩雄; Wu, C. W.; Lin, Hao-Hsiung
國立臺灣大學	1993	Measurements of Two-Photon Absorption Coefficient and Induced Nonlinear Refractive-Index in GaAs/AlGaAs Multiquantum Well Waveguide	Yang, C. C.; Villeneuve, A.; Stegeman, G. I.; Lin, C. H.; 林浩雄; Yang, C. C.; Villeneuve, A.; Stegeman, G. I.; Lin, C. H.; Lin, Hao-Hsiung
國立臺灣大學	1993	Nonlinear Polarization Switching Near Half the Band Gap in Semiconductors	Yang, C. C.; Villeneuve, A.; Stegeman, G. I.; Lin, C. H.; 林浩雄; Chiou, I. P; Yang, C. C.; Villeneuve, A.; Stegeman, G. I.; Lin, C. H.; Lin, Hao-Hsiung; Chiou, I. P
國立臺灣大學	1993	Nonlinear Refractive-Index Near Half the Band Gap in AlGaAs	Villeneuve, A.; Yang, C. C.; Stegeman, G. I.; Lin, C. H.; 林浩雄; Villeneuve, A.; Yang, C. C.; Stegeman, G. I.; Lin, C. H.; Lin, Hao-Hsiung
國立臺灣大學	1993	Two-Phase Liquid Phase Epitaxy of Growing In0.53Ga0.47As on InP	Chen, M. K.; 林浩雄; Chen, M. K.; Lin, Hao-Hsiung
國立臺灣大學	1993	AlGaAs/GaAs Heterojunction Bipolar Transistor on GaAs(111) Substrate by Molecular Beam Epitaxy	Lee, T. L.; Chu, W. D.; 林浩雄; Lee, T. L.; Chu, W. D.; Lin, Hao-Hsiung
國立臺灣大學	1993	Anisotropic Two-Photon Absorption Coefficient and Induced Nonlinear Refractive-Index in GaAs/AlGaAs Multiple Quantum Well Waveguide	Yang, C. C.; Villeneuve, A.; Stegeman, G. I.; Lin, C. H.; 林浩雄; Yang, C. C.; Villeneuve, A.; Stegeman, G. I.; Lin, C. H.; Lin, Hao-Hsiung
國立臺灣大學	1993	Dark Current Analysis of InSB MIS Capacitors	Wu, C. W.; 林浩雄; Wu, C. W.; Lin, Hao-Hsiung
國立臺灣大學	1993	DC Characteristics of In0.52Al0.48As/in0.53Ga0.47As/in0.53(AlxGa1-X) 0.47As Double Heterojunction Bipolar Transitors	Huang, Chang-Hsiu; Lee, T. L.; 林浩雄; Huang, Chang-Hsiu; Lee, T. L.; Lin, Hao-Hsiung
國立臺灣大學	1993	Deep Level Analysis of MBE Grown InAlAs Strained Layers	Liu, J. S.; Lee, T. L.; 林浩雄; Wu, C. W.; Liu, J. S.; Lee, T. L.; Lin, Hao-Hsiung; Wu, C. W.
國立臺灣大學	1993	Effects of Two-Photon Transition on Femtosecond Pulse Propagation in Multiple Quantum Well Waveguides	Yang, C. C.; Villeneuve, A.; Stegeman, G. I.; Lin, C. H.; 林浩雄; Yang, C. C.; Villeneuve, A.; Stegeman, G. I.; Lin, C. H.; Lin, Hao-Hsiung
國立臺灣大學	1993	Investigations of InGaAs/InAlAs Double-Barrier Resonant Tunneling Diode	Tu, C. H.; Chen, J. G.; Huang, Chang-Hsiu; 林浩雄; Tu, C. H.; Chen, J. G.; Huang, Chang-Hsiu; Lin, Hao-Hsiung
國立臺灣大學	1993	On the Fabrication of In0.52Al0.48As/In0.53Ga0.47As Monolithic Photoreceiver	Yang, T. F.; Tu, C. H.; Lee, T. L.; 林浩雄; Tu, Y. K.; Yang, T. F.; Tu, C. H.; Lee, T. L.; Lin, Hao-Hsiung; Tu, Y. K.
國立臺灣大學	1993	On the High Frequency Properties of InGaAs Bipolar Transistors	Lin, C. H.; Lee, T. L.; Huang, Chang-Hsiu; 林浩雄; Lin, C. H.; Lee, T. L.; Huang, Chang-Hsiu; Lin, Hao-Hsiung
國立臺灣大學	1993	Optical Nonlinarities Near Half the Band Gap in Semiconductors and Their Applications	Yang, C. C.; Villencuve, A.; Wigley, P. G.; Stegeman, G. I.; Lin, C. H.; 林浩雄; Yang, C. C.; Villencuve, A.; Wigley, P. G.; Stegeman, G. I.; Lin, C. H.; Lin, Hao-Hsiung
國立臺灣大學	1993	Proximity Contact Effect on the DC Characteristics of InGaAs-Based Bipolar Transistors	Huang, Chang-Hsiu; Lin, C. H.; 林浩雄; Huang, Chang-Hsiu; Lin, C. H.; Lin, Hao-Hsiung
國立臺灣大學	1993	Studies of Two-Photon Transition Nonlinearities Near Half the Band Gap in Semiconductor Based on AlGaAs for Nonlinear Switching	Yang, C. C.; Villeneuve, A.; Stegeman, G. I.; Lin, C. H.; 林浩雄; Yang, C. C.; Villeneuve, A.; Stegeman, G. I.; Lin, C. H.; Lin, Hao-Hsiung
國立臺灣大學	1993	Two-Dimensional Calculation on the Band-to-Band Tunneling Current of Indium Antimonide Charge Injection Devices	Wu, C. W.; 林浩雄; Wu, C. W.; Lin, Hao-Hsiung
國立臺灣大學	1993	Ultrafast All-Optical Polarization Switching Near Half the Band Gap in Semiconductors	Yang, C. C.; Villeneuve, A.; Stegeman, G. I.; Lin, C. H.; 林浩雄; Yang, C. C.; Villeneuve, A.; Stegeman, G. I.; Lin, C. H.; Lin, Hao-Hsiung
臺大學術典藏	1993	InAlAs/InGaAs異質接面雙極電晶體之研究	林浩雄; 林浩雄
臺大學術典藏	1993	砷化銦鋁鎵光偵測器及光接收器之研究	林浩雄; 林浩雄
臺大學術典藏	1993	AlGaAs/GaAs Heterojunction Bipolar Transistor on GaAs(111) Substrate by Molecular Beam Epitaxy	Lee, T. L.; Chu, W. D.; Lin, Hao-Hsiung; Lee, T. L.; Chu, W. D.; 林浩雄; Lin, Hao-Hsiung
臺大學術典藏	1993	Anisotropic Two-Photon Absorption Coefficient and Induced Nonlinear Refractive-Index in GaAs/AlGaAs Multiple Quantum Well Waveguide	Stegeman, G. I.; Lin, C. H.; Yang, C. C.; Villeneuve, A.; Lin, C. H.; Lin, Hao-Hsiung; Yang, C. C.; Villeneuve, A.; Stegeman, G. I.; Lin, C. H.; 林浩雄; Yang, C. C.; Villeneuve, A.; Lin, C. H.; Lin, Hao-Hsiung
臺大學術典藏	1993	Dark Current Analysis of InSB MIS Capacitors	Wu, C. W.; Lin, Hao-Hsiung; Wu, C. W.; 林浩雄; Lin, Hao-Hsiung
臺大學術典藏	1993	DC Characteristics of In0.52Al0.48As/in0.53Ga0.47As/in0.53(AlxGa1-X) 0.47As Double Heterojunction Bipolar Transitors	Lin, Hao-Hsiung; 林浩雄; Lee, T. L.; Huang, Chang-Hsiu; Lee, T. L.; Lin, Hao-Hsiung; Huang, Chang-Hsiu
臺大學術典藏	1993	Effects of Two-Photon Transition on Femtosecond Pulse Propagation in Multiple Quantum Well Waveguides	Lin, Hao-Hsiung; Stegeman, G. I.; Lin, C. H.; Yang, C. C.; Villeneuve, A.; Lin, Hao-Hsiung; Yang, C. C.; Villeneuve, A.; Stegeman, G. I.; Lin, C. H.; 林浩雄; Yang, C. C.; Villeneuve, A.
臺大學術典藏	1993	On the Fabrication of In0.52Al0.48As/In0.53Ga0.47As Monolithic Photoreceiver	Yang, T. F.; Tu, C. H.; Lee, T. L.; Tu, Y. K.; Lin, Hao-Hsiung; Yang, T. F.; Tu, C. H.; Lee, T. L.; 林浩雄; Tu, Y. K.; Tu, C. H.; Lin, Hao-Hsiung
臺大學術典藏	1993	On the High Frequency Properties of InGaAs Bipolar Transistors	Lee, T. L.; Huang, Chang-Hsiu; Lin, C. H.; Lin, Hao-Hsiung; Lin, C. H.; Lee, T. L.; Huang, Chang-Hsiu; 林浩雄; Lin, C. H.; Lin, Hao-Hsiung
臺大學術典藏	1993	Optical Nonlinarities Near Half the Band Gap in Semiconductors and Their Applications	Yang, C. C.; Villencuve, A.; Wigley, P. G.; Stegeman, G. I.; Lin, C. H.; Lin, Hao-Hsiung; Yang, C. C.; Villencuve, A.; Wigley, P. G.; Stegeman, G. I.; Lin, C. H.; 林浩雄; Wigley, P. G.; Stegeman, G. I.; Lin, C. H.; Lin, Hao-Hsiung
臺大學術典藏	1993	Proximity Contact Effect on the DC Characteristics of InGaAs-Based Bipolar Transistors	Lin, C. H.; Huang, Chang-Hsiu; Lin, Hao-Hsiung; Huang, Chang-Hsiu; Lin, C. H.; 林浩雄; Huang, Chang-Hsiu; Lin, Hao-Hsiung
臺大學術典藏	1993	Studies of Two-Photon Transition Nonlinearities Near Half the Band Gap in Semiconductor Based on AlGaAs for Nonlinear Switching	Yang, C. C.; Villeneuve, A.; Stegeman, G. I.; Lin, C. H.; Lin, Hao-Hsiung; Yang, C. C.; Villeneuve, A.; Stegeman, G. I.; Lin, C. H.; 林浩雄; Villeneuve, A.; Stegeman, G. I.; Lin, C. H.; Lin, Hao-Hsiung
臺大學術典藏	1993	Two-Dimensional Calculation on the Band-to-Band Tunneling Current of Indium Antimonide Charge Injection Devices	Wu, C. W.; Lin, Hao-Hsiung; Wu, C. W.; 林浩雄; Lin, Hao-Hsiung
臺大學術典藏	1993	Ultrafast All-Optical Polarization Switching Near Half the Band Gap in Semiconductors	Yang, C. C.; Villeneuve, A.; Stegeman, G. I.; Lin, C. H.; Lin, Hao-Hsiung; Yang, C. C.; Villeneuve, A.; Stegeman, G. I.; Lin, C. H.; 林浩雄; Villeneuve, A.; Stegeman, G. I.; Lin, C. H.; Lin, Hao-Hsiung
臺大學術典藏	1993	砷化鋁鎵異質接面雙極電晶體積體化技術之研究:重點研究群子計劃之二	林浩雄; 林浩雄
臺大學術典藏	1993	Effect of a Two-Dimensional Electron Gas on the DC Characteristics of InAlAs/InGaAs Double Heterojunction Bipolar Transistors	Huang, Chang-Hsiu; Lin, Hao-Hsiung; Huang, Chang-Hsiu; 林浩雄; Lin, Hao-Hsiung
臺大學術典藏	1993	Effect of Supersaturation on the Interface Abruptness of AlGaAs/GaAs/AlGaAs Quantum Well Grown by Liquid Phase Epitaxy	Chen, M. K.; Chang, T. C.; Lin, Hao-Hsiung; Chen, M. K.; Chang, T. C.; 林浩雄; Chang, T. C.; Lin, Hao-Hsiung
臺大學術典藏	1993	Effects of Dispersive Two-Photon Transitions on Femtosecond Pulse Propagation in Semiconductor Waveguides	Stegeman, G. I.; Lin, C. H.; Yang, C. C.; Villeneuve, A.; Lin, Hao-Hsiung; Yang, C. C.; Villeneuve, A.; Stegeman, G. I.; Lin, C. H.; 林浩雄; Yang, C. C.; Villeneuve, A.; Lin, Hao-Hsiung
臺大學術典藏	1993	Injection Current Model of a MOS Diode Under Charge Sharing Mode Readou Operation	Wu, C. W.; Lin, Hao-Hsiung; Wu, C. W.; 林浩雄; Lin, Hao-Hsiung
臺大學術典藏	1993	Nonlinear Polarization Switching Near Half the Band Gap in Semiconductors	Yang, C. C.; Villeneuve, A.; Stegeman, G. I.; Lin, C. H.; Chiou, I. P; Stegeman, G. I.; Lin, Hao-Hsiung; Yang, C. C.; Villeneuve, A.; Stegeman, G. I.; Lin, C. H.; 林浩雄; Chiou, I. P; Yang, C. C.; Stegeman, G. I.; Lin, Hao-Hsiung
臺大學術典藏	1993	Nonlinear Refractive-Index Near Half the Band Gap in AlGaAs	Villeneuve, A.; Yang, C. C.; Stegeman, G. I.; Lin, C. H.; Lin, Hao-Hsiung; Villeneuve, A.; Yang, C. C.; Stegeman, G. I.; Lin, C. H.; 林浩雄; Yang, C. C.; Stegeman, G. I.; Lin, C. H.; Lin, Hao-Hsiung
臺大學術典藏	1993	Two-Phase Liquid Phase Epitaxy of Growing In0.53Ga0.47As on InP	Chen, M. K.; Chen, M. K.; Lin, Hao-Hsiung; Chen, M. K.; 林浩雄; Chen, M. K.; Lin, Hao-Hsiung
臺大學術典藏	1993	Investigations of InGaAs/InAlAs Double-Barrier Resonant Tunneling Diode	Chen, J. G.; Huang, Chang-Hsiu; Tu, C. H.; Lin, Hao-Hsiung; Tu, C. H.; Chen, J. G.; Huang, Chang-Hsiu; 林浩雄; Tu, C. H.; Huang, Chang-Hsiu; Lin, Hao-Hsiung
國立臺灣大學	1992	生物能場本質之研究	林浩雄; 李嗣涔; Lin, Hao-Hsiung; Lee, Si-Chen
國立臺灣大學	1992	氣功態分類及外氣的性質	林浩雄; 李嗣涔; Lin, Hao-Hsiung; Lee, Si-Chen
國立臺灣大學	1992	Current Transport Characteristics of P+/N AlxGa1-XAs Homojunction Diode	林浩雄; Liu, Y. S.; Lin, Hao-Hsiung; Liu, Y. S.

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