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"林浩雄"的相關文件
顯示項目 106-130 / 260 (共11頁) << < 1 2 3 4 5 6 7 8 9 10 > >> 每頁顯示[10|25|50]項目
| 國立臺灣大學 |
1993 |
Injection Current Model of a MOS Diode Under Charge Sharing Mode Readou Operation
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Wu, C. W.; 林浩雄; Wu, C. W.; Lin, Hao-Hsiung |
| 國立臺灣大學 |
1993 |
Measurements of Two-Photon Absorption Coefficient and Induced Nonlinear Refractive-Index in GaAs/AlGaAs Multiquantum Well Waveguide
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Yang, C. C.; Villeneuve, A.; Stegeman, G. I.; Lin, C. H.; 林浩雄; Yang, C. C.; Villeneuve, A.; Stegeman, G. I.; Lin, C. H.; Lin, Hao-Hsiung |
| 國立臺灣大學 |
1993 |
Nonlinear Polarization Switching Near Half the Band Gap in Semiconductors
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Yang, C. C.; Villeneuve, A.; Stegeman, G. I.; Lin, C. H.; 林浩雄; Chiou, I. P; Yang, C. C.; Villeneuve, A.; Stegeman, G. I.; Lin, C. H.; Lin, Hao-Hsiung; Chiou, I. P |
| 國立臺灣大學 |
1993 |
Nonlinear Refractive-Index Near Half the Band Gap in AlGaAs
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Villeneuve, A.; Yang, C. C.; Stegeman, G. I.; Lin, C. H.; 林浩雄; Villeneuve, A.; Yang, C. C.; Stegeman, G. I.; Lin, C. H.; Lin, Hao-Hsiung |
| 國立臺灣大學 |
1993 |
Two-Phase Liquid Phase Epitaxy of Growing In0.53Ga0.47As on InP
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Chen, M. K.; 林浩雄; Chen, M. K.; Lin, Hao-Hsiung |
| 國立臺灣大學 |
1993 |
AlGaAs/GaAs Heterojunction Bipolar Transistor on GaAs(111) Substrate by Molecular Beam Epitaxy
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Lee, T. L.; Chu, W. D.; 林浩雄; Lee, T. L.; Chu, W. D.; Lin, Hao-Hsiung |
| 國立臺灣大學 |
1993 |
Anisotropic Two-Photon Absorption Coefficient and Induced Nonlinear Refractive-Index in GaAs/AlGaAs Multiple Quantum Well Waveguide
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Yang, C. C.; Villeneuve, A.; Stegeman, G. I.; Lin, C. H.; 林浩雄; Yang, C. C.; Villeneuve, A.; Stegeman, G. I.; Lin, C. H.; Lin, Hao-Hsiung |
| 國立臺灣大學 |
1993 |
Dark Current Analysis of InSB MIS Capacitors
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Wu, C. W.; 林浩雄; Wu, C. W.; Lin, Hao-Hsiung |
| 國立臺灣大學 |
1993 |
DC Characteristics of In0.52Al0.48As/in0.53Ga0.47As/in0.53(AlxGa1-X) 0.47As Double Heterojunction Bipolar Transitors
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Huang, Chang-Hsiu; Lee, T. L.; 林浩雄; Huang, Chang-Hsiu; Lee, T. L.; Lin, Hao-Hsiung |
| 國立臺灣大學 |
1993 |
Deep Level Analysis of MBE Grown InAlAs Strained Layers
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Liu, J. S.; Lee, T. L.; 林浩雄; Wu, C. W.; Liu, J. S.; Lee, T. L.; Lin, Hao-Hsiung; Wu, C. W. |
| 國立臺灣大學 |
1993 |
Effects of Two-Photon Transition on Femtosecond Pulse Propagation in Multiple Quantum Well Waveguides
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Yang, C. C.; Villeneuve, A.; Stegeman, G. I.; Lin, C. H.; 林浩雄; Yang, C. C.; Villeneuve, A.; Stegeman, G. I.; Lin, C. H.; Lin, Hao-Hsiung |
| 國立臺灣大學 |
1993 |
Investigations of InGaAs/InAlAs Double-Barrier Resonant Tunneling Diode
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Tu, C. H.; Chen, J. G.; Huang, Chang-Hsiu; 林浩雄; Tu, C. H.; Chen, J. G.; Huang, Chang-Hsiu; Lin, Hao-Hsiung |
| 國立臺灣大學 |
1993 |
On the Fabrication of In0.52Al0.48As/In0.53Ga0.47As Monolithic Photoreceiver
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Yang, T. F.; Tu, C. H.; Lee, T. L.; 林浩雄; Tu, Y. K.; Yang, T. F.; Tu, C. H.; Lee, T. L.; Lin, Hao-Hsiung; Tu, Y. K. |
| 國立臺灣大學 |
1993 |
On the High Frequency Properties of InGaAs Bipolar Transistors
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Lin, C. H.; Lee, T. L.; Huang, Chang-Hsiu; 林浩雄; Lin, C. H.; Lee, T. L.; Huang, Chang-Hsiu; Lin, Hao-Hsiung |
| 國立臺灣大學 |
1993 |
Optical Nonlinarities Near Half the Band Gap in Semiconductors and Their Applications
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Yang, C. C.; Villencuve, A.; Wigley, P. G.; Stegeman, G. I.; Lin, C. H.; 林浩雄; Yang, C. C.; Villencuve, A.; Wigley, P. G.; Stegeman, G. I.; Lin, C. H.; Lin, Hao-Hsiung |
| 國立臺灣大學 |
1993 |
Proximity Contact Effect on the DC Characteristics of InGaAs-Based Bipolar Transistors
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Huang, Chang-Hsiu; Lin, C. H.; 林浩雄; Huang, Chang-Hsiu; Lin, C. H.; Lin, Hao-Hsiung |
| 國立臺灣大學 |
1993 |
Studies of Two-Photon Transition Nonlinearities Near Half the Band Gap in Semiconductor Based on AlGaAs for Nonlinear Switching
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Yang, C. C.; Villeneuve, A.; Stegeman, G. I.; Lin, C. H.; 林浩雄; Yang, C. C.; Villeneuve, A.; Stegeman, G. I.; Lin, C. H.; Lin, Hao-Hsiung |
| 國立臺灣大學 |
1993 |
Two-Dimensional Calculation on the Band-to-Band Tunneling Current of Indium Antimonide Charge Injection Devices
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Wu, C. W.; 林浩雄; Wu, C. W.; Lin, Hao-Hsiung |
| 國立臺灣大學 |
1993 |
Ultrafast All-Optical Polarization Switching Near Half the Band Gap in Semiconductors
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Yang, C. C.; Villeneuve, A.; Stegeman, G. I.; Lin, C. H.; 林浩雄; Yang, C. C.; Villeneuve, A.; Stegeman, G. I.; Lin, C. H.; Lin, Hao-Hsiung |
| 臺大學術典藏 |
1993 |
InAlAs/InGaAs異質接面雙極電晶體之研究
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林浩雄; 林浩雄 |
| 臺大學術典藏 |
1993 |
砷化銦鋁鎵光偵測器及光接收器之研究
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林浩雄; 林浩雄 |
| 臺大學術典藏 |
1993 |
AlGaAs/GaAs Heterojunction Bipolar Transistor on GaAs(111) Substrate by Molecular Beam Epitaxy
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Lee, T. L.; Chu, W. D.; Lin, Hao-Hsiung; Lee, T. L.; Chu, W. D.; 林浩雄; Lin, Hao-Hsiung |
| 臺大學術典藏 |
1993 |
Anisotropic Two-Photon Absorption Coefficient and Induced Nonlinear Refractive-Index in GaAs/AlGaAs Multiple Quantum Well Waveguide
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Stegeman, G. I.; Lin, C. H.; Yang, C. C.; Villeneuve, A.; Lin, C. H.; Lin, Hao-Hsiung; Yang, C. C.; Villeneuve, A.; Stegeman, G. I.; Lin, C. H.; 林浩雄; Yang, C. C.; Villeneuve, A.; Lin, C. H.; Lin, Hao-Hsiung |
| 臺大學術典藏 |
1993 |
Dark Current Analysis of InSB MIS Capacitors
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Wu, C. W.; Lin, Hao-Hsiung; Wu, C. W.; 林浩雄; Lin, Hao-Hsiung |
| 臺大學術典藏 |
1993 |
DC Characteristics of In0.52Al0.48As/in0.53Ga0.47As/in0.53(AlxGa1-X) 0.47As Double Heterojunction Bipolar Transitors
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Lin, Hao-Hsiung; 林浩雄; Lee, T. L.; Huang, Chang-Hsiu; Lee, T. L.; Lin, Hao-Hsiung; Huang, Chang-Hsiu |
顯示項目 106-130 / 260 (共11頁) << < 1 2 3 4 5 6 7 8 9 10 > >> 每頁顯示[10|25|50]項目
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