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"林浩雄"

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Showing items 211-220 of 260  (26 Page(s) Totally)
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Institution Date Title Author
國立臺灣大學 1989 Abrupt Heterointerfaces in Al0.35Ga0.65As/Al0.05Ga0.95As/Al0.35Ga0.65As Quantum Well Structure Grown by Liquid Phase Epitaxy Chen, J. A.; Lee, J. H.; 李嗣涔; 林浩雄; Chen, J. A.; Lee, J. H.; Lee, Si-Chen; Lin, Hao-Hsiung
國立臺灣大學 1989 Y-Junction and Misaligned-Stripe Diode Laser Arrays with Nonuniform Refective Diffraction Coupler Lay, T. S.; 李嗣涔; 林浩雄; Lay, T. S.; Lee, Si-Chen; Lin, Hao-Hsiung
國立臺灣大學 1989 Fabrication and Characteristics of AlGaAs/GaAs Heterojunction Bipolar Transistors (HJBT's) Using a New Emitter-Edge-Thinning Design Ting, Jing-Lung; 林浩雄; 李嗣涔; Ting, Jing-Lung; Lin, Hao-Hsiung; Lee, Si-Chen
國立臺灣大學 1989 Minority-Carrier Lifetime Measurement Using an Al/SiO2/p-Si MOS Capacitor 林浩雄; Jih, H. J.; Lin, Hao-Hsiung; Jih, H. J.
國立臺灣大學 1989 Two-Dimensional Simulation on the Electric Field Distribution of Indium Antimonide (InSb) Charge Injection Devices (CID's) Wu, C. W.; 林浩雄; Wu, C. W.; Lin, Hao-Hsiung
臺大學術典藏 1989 Minority-Carrier Lifetime Measurement Using an Al/SiO2/p-Si MOS Capacitor Lin, Hao-Hsiung; Jih, H. J.; 林浩雄; Jih, H. J.; Lin, Hao-Hsiung; Jih, H. J.
臺大學術典藏 1989 Two-Dimensional Simulation on the Electric Field Distribution of Indium Antimonide (InSb) Charge Injection Devices (CID's) Wu, C. W.; Lin, Hao-Hsiung; Wu, C. W.; 林浩雄; Lin, Hao-Hsiung
臺大學術典藏 1989 Abrupt Heterointerfaces in Al0.35Ga0.65As/Al0.05Ga0.95As/Al0.35Ga0.65As Quantum Well Structure Grown by Liquid Phase Epitaxy Chen, J. A.; Lee, J. H.; Lee, Si-Chen; Lin, Hao-Hsiung; Chen, J. A.; Lee, J. H.; 李嗣涔; 林浩雄; Chen, J. A.; Lee, J. H.; Lee, Si-Chen; Lin, Hao-Hsiung
臺大學術典藏 1989 Y-Junction and Misaligned-Stripe Diode Laser Arrays with Nonuniform Refective Diffraction Coupler Lay, T. S.; Lee, Si-Chen; Lin, Hao-Hsiung; Lay, T. S.; 李嗣涔; 林浩雄; Lee, Si-Chen; Lin, Hao-Hsiung
國立臺灣大學 1988 砷化銦鋁鎵光電元件技術研究 林浩雄; Lin, Hao-Hsiung

Showing items 211-220 of 260  (26 Page(s) Totally)
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