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"林秀玟"

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Institution	Date	Title	Author
國立交通大學	2014-12-12T03:00:51Z	以1.95奈米閘極厚度之65奈米互補式金屬氧化半導體元件實現之具可靠度及容許高壓輸入之雙電源輸出輸入介面電路設計	林秀玟; Hsiu-Wen Lin; 黃威; Wei Hwang

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