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"陳開煌"
Showing items 66-71 of 71 (3 Page(s) Totally)
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| 東方設計學院 |
2007-12-20 |
Fabricate Non-Volatile Ferroelectric Random Access Memory Devices using BTV as Gate Oxide
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Chen, Kai-Huang; 陳開煌; Yang, Cheng-Fu; (東方技術學院電子與資訊系) |
| 東方設計學院 |
2007-11 |
探討Bi4(Ti2.97V0.03)O12/Ba(Zr0.1Ti0.9)O3雙層結構特性於非揮發性鐵電記憶體元件之應用
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陳開煌; Chen, Kai-Huang; 楊證富Yang, Cheng-Fu; 吳冠宏; Wu, Guan-Hung; (東方技術學院電子與資訊系) |
| 東方設計學院 |
2007-11 |
鐵電材料Ba(Zr0.1Ti0.9)O3陶瓷介電特性開發
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陳開煌; Chen, Kai-Huang; 楊證富Yang, Cheng-Fu; 吳冠宏; Wu, Guan-Hung; (東方技術學院電子與資訊系) |
| 東方設計學院 |
2007-09-13 |
Physical and Electrical Characteristics of Vanadium Doped Bi4Ti3O12 Thin Films for Applications in Nonvolatile Memory Devices
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陳開煌; Chen, Kai-Huang; Yang, Cheng-Fu; Chen, Lu-Ni; (東方技術學院電子與資訊系) |
| 國立中山大學 |
2007-08-06 |
鋯鈦酸鋇鐵電薄膜記憶元件之研究
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陳開煌 |
| 東方設計學院 |
2007 |
Physical and electrical characteristics of Ba(Zr0.1Ti0.9)O3 thin films under oxygen plasma treatment for applications in nonvolatile memory devices
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Yang, Cheng-Fu; Chen, Kai-Huang; 陳開煌; Chen, Ying-Chung; Chang, Ting-Chang; (東方技術學院電子與資訊系) |
Showing items 66-71 of 71 (3 Page(s) Totally)
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