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Institution	Date	Title	Author
國立成功大學	2009	Improved hydrogen gas generation rate of n-GaN photoelectrode with SiO2 protection layer on the Ohmic contacts from the electrolyte	Liu, Shu-Yen; �Sheu, �Jinn-Kong; Tseng, Chun-Kai; Ye, Jhao-Cheng; Chang, K. H.; Lee, M. L.; Lai, W. C.
國立成功大學	2009	Array of GaN-based transverse junction blue light emitting diodes with regrown n-type regimes	Guol,� Shi-Hao; �Huang,� H. W.; �Lin, �C. S.; �Sheu, �Jinn-Kong; �Tin,� C. J.; �Kuo,� C. H.; �Shi, �Jin-Wei
國立成功大學	2009	Asymmetric external field effects on photoluminescence efficiency in a blue (In,Ga)N quantum-well diode with an additional n -type electron reservoir layer	Kenzo Fujiwara; Hirofumi Katou; Takao Inoue; �Sheu, �Jinn-Kong
國立成功大學	2008	The CL emission observation of the InGaN/GaN MQWs V shaped pits with different superlattices underlayers	Lai, W. C.; Huang, Y. S.; Yen, Y. W.; �Sheu, �Jinn-Kong; Hsueh, T. H.; �Kuo,� C. H.; �Chang,� Shoou-Jinn
國立成功大學	2008	Non-lithographic nanopatterning of InGaN/GaN multiple quantum well nanopillars by focused ion beams	Wu, S. E.; Hsueh, T. H.; Liu, C. P.; �Sheu, �Jinn-Kong; Lai, W. C.; �Chang,� Shoou-Jinn
國立成功大學	2007	Effect of Thermal Annealing on Ga-doped ZnO Films Prepared by Magnetron Cosputtering	�Sheu, �Jinn-Kong; Shu, K. W.; Lee, M. L.; Tun, C. J.; Chi, G. C.
國立成功大學	2007	Non-alloyed Cr/Au Ohmic contacts to n-GaN	Lee, M. L.; �Sheu, �Jinn-Kong; Hu, C. C.
國立成功大學	2006	Effects of thermal annealing on transparent Al-doped ZnO films deposited on p-GaN	Tun,�C.�J.; �Sheu, �Jinn-Kong; Lee, M. L.; Hu, C. C.; �Hsieh,� C. �K.; Chi, G. C.
國立成功大學	2006	Applications of transparent Al-doped ZnO contact on GaN-based power LED	Tun,�C.�J.; �Sheu, �Jinn-Kong; �Pong, �B.� J.; �Lee,� M.� L.; �Lee, �M.� Y.; �Hsieh,� C. �K.; Hu, C. C.; Chi,�G.�C.
國立成功大學	2005	Comparison of Low Temperature GaN/SiO2/Si3N4 as gate insulators on AlGaN/GaN Heterostructure Field Effect Transistors	Kao, C. J.; Chen, M. C.; Tun, C. J.; Chi, G. C.; �Sheu, �Jinn-Kong; Lai, W. C.; �Lee,� M.� L.; Ren, F.; Pearton, S. J.
國立成功大學	2005	Rectifying characteristics of WSix-GaN Schottky barrier diodes improved by using a low-temperature-grown GaN cap layer	�Sheu, �Jinn-Kong; Lee, M. L.; Lai, W. C.; Tseng, H. C.; Chi, G. C.
國立成功大學	2005	Effects of thermal annealing on Si-implanted GaN films grown at low temperature by metal-organic vapor-phase	�Sheu, �Jinn-Kong; Chen, S. S.; Lee, M. L.; Lai, W. C.; Chang, W. H.; Chi, G. C.
國立成功大學	2004	Enhanced radiative efficiency in blue InGaN MQW LEDs with an electron reservoir layer	Takahashi, Y.; Satake, A.; Fujiwara, K.; �Sheu, �Jinn-Kong; Jahn, U.; Kostial, H.; Grahn, H. T.
國立成功大學	2004	Si diffusion in p GaN	Pan, C. J.; Chi, G. C.; Pong, B. J.; �Sheu, �Jinn-Kong; Chen, J. Y.
國立成功大學	2003-01-01	GaN diffractive microlenses fabricated with gray-level mask	Chen, Chii-Chang; Li, Ming-Hung; �Sheu, �Jinn-Kong; Chi, Gou-Chung; Cheng, Wei-Tai; Yeh, Jui-Hung; Chang, Jenq-Yang; Ito, Toshiaki
國立成功大學	2003	Improvement of Near-Ultraviolet InGaN/GaN Light Emitting Diodes with an AlGaN Current-blocking Layer Grown at Low Temperature	Tu, Ru-Chin; Pan, Shyi-Ming; Chuo, Chang-Cheng; Tun, Chun-Ju; �Sheu, �Jinn-Kong; Tsai, Ching-En; Wang, Te-Chung; Chi. Gou-Chung
國立成功大學	2003	High brightness InGaN/GaN LEDs with indium-tin-oxide as p-electrode	Chang, C. S.; �Sheu, �Jinn-Kong; Su, Y. K.; Lai, W. C.; Kuo, C. H.; Wang, C. K.; Lin, Y. C.; Hsu, Y. P.; Shei, S. C.; Lo, H. M.; J. C. Ke; J. K. Sheu
國立成功大學	2003	Characterizations of GaN Schottky barrier photodetectors with a highly-resistivity low-temperature GaN cap layer	Lee, M. L.; �Sheu, �Jinn-Kong; Lai, W. C.; Chang, S. J.; Su, Y. K.; Chen, M. G.; Kao, C. J.; Tsai, J. M.; G.C.Chi
國立成功大學	2003	Nitride-Based Near-Ultraviolet Multiple-Quantum Well Light-Emitting Diodes with AlGaN Barrier Layers	Kao, C. J.; Chang, S. J.; Su, Y. K.; Wu, L. W.; �Sheu, �Jinn-Kong; Wen, T. C.; Lai, W. C.; Tsai, J. M.; S.C. Chen
國立成功大學	2003	GaInN light-emitting diodes with omni-directional reflectors	Gessmann, T.; Li, Y. L.; Schubert, E. F.; Graff, J. W.; �Sheu, �Jinn-Kong
國立成功大學	2003	MOCVD growth of InGaN/GaN blue light emitting diodes on patterned sapphire substrates	Chang, S. J.; Su, Y. K.; Lin, Y. C.; Chuang, R. W.; Chang, C. S.; �Sheu, �Jinn-Kong; Wen, T. C.; Shei, S. C.; Kuo, C. W.; Fang, D. H.
國立成功大學	2003	Low-dark-current GaN Metal-Semiconductor-Metal photodetectors with low-temperature GaN cap layer	Chang, S. J.; Lee, M. L.; �Sheu, �Jinn-Kong; Lai, W. C.; Su, Y. K.; Chang, C. S.; Kao, C. J.; Chi, G. C.; Tsai, J. M.
國立成功大學	2003	Improvement of InGaN/GaN laser diodes by using a Si-doped In0.23Ga0.77N/GaN short-period superlattice tunneling contact layer	Tu, Ru-Chin; Tun, Chun-Ju; �Sheu, �Jinn-Kong; Kuo, Wei-Hong; Wang, Te-Chung; Tsai, Ching-En; Hsu, Jung-Tsung; Chi, Jim; Chi, Gou-Chung
國立成功大學	2003	Electrical efficiency analysis of GaN-based LEDs with interdigitated mesa geometry	Ting, Yi-Sheng; Chen, Chii-Chang; �Sheu, �Jinn-Kong; Chi, Gou-Chung; Hsu, Jung-Tsung
國立成功大學	2003	Nitride-based LEDs with Si-Doped In0.23Ga0.77N/GaN Short-Period Superlattice Tunneling Contact Layer	Kuo, C. H.; Chang, S. J.; Su, Y. K.; Chen, J. F.; �Sheu, �Jinn-Kong; Tsai, J. M.

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