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Showing items 31-40 of 54  (6 Page(s) Totally)
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Institution Date Title Author
國立成功大學 2002 Piezoelectric effect on Al0.35-xInxGa0.65N/GaN heterostructures Lo, I-kai; Tsai, J. K.; Tu, Li-Wei; Hsieh, K. Y.; Tsai, M. H.; Liu, C. S.; Huang, J. H.; Elhamri, S.; Mitchel, W. C.; �Sheu, �Jinn-Kong
國立成功大學 2002 Low dark current GaN-based PIN ultraviolet photodetector with AlGaN/GaN superlattice p-layer structure Yeh, L. S.; Lee, M. L.; �Sheu, �Jinn-Kong; Chen, M. G.; Kao, C. J.; Chi, G. C.; Chang, S. J.; Su, Y. K.
國立成功大學 2002 Observation of dislocation etch pits in epitaxial lateral overgrowth GaN by wet etching Wen, T. C.; Lee, W. I.; �Sheu, �Jinn-Kong; Chi, G. C.
國立成功大學 2002 Polymer PBT/n-GaN metal-insulator-semiconductor structure Tu,� L.�W.; �Tsao,� P. H.; �Lee, �K. �H.; �Lo,� Ikai; �Bai, �S. �J.; �Wu,� C. �C.; �Hsieh,� K. �Y.; �Sheu, �Jinn-Kong
國立成功大學 2002 Ohmic contacts to p-type GaN mediated by polarization fields in thin InxGa1-xN cap-layers Gessmann T.; Li Y. L.; Waldron E. L.; Graff J. W.; Schubert E. F.; �Sheu, �Jinn-Kong
國立成功大學 2002 Novel Type of Ohmic Contacts to P-Doped GaN Using Polarization Fields in Thin InxGa 1-xN Capping Layers Gessmann T.; Li Y. L.; Waldron E. L.; Graff J. W.; Schubert E. F.; �Sheu, �Jinn-Kong
國立成功大學 2001-09 Characterization of the Properties of Mg-doped Al0.15Ga0.85N/GaN superlattices �Sheu, �Jinn-Kong; Kuo, C. H.; Chi, G. C.; Chen, C. C.; Jou, M. J.
國立成功大學 2001-05 Low-resistance Ni/Au ohmic contact to Mg-doped of Al0.15Ga0.85N/GaN superlattices Kuo, C. H.; �Sheu, �Jinn-Kong; Chi, G. C.; Huang, Y. L.; Yeh, T.W.
國立成功大學 2001 Enhanced output power in an InGaN/GaN multi-quantum well light-emitting diode with asymmetric wells �Sheu, �Jinn-Kong; Chi, C. G.; Jou, M. J.
國立成功大學 2001 Low-operation voltage of InGaN/GaN light-emitting diodes with Si-doped In0.23Ga0.77N/GaN short-period superlattice tunneling contact layer �Sheu, �Jinn-Kong; Tsai, J. M.; Shei, S. C.; Lai, W. C.; Wen, T. C.; Kuo, C. H.; Su, Y. K.; Chang, S. J.; Chi, G. C.

Showing items 31-40 of 54  (6 Page(s) Totally)
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