臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)

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	2019臺灣學術機構典藏研討會
	機構典藏系統RC7版本已發佈

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Institution	Date	Title	Author
國立成功大學	2009	Improved hydrogen gas generation rate of n-GaN photoelectrode with SiO2 protection layer on the Ohmic contacts from the electrolyte	Liu, Shu-Yen; �Sheu, �Jinn-Kong; Tseng, Chun-Kai; Ye, Jhao-Cheng; Chang, K. H.; Lee, M. L.; Lai, W. C.
國立成功大學	2009	Array of GaN-based transverse junction blue light emitting diodes with regrown n-type regimes	Guol,� Shi-Hao; �Huang,� H. W.; �Lin, �C. S.; �Sheu, �Jinn-Kong; �Tin,� C. J.; �Kuo,� C. H.; �Shi, �Jin-Wei
國立成功大學	2009	Asymmetric external field effects on photoluminescence efficiency in a blue (In,Ga)N quantum-well diode with an additional n -type electron reservoir layer	Kenzo Fujiwara; Hirofumi Katou; Takao Inoue; �Sheu, �Jinn-Kong
國立成功大學	2008	The CL emission observation of the InGaN/GaN MQWs V shaped pits with different superlattices underlayers	Lai, W. C.; Huang, Y. S.; Yen, Y. W.; �Sheu, �Jinn-Kong; Hsueh, T. H.; �Kuo,� C. H.; �Chang,� Shoou-Jinn
國立成功大學	2008	Non-lithographic nanopatterning of InGaN/GaN multiple quantum well nanopillars by focused ion beams	Wu, S. E.; Hsueh, T. H.; Liu, C. P.; �Sheu, �Jinn-Kong; Lai, W. C.; �Chang,� Shoou-Jinn
國立成功大學	2007	Effect of Thermal Annealing on Ga-doped ZnO Films Prepared by Magnetron Cosputtering	�Sheu, �Jinn-Kong; Shu, K. W.; Lee, M. L.; Tun, C. J.; Chi, G. C.
國立成功大學	2007	Non-alloyed Cr/Au Ohmic contacts to n-GaN	Lee, M. L.; �Sheu, �Jinn-Kong; Hu, C. C.
國立成功大學	2006	Effects of thermal annealing on transparent Al-doped ZnO films deposited on p-GaN	Tun,�C.�J.; �Sheu, �Jinn-Kong; Lee, M. L.; Hu, C. C.; �Hsieh,� C. �K.; Chi, G. C.
國立成功大學	2006	Applications of transparent Al-doped ZnO contact on GaN-based power LED	Tun,�C.�J.; �Sheu, �Jinn-Kong; �Pong, �B.� J.; �Lee,� M.� L.; �Lee, �M.� Y.; �Hsieh,� C. �K.; Hu, C. C.; Chi,�G.�C.
國立成功大學	2005	Comparison of Low Temperature GaN/SiO2/Si3N4 as gate insulators on AlGaN/GaN Heterostructure Field Effect Transistors	Kao, C. J.; Chen, M. C.; Tun, C. J.; Chi, G. C.; �Sheu, �Jinn-Kong; Lai, W. C.; �Lee,� M.� L.; Ren, F.; Pearton, S. J.
國立成功大學	2005	Rectifying characteristics of WSix-GaN Schottky barrier diodes improved by using a low-temperature-grown GaN cap layer	�Sheu, �Jinn-Kong; Lee, M. L.; Lai, W. C.; Tseng, H. C.; Chi, G. C.
國立成功大學	2005	Effects of thermal annealing on Si-implanted GaN films grown at low temperature by metal-organic vapor-phase	�Sheu, �Jinn-Kong; Chen, S. S.; Lee, M. L.; Lai, W. C.; Chang, W. H.; Chi, G. C.
國立成功大學	2004	Enhanced radiative efficiency in blue InGaN MQW LEDs with an electron reservoir layer	Takahashi, Y.; Satake, A.; Fujiwara, K.; �Sheu, �Jinn-Kong; Jahn, U.; Kostial, H.; Grahn, H. T.
國立成功大學	2004	Si diffusion in p GaN	Pan, C. J.; Chi, G. C.; Pong, B. J.; �Sheu, �Jinn-Kong; Chen, J. Y.
國立成功大學	2003-01-01	GaN diffractive microlenses fabricated with gray-level mask	Chen, Chii-Chang; Li, Ming-Hung; �Sheu, �Jinn-Kong; Chi, Gou-Chung; Cheng, Wei-Tai; Yeh, Jui-Hung; Chang, Jenq-Yang; Ito, Toshiaki
國立成功大學	2003	Improvement of Near-Ultraviolet InGaN/GaN Light Emitting Diodes with an AlGaN Current-blocking Layer Grown at Low Temperature	Tu, Ru-Chin; Pan, Shyi-Ming; Chuo, Chang-Cheng; Tun, Chun-Ju; �Sheu, �Jinn-Kong; Tsai, Ching-En; Wang, Te-Chung; Chi. Gou-Chung
國立成功大學	2003	High brightness InGaN/GaN LEDs with indium-tin-oxide as p-electrode	Chang, C. S.; �Sheu, �Jinn-Kong; Su, Y. K.; Lai, W. C.; Kuo, C. H.; Wang, C. K.; Lin, Y. C.; Hsu, Y. P.; Shei, S. C.; Lo, H. M.; J. C. Ke; J. K. Sheu
國立成功大學	2003	Characterizations of GaN Schottky barrier photodetectors with a highly-resistivity low-temperature GaN cap layer	Lee, M. L.; �Sheu, �Jinn-Kong; Lai, W. C.; Chang, S. J.; Su, Y. K.; Chen, M. G.; Kao, C. J.; Tsai, J. M.; G.C.Chi
國立成功大學	2003	Nitride-Based Near-Ultraviolet Multiple-Quantum Well Light-Emitting Diodes with AlGaN Barrier Layers	Kao, C. J.; Chang, S. J.; Su, Y. K.; Wu, L. W.; �Sheu, �Jinn-Kong; Wen, T. C.; Lai, W. C.; Tsai, J. M.; S.C. Chen
國立成功大學	2003	GaInN light-emitting diodes with omni-directional reflectors	Gessmann, T.; Li, Y. L.; Schubert, E. F.; Graff, J. W.; �Sheu, �Jinn-Kong
國立成功大學	2003	MOCVD growth of InGaN/GaN blue light emitting diodes on patterned sapphire substrates	Chang, S. J.; Su, Y. K.; Lin, Y. C.; Chuang, R. W.; Chang, C. S.; �Sheu, �Jinn-Kong; Wen, T. C.; Shei, S. C.; Kuo, C. W.; Fang, D. H.
國立成功大學	2003	Low-dark-current GaN Metal-Semiconductor-Metal photodetectors with low-temperature GaN cap layer	Chang, S. J.; Lee, M. L.; �Sheu, �Jinn-Kong; Lai, W. C.; Su, Y. K.; Chang, C. S.; Kao, C. J.; Chi, G. C.; Tsai, J. M.
國立成功大學	2003	Improvement of InGaN/GaN laser diodes by using a Si-doped In0.23Ga0.77N/GaN short-period superlattice tunneling contact layer	Tu, Ru-Chin; Tun, Chun-Ju; �Sheu, �Jinn-Kong; Kuo, Wei-Hong; Wang, Te-Chung; Tsai, Ching-En; Hsu, Jung-Tsung; Chi, Jim; Chi, Gou-Chung
國立成功大學	2003	Electrical efficiency analysis of GaN-based LEDs with interdigitated mesa geometry	Ting, Yi-Sheng; Chen, Chii-Chang; �Sheu, �Jinn-Kong; Chi, Gou-Chung; Hsu, Jung-Tsung
國立成功大學	2003	Nitride-based LEDs with Si-Doped In0.23Ga0.77N/GaN Short-Period Superlattice Tunneling Contact Layer	Kuo, C. H.; Chang, S. J.; Su, Y. K.; Chen, J. F.; �Sheu, �Jinn-Kong; Tsai, J. M.
國立成功大學	2003	Low-dark current, high-sensitivity metal-semiconductor-metal ultraviolet photodetectors based on GaN with low-temperature GaN intermediate layer	�Sheu, �Jinn-Kong; Kao, C. J.; Lee, M. L.; Lai, W. C.; Yeh, L. S.; Chi, G. C.; Chang, S. J.; Su, Y. K.; Tsai, J. M.
國立成功大學	2003	Nitride-based near UV MQW LEDs with AlGaN barrier layers	Chang, S. J.; Kuo, C. H.; Su, Y. K.; Wu, L. W.; �Sheu, �Jinn-Kong; Wen, T. C.; Lai, W. C.; Chen, J. F.; Tsai, J. M.
國立成功大學	2003	Experimental study of perpendicular transport in weakly coupled AlxGa1-xN/GaN superlattices	Waldron, E. L.; Li, Y. L.; Schubert, E. F.; Graff, J. W.; �Sheu, �Jinn-Kong
國立成功大學	2002-05-30	Dependence of optical gain on direction of optically pumped cavity on (0001)-plane for InGaN/GaN multiple quantum well structure	Chen, Chii-Chang; Hsieh, Kun-Long; �Sheu, �Jinn-Kong; Chi, Gou-Chung; Jou, Ming-Juinn; Lee, Chih-Hao; Lin, Ming-Zhe
國立成功大學	2002	GaN metal-semiconductor-metal ultraviolet sensors with various contact electrodes	Chen, C. H.; Chang, S. J.; Su, Y. K.; Chen, J. F.; Chi, G. C.; �Sheu, �Jinn-Kong; Lai, W. C.; Tsai, J. M.
國立成功大學	2002	Piezoelectric effect on Al0.35-xInxGa0.65N/GaN heterostructures	Lo, I-kai; Tsai, J. K.; Tu, Li-Wei; Hsieh, K. Y.; Tsai, M. H.; Liu, C. S.; Huang, J. H.; Elhamri, S.; Mitchel, W. C.; �Sheu, �Jinn-Kong
國立成功大學	2002	Low dark current GaN-based PIN ultraviolet photodetector with AlGaN/GaN superlattice p-layer structure	Yeh, L. S.; Lee, M. L.; �Sheu, �Jinn-Kong; Chen, M. G.; Kao, C. J.; Chi, G. C.; Chang, S. J.; Su, Y. K.
國立成功大學	2002	Observation of dislocation etch pits in epitaxial lateral overgrowth GaN by wet etching	Wen, T. C.; Lee, W. I.; �Sheu, �Jinn-Kong; Chi, G. C.
國立成功大學	2002	Polymer PBT/n-GaN metal-insulator-semiconductor structure	Tu,� L.�W.; �Tsao,� P. H.; �Lee, �K. �H.; �Lo,� Ikai; �Bai, �S. �J.; �Wu,� C. �C.; �Hsieh,� K. �Y.; �Sheu, �Jinn-Kong
國立成功大學	2002	Ohmic contacts to p-type GaN mediated by polarization fields in thin InxGa1-xN cap-layers	Gessmann T.; Li Y. L.; Waldron E. L.; Graff J. W.; Schubert E. F.; �Sheu, �Jinn-Kong
國立成功大學	2002	Novel Type of Ohmic Contacts to P-Doped GaN Using Polarization Fields in Thin InxGa 1-xN Capping Layers	Gessmann T.; Li Y. L.; Waldron E. L.; Graff J. W.; Schubert E. F.; �Sheu, �Jinn-Kong
國立成功大學	2001-09	Characterization of the Properties of Mg-doped Al0.15Ga0.85N/GaN superlattices	�Sheu, �Jinn-Kong; Kuo, C. H.; Chi, G. C.; Chen, C. C.; Jou, M. J.
國立成功大學	2001-05	Low-resistance Ni/Au ohmic contact to Mg-doped of Al0.15Ga0.85N/GaN superlattices	Kuo, C. H.; �Sheu, �Jinn-Kong; Chi, G. C.; Huang, Y. L.; Yeh, T.W.
國立成功大學	2001	Enhanced output power in an InGaN/GaN multi-quantum well light-emitting diode with asymmetric wells	�Sheu, �Jinn-Kong; Chi, C. G.; Jou, M. J.
國立成功大學	2001	Low-operation voltage of InGaN/GaN light-emitting diodes with Si-doped In0.23Ga0.77N/GaN short-period superlattice tunneling contact layer	�Sheu, �Jinn-Kong; Tsai, J. M.; Shei, S. C.; Lai, W. C.; Wen, T. C.; Kuo, C. H.; Su, Y. K.; Chang, S. J.; Chi, G. C.
國立成功大學	2001	Crystal orientation dependence of optical gain in InGaN/GaN multiple quantum well structure	Chen, Chii-Chang; Hsieh, Kun-Long; �Sheu, �Jinn-Kong; Chi, Gou-Chung; Jou, Ming-Juinn; Lee, Chih-Hao; Lin, Ming-Zhe
國立成功大學	2001	Low-operation voltage of InGaN/GaN light-emitting diodes by using a Mg-doped Al0.15Ga0.85N/GaN superlattice	�Sheu, �Jinn-Kong; Chi, G. C.; Jou, M. J.
國立成功大學	2001	Characterization of p-type InxGa1-xN grown by metalorganic chemical vapor deposition	Wen, T. C.; Lee, W. I.; �Sheu, �Jinn-Kong; Chi, G. C.
國立成功大學	2000	High-dielectric-constantTa2O5/n-GaN metal-oxide-semiconductor structure	Tu,� L.� W.; �Kuo,� W.� C.; �Lee,� K.� H.; �Tsao,� P.� H.; �Lai,� C.� M.; �Chu,� A.� K.; �Sheu, �Jinn-Kong
國立成功大學	2000	Ohmic contacts to GaN with rapid thermal annealing	Chi,� L.�W.; �Lam,� K. �T.; �Kao,� Y. �K.; �Juang,� Fuh-Shyang; �Tasi,� Y. �S.; �Su,� Yan-Kuin; Chang,� Shoou-Jinn; �Chen, �C. �C.; �Sheu, �Jinn-Kong
國立成功大學	2000	Ohmic contacts and reactive ion beam etching for p-type GaN	Chung, Fuh-Shyang; Chang,� Shoou-Jinn; Su, Yan-Kuin; Chen, C. J.; �Sheu, �Jinn-Kong
國立成功大學	2000	Growth and characterization of InGaN/GaN multi-quantum well light-emitting diodes	�Sheu, �Jinn-Kong; Su, Yan-Kuin; Chi, G. C.; Jou, M. J.
國立成功大學	2000	Luminescence of the InGaN/GaN blue light-emitting diodes	�Sheu, �Jinn-Kong; Yeh, T. W.; Chi, G. C.; Jou, M. J.
國立成功大學	2000	The formation of Ti / Al Ohmic contact on etched n-GaN surfaces	�Sheu, �Jinn-Kong; Su, Yan-Kuin; Chi, G. C.; Jou, M. J.; Chang, C. M.; Liu, C. C.; Hung, W. C.; Bow, J. S.; Yu, Y. C.
國立成功大學	1999	High-transparency Ni/Au ohmic contact to p-type GaN	�Sheu, �Jinn-Kong; Su, Yan-Kuin; Chi, G. C.; Jou, M. J.; Chang, C. M.; Liu, C. C.; Hung, W. C.

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