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機構	日期	題名	作者
國立成功大學	2003	Improvement of Near-Ultraviolet InGaN/GaN Light Emitting Diodes with an AlGaN Current-blocking Layer Grown at Low Temperature	Tu, Ru-Chin; Pan, Shyi-Ming; Chuo, Chang-Cheng; Tun, Chun-Ju; �Sheu, �Jinn-Kong; Tsai, Ching-En; Wang, Te-Chung; Chi. Gou-Chung
國立成功大學	2003	High brightness InGaN/GaN LEDs with indium-tin-oxide as p-electrode	Chang, C. S.; �Sheu, �Jinn-Kong; Su, Y. K.; Lai, W. C.; Kuo, C. H.; Wang, C. K.; Lin, Y. C.; Hsu, Y. P.; Shei, S. C.; Lo, H. M.; J. C. Ke; J. K. Sheu
國立成功大學	2003	Characterizations of GaN Schottky barrier photodetectors with a highly-resistivity low-temperature GaN cap layer	Lee, M. L.; �Sheu, �Jinn-Kong; Lai, W. C.; Chang, S. J.; Su, Y. K.; Chen, M. G.; Kao, C. J.; Tsai, J. M.; G.C.Chi
國立成功大學	2003	Nitride-Based Near-Ultraviolet Multiple-Quantum Well Light-Emitting Diodes with AlGaN Barrier Layers	Kao, C. J.; Chang, S. J.; Su, Y. K.; Wu, L. W.; �Sheu, �Jinn-Kong; Wen, T. C.; Lai, W. C.; Tsai, J. M.; S.C. Chen
國立成功大學	2003	GaInN light-emitting diodes with omni-directional reflectors	Gessmann, T.; Li, Y. L.; Schubert, E. F.; Graff, J. W.; �Sheu, �Jinn-Kong
國立成功大學	2003	MOCVD growth of InGaN/GaN blue light emitting diodes on patterned sapphire substrates	Chang, S. J.; Su, Y. K.; Lin, Y. C.; Chuang, R. W.; Chang, C. S.; �Sheu, �Jinn-Kong; Wen, T. C.; Shei, S. C.; Kuo, C. W.; Fang, D. H.
國立成功大學	2003	Low-dark-current GaN Metal-Semiconductor-Metal photodetectors with low-temperature GaN cap layer	Chang, S. J.; Lee, M. L.; �Sheu, �Jinn-Kong; Lai, W. C.; Su, Y. K.; Chang, C. S.; Kao, C. J.; Chi, G. C.; Tsai, J. M.
國立成功大學	2003	Improvement of InGaN/GaN laser diodes by using a Si-doped In0.23Ga0.77N/GaN short-period superlattice tunneling contact layer	Tu, Ru-Chin; Tun, Chun-Ju; �Sheu, �Jinn-Kong; Kuo, Wei-Hong; Wang, Te-Chung; Tsai, Ching-En; Hsu, Jung-Tsung; Chi, Jim; Chi, Gou-Chung
國立成功大學	2003	Electrical efficiency analysis of GaN-based LEDs with interdigitated mesa geometry	Ting, Yi-Sheng; Chen, Chii-Chang; �Sheu, �Jinn-Kong; Chi, Gou-Chung; Hsu, Jung-Tsung
國立成功大學	2003	Nitride-based LEDs with Si-Doped In0.23Ga0.77N/GaN Short-Period Superlattice Tunneling Contact Layer	Kuo, C. H.; Chang, S. J.; Su, Y. K.; Chen, J. F.; �Sheu, �Jinn-Kong; Tsai, J. M.
國立成功大學	2003	Low-dark current, high-sensitivity metal-semiconductor-metal ultraviolet photodetectors based on GaN with low-temperature GaN intermediate layer	�Sheu, �Jinn-Kong; Kao, C. J.; Lee, M. L.; Lai, W. C.; Yeh, L. S.; Chi, G. C.; Chang, S. J.; Su, Y. K.; Tsai, J. M.
國立成功大學	2003	Nitride-based near UV MQW LEDs with AlGaN barrier layers	Chang, S. J.; Kuo, C. H.; Su, Y. K.; Wu, L. W.; �Sheu, �Jinn-Kong; Wen, T. C.; Lai, W. C.; Chen, J. F.; Tsai, J. M.
國立成功大學	2003	Experimental study of perpendicular transport in weakly coupled AlxGa1-xN/GaN superlattices	Waldron, E. L.; Li, Y. L.; Schubert, E. F.; Graff, J. W.; �Sheu, �Jinn-Kong
國立成功大學	2002-05-30	Dependence of optical gain on direction of optically pumped cavity on (0001)-plane for InGaN/GaN multiple quantum well structure	Chen, Chii-Chang; Hsieh, Kun-Long; �Sheu, �Jinn-Kong; Chi, Gou-Chung; Jou, Ming-Juinn; Lee, Chih-Hao; Lin, Ming-Zhe
國立成功大學	2002	GaN metal-semiconductor-metal ultraviolet sensors with various contact electrodes	Chen, C. H.; Chang, S. J.; Su, Y. K.; Chen, J. F.; Chi, G. C.; �Sheu, �Jinn-Kong; Lai, W. C.; Tsai, J. M.
國立成功大學	2002	Piezoelectric effect on Al0.35-xInxGa0.65N/GaN heterostructures	Lo, I-kai; Tsai, J. K.; Tu, Li-Wei; Hsieh, K. Y.; Tsai, M. H.; Liu, C. S.; Huang, J. H.; Elhamri, S.; Mitchel, W. C.; �Sheu, �Jinn-Kong
國立成功大學	2002	Low dark current GaN-based PIN ultraviolet photodetector with AlGaN/GaN superlattice p-layer structure	Yeh, L. S.; Lee, M. L.; �Sheu, �Jinn-Kong; Chen, M. G.; Kao, C. J.; Chi, G. C.; Chang, S. J.; Su, Y. K.
國立成功大學	2002	Observation of dislocation etch pits in epitaxial lateral overgrowth GaN by wet etching	Wen, T. C.; Lee, W. I.; �Sheu, �Jinn-Kong; Chi, G. C.
國立成功大學	2002	Polymer PBT/n-GaN metal-insulator-semiconductor structure	Tu,� L.�W.; �Tsao,� P. H.; �Lee, �K. �H.; �Lo,� Ikai; �Bai, �S. �J.; �Wu,� C. �C.; �Hsieh,� K. �Y.; �Sheu, �Jinn-Kong
國立成功大學	2002	Ohmic contacts to p-type GaN mediated by polarization fields in thin InxGa1-xN cap-layers	Gessmann T.; Li Y. L.; Waldron E. L.; Graff J. W.; Schubert E. F.; �Sheu, �Jinn-Kong
國立成功大學	2002	Novel Type of Ohmic Contacts to P-Doped GaN Using Polarization Fields in Thin InxGa 1-xN Capping Layers	Gessmann T.; Li Y. L.; Waldron E. L.; Graff J. W.; Schubert E. F.; �Sheu, �Jinn-Kong
國立成功大學	2001-09	Characterization of the Properties of Mg-doped Al0.15Ga0.85N/GaN superlattices	�Sheu, �Jinn-Kong; Kuo, C. H.; Chi, G. C.; Chen, C. C.; Jou, M. J.
國立成功大學	2001-05	Low-resistance Ni/Au ohmic contact to Mg-doped of Al0.15Ga0.85N/GaN superlattices	Kuo, C. H.; �Sheu, �Jinn-Kong; Chi, G. C.; Huang, Y. L.; Yeh, T.W.
國立成功大學	2001	Enhanced output power in an InGaN/GaN multi-quantum well light-emitting diode with asymmetric wells	�Sheu, �Jinn-Kong; Chi, C. G.; Jou, M. J.
國立成功大學	2001	Low-operation voltage of InGaN/GaN light-emitting diodes with Si-doped In0.23Ga0.77N/GaN short-period superlattice tunneling contact layer	�Sheu, �Jinn-Kong; Tsai, J. M.; Shei, S. C.; Lai, W. C.; Wen, T. C.; Kuo, C. H.; Su, Y. K.; Chang, S. J.; Chi, G. C.

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