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Taiwan Academic Institutional Repository >
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"�sheu �jinn kong"
Showing items 26-35 of 54 (6 Page(s) Totally)
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| 國立成功大學 |
2003 |
Low-dark current, high-sensitivity metal-semiconductor-metal ultraviolet photodetectors based on GaN with low-temperature GaN intermediate layer
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�Sheu, �Jinn-Kong; Kao, C. J.; Lee, M. L.; Lai, W. C.; Yeh, L. S.; Chi, G. C.; Chang, S. J.; Su, Y. K.; Tsai, J. M. |
| 國立成功大學 |
2003 |
Nitride-based near UV MQW LEDs with AlGaN barrier layers
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Chang, S. J.; Kuo, C. H.; Su, Y. K.; Wu, L. W.; �Sheu, �Jinn-Kong; Wen, T. C.; Lai, W. C.; Chen, J. F.; Tsai, J. M. |
| 國立成功大學 |
2003 |
Experimental study of perpendicular transport in weakly coupled AlxGa1-xN/GaN superlattices
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Waldron, E. L.; Li, Y. L.; Schubert, E. F.; Graff, J. W.; �Sheu, �Jinn-Kong |
| 國立成功大學 |
2002-05-30 |
Dependence of optical gain on direction of optically pumped cavity on (0001)-plane for InGaN/GaN multiple quantum well structure
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Chen, Chii-Chang; Hsieh, Kun-Long; �Sheu, �Jinn-Kong; Chi, Gou-Chung; Jou, Ming-Juinn; Lee, Chih-Hao; Lin, Ming-Zhe |
| 國立成功大學 |
2002 |
GaN metal-semiconductor-metal ultraviolet sensors with various contact electrodes
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Chen, C. H.; Chang, S. J.; Su, Y. K.; Chen, J. F.; Chi, G. C.; �Sheu, �Jinn-Kong; Lai, W. C.; Tsai, J. M. |
| 國立成功大學 |
2002 |
Piezoelectric effect on Al0.35-xInxGa0.65N/GaN heterostructures
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Lo, I-kai; Tsai, J. K.; Tu, Li-Wei; Hsieh, K. Y.; Tsai, M. H.; Liu, C. S.; Huang, J. H.; Elhamri, S.; Mitchel, W. C.; �Sheu, �Jinn-Kong |
| 國立成功大學 |
2002 |
Low dark current GaN-based PIN ultraviolet photodetector with AlGaN/GaN superlattice p-layer structure
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Yeh, L. S.; Lee, M. L.; �Sheu, �Jinn-Kong; Chen, M. G.; Kao, C. J.; Chi, G. C.; Chang, S. J.; Su, Y. K. |
| 國立成功大學 |
2002 |
Observation of dislocation etch pits in epitaxial lateral overgrowth GaN by wet etching
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Wen, T. C.; Lee, W. I.; �Sheu, �Jinn-Kong; Chi, G. C. |
| 國立成功大學 |
2002 |
Polymer PBT/n-GaN metal-insulator-semiconductor structure
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Tu,� L.�W.; �Tsao,� P. H.; �Lee, �K. �H.; �Lo,� Ikai; �Bai, �S. �J.; �Wu,� C. �C.; �Hsieh,� K. �Y.; �Sheu, �Jinn-Kong |
| 國立成功大學 |
2002 |
Ohmic contacts to p-type GaN mediated by polarization fields in thin InxGa1-xN cap-layers
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Gessmann T.; Li Y. L.; Waldron E. L.; Graff J. W.; Schubert E. F.; �Sheu, �Jinn-Kong |
Showing items 26-35 of 54 (6 Page(s) Totally)
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