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Institution Date Title Author
國立交通大學 2019-04-03T06:41:58Z One bipolar transistor selector - One resistive random access memory device for cross bar memory array Aluguri, R.; Kumar, D.; Simanjuntak, F. M.; Tseng, T. Y.
國立交通大學 2019-04-02T05:59:08Z Characteristics of flexible and transparent Eu2O3 resistive switching memory at high bending condition Aluguri, R.; Sailesh, R.; Kumar, D.; Tseng, Tseung-Yuen
國立交通大學 2018-08-21T05:54:29Z Metal oxide resistive switching memory: Materials, properties and switching mechanisms Kumar, D.; Aluguri, R.; Chand, U.; Tseng, T. Y.

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