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Institution Date Title Author
國立交通大學 2019-04-03T06:39:55Z Overview of Selector Devices for 3-D Stackable Cross Point RRAM Arrays Aluguri, Rakesh; Tseng, Tseung-Yuen
國立交通大學 2019-04-02T05:58:58Z One Bipolar Selector-One Resistor for Flexible Crossbar Memory Applications Kumar, Dayanand; Aluguri, Rakesh; Chand, Umesh; Tseng, Tseung-Yuen
國立交通大學 2019-04-02T05:58:50Z The impact of TiW barrier layer thickness dependent transition from electro-chemical metallization memory to valence change memory in ZrO2-based resistive switching random access memory devices Chandrasekaran, Sridhar; Simanjuntak, Firman Mangasa; Aluguri, Rakesh; Tseng, Tseung-Yuen
國立交通大學 2018-08-21T05:57:08Z High Performance Bipolar Resistive Switching Characteristics in SiO2/ZrO2/SiO2 Tri-layer Based CBRAM Device Kumar, Dayanand; Aluguri, Rakesh; Chand, Umesh; Tseng, Tseung-Yuen
國立交通大學 2018-08-21T05:54:05Z Enhancement of resistive switching properties in nitride based CBRAM device by inserting an Al2O3 thin layer Kumar, Dayanand; Aluguri, Rakesh; Chand, Umesh; Tseng, Tseung-Yuen
國立交通大學 2018-08-21T05:53:36Z Role of Al2O3 thin layer on improving the resistive switching properties of Ta5Si3-based conductive bridge random accesses memory device Kumar, Dayanand; Aluguri, Rakesh; Chand, Umesh; Tseng, Tseung-Yuen
國立交通大學 2018-08-21T05:53:18Z Conductive bridge random access memory characteristics of SiCN based transparent device due to indium diffusion Kumar, Dayanand; Aluguri, Rakesh; Chand, Umesh; Tseng, Tseung-Yuen
國立交通大學 2014-12-08T15:29:44Z Enhanced charge storage characteristics of nickel nanocrystals embedded flash memory structures Ray, Sounak K.; Panda, Debashis; Aluguri, Rakesh

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