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Institution Date Title Author
國立交通大學 2018-08-21T05:52:54Z Impact of material properties and device architecture on the device performance for a gate all around nanowire tunneling FET Singh, S. K.; Gupta, A.; Yu, H. W.; Nagarajan, V.; Anandan, D.; Kakkerla, R. K.; Chang, E. Y.
國立成功大學 2018 Growth and crystal structure investigation of InAs/GaSb heterostructure nanowires on Si Substrate Kakkerla, R.K.;Hsiao, C.-J.;Anandan, D.;Singh, Singh S.K.;Chang, S.-P.;Pande, K.P.;Chang, E.Y.

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