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國立交通大學 |
2018-08-21T05:52:54Z |
Impact of material properties and device architecture on the device performance for a gate all around nanowire tunneling FET
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Singh, S. K.; Gupta, A.; Yu, H. W.; Nagarajan, V.; Anandan, D.; Kakkerla, R. K.; Chang, E. Y. |
國立成功大學 |
2018 |
Growth and crystal structure investigation of InAs/GaSb heterostructure nanowires on Si Substrate
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Kakkerla, R.K.;Hsiao, C.-J.;Anandan, D.;Singh, Singh S.K.;Chang, S.-P.;Pande, K.P.;Chang, E.Y. |
Showing items 1-2 of 2 (1 Page(s) Totally) 1 View [10|25|50] records per page
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