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"anandan deepak"

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Showing items 1-15 of 15  (1 Page(s) Totally)
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Institution Date Title Author
元智大學 Sep-19 Crystal phase control in self-catalyzed InSb nanowires using basic growth parameter V/III ratio 李清庭; Anandan, Deepak; Nagarajan, Venkatesan; Kakkerla, Ramesh Kumar; Yu, Hung Wei; Ko, Hua Lun; Singh, Sankalp Kumar; Chang, Edward Yi
元智大學 Nov-21 Selective area epitaxy of high quality Wurtzite-InAs heterostructure on InGaAs nanopillars at indium-rich region using MOCVD 李清庭; Anandan, Deepak; Yu, Hung Wei; Chang, Edward Yi; Singh, Sankalp Kumar; Nagarajan, Venkatesan; Dee, Chang Fu; Ueda, Daisuke
元智大學 Jan-19 Growth of foreign-catalyst-free vertical InAs/InSb heterostructure nanowires on Si (111) substrate by MOCVD 李清庭; Anandan, Deepak; Kakkerla, Ramesh Kumar; Yu, Hung Wei; Ko, Hua Lun; Nagarajan, Venkatesan; Singh, Sankalp Kumar; Chang, Edward Yi
元智大學 Jan-19 Crystal structure control of Au-free InAs and InAs/GaSb heterostucture nanowires grown on Si (111) by metal-organic chemical vapor deposition 李清庭; Kakkerla, Ramesh Kumar; Anandan, Deepak; Singh, Sankalp Kumar; Yu, Hung Wei; Dee, Chang-Fu; Majlis, Burhanuddin Yeop; Chang, Edward Yi
國立交通大學 2020-10-05T01:59:50Z Study of Charge Trapping Effects on AlGaN/GaN HEMTs Under UV Illumination With Pulsed I-V Measurement Nagarajan, Venkatesan; Chen, Kun-Ming; Chen, Bo-Yuan; Huang, Guo-Wei; Chuang, Chia-Wei; Lin, Chuang-Ju; Anandan, Deepak; Wu, Chai-Hsun; Han, Ping-Cheng; Singh, Sankalp Kumar; Tien-Tung Luong; Chang, Edward Yi
國立交通大學 2020-07-01T05:22:04Z Low-Frequency Noise Characterization of AlGaN & x002F;GaN HEMTs and MIS-HEMTs Under UV Illumination Nagarajan, Venkatesan; Chen, Kun-Ming; Lin, Hsin-Yi; Hu, Hsin-Hui; Huang, Guo-Wei; Lin, Chuang-Ju; Chen, Bo-Yuan; Anandan, Deepak; Singh, Sankalp Kumar; Wu, Chai-Hsun; Chang, Edward Yi
國立交通大學 2019-08-02T02:18:33Z A simple extraction method for parasitic series resistances in GaN HEMTs considering non-quasi-static effects Nagarajan, Venkatesan; Chen, Kun-Ming; Wang, Huan-Chung; Singh, Sankalp Kumar; Anandan, Deepak; Lin, Yueh-Chin; Chang, Edward Yi
國立交通大學 2019-08-02T02:15:30Z Optimization of InAs/GaSb core-shell nanowire structure for improved TFET performance Singh, Sankalp Kumar; Kakkerla, Ramesh Kumar; Joseph, H. Bijo; Gupta, Ankur; Anandan, Deepak; Nagarajan, Venkatesan; Yu, Hung Wei; Thiruvadigal, D. John; Chang, Edward Yi
國立交通大學 2019-08-02T02:15:28Z Crystal phase control in self-catalyzed InSb nanowires using basic growth parameter V/III ratio Anandan, Deepak; Nagarajan, Venkatesan; Kakkerla, Ramesh Kumar; Yu, Hung Wei; Ko, Hua Lun; Singh, Sankalp Kumar; Lee, Ching Ting; Chang, Edward Yi
國立交通大學 2019-04-02T06:04:29Z Growth and Crystal Structure Investigation of Self-catalyst InAs/GaSb Heterostructure Nanowires on Si substrate Kakkerla, Ramesh Kumar; Hsiao, Chih-Jen; Anandan, Deepak; Singh, Sankalp Kumar; Chang, Edward Yi
國立交通大學 2019-04-02T05:59:07Z Crystal structure control of Au-free InAs and InAs/GaSb heterostucture nanowires grown on Si (111) by metal-organic chemical vapor deposition Kakkerla, Ramesh Kumar; Anandan, Deepak; Singh, Sankalp Kumar; Yu, Hung Wei; Lee, Ching-Ting; Dee, Chang-Fu; Majlis, Burhanuddin Yeop; Chang, Edward Yi
國立交通大學 2019-04-02T05:58:47Z Growth of foreign-catalyst-free vertical InAs/InSb heterostructure nanowires on Si (111) substrate by MOCVD Anandan, Deepak; Kakkerla, Ramesh Kumar; Yu, Hung Wei; Ko, Hua Lun; Nagarajan, Venkatesan; Singh, Sankalp Kumar; Lee, Ching Ting; Chang, Edward Yi
國立交通大學 2019-04-02T05:58:41Z Growth and Crystal Structure Investigation of InAs/GaSb Heterostructure Nanowires on Si Substrate Kakkerla, Ramesh Kumar; Hsiao, Chih-Jen; Anandan, Deepak; Singh, Sankalp Kumar; Chang, Sheng-Po; Pande, Krishna P.; Chang, Edward Yi
國立交通大學 2018-08-21T05:53:31Z Temperature effect on the growth of Au-free InAs and InAs/GaSb heterostructure nanowires on Si substrate by MOCVD Kakkerla, Ramesh Kumar; Anandan, Deepak; Hsiao, Chih-Jen; Yu, Hung Wei; Singh, Sankalp Kumar; Chang, Edward Yi
國立交通大學 2018-08-21T05:53:10Z Effect of Two-Step Metal Organic Chemical Vapor Deposition Growth on Quality, Diameter and Density of InAs Nanowires on Si (111) Substrate Yu, Hung Wei; Anandan, Deepak; Hsu, Ching Yi; Hung, Yu Chih; Su, Chun Jung; Wu, Chien Ting; Kakkerla, Ramesh Kumar; Minh Thien Huu Ha; Huynh, Sa Hoang; Tu, Yung Yi; Chang, Edward Yi

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