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Institution Date Title Author
臺大學術典藏 2018-09-10T07:01:22Z Demonstration of GaN MIS diodes by using AlN and Ga 2 O 3 (Gd 2 O 3) as dielectrics Ren, F; Abernathy, CR; MacKenzie, JD; Gila, BP; Pearton, SJ; Hong, M; Marcus, MA; Schurman, MJ; Baca, AG; Shul, RJ; MINGHWEI HONG
臺大學術典藏 2018-09-10T06:28:18Z Dielectrics for GaN based MIS-diodes Ren, F; Abernathy, CR; MacKenzie, JD; Gila, BP; Pearton, SJ; Hong, M; Macos, M; Schurman, MJ; Baca, AG; Shul, RJ; MINGHWEI HONG
臺大學術典藏 2018-09-10T03:28:34Z GaN electronics for high power, high temperature applications Pearton, SJ; Ren, F; Zhang, AP; Dang, G; Cao, XA; Cho, H; Abernathy, CR; Han, J; Baca, AG; Monier, C; others; MINGHWEI HONG

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