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Institution Date Title Author
國立交通大學 2014-12-08T15:39:11Z Effect of surface NH3 anneal on the physical and electrical properties of HfO2 films on Ge substrate Wu, N; Zhang, QC; Zhu, CX; Yeo, CC; Whang, SJ; Chan, DSH; Li, MF; Cho, BJ; Chin, A; Kwong, DL; Du, AY; Tung, CH; Balasubramanian, N
國立交通大學 2014-12-08T15:38:36Z A TaN-HfO2-Ge pMOSFET with novel SiH4 surface passivation Wu, N; Zhang, QC; Zhu, CX; Chan, DSH; Du, AY; Balasubramanian, N; Li, MF; Chin, A; Sin, JKO; Kwong, DL
國立交通大學 2014-12-08T15:37:19Z Alternative surface passivation on germanium for metal-oxide-semiconductor applications with high-k gate dielectric Wu, N; Zhang, QC; Zhu, CX; Chan, DSH; Li, MF; Balasubramanian, N; Chin, A; Kwong, DL
國立成功大學 2005-03-30 Hierarchical Petri nets for modeling metabolic phenotype in prokaryotes Balasubramanian, N; Yeh, Ming-Li; Chang, Chuei-Tin; Chen, Shu-Jen
國立成功大學 2002-09-18 Petri-net models for risk analysis of hazardous liquid loading operations Balasubramanian, N.; Chang, Chuei-Tin; Wang, Yi-Feng

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