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"banerjee writam"的相关文件
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| 國立交通大學 |
2017-04-21T06:48:32Z |
Demonstration of 3D Vertical RRAM with Ultra Low-leakage, High-selectivity and Self-compliance Memory Cells
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Luo, Qing; Xu, Xiaoxin; Liu, Hongtao; Lv, Hangbing; Gong, Tiancheng; Long, Shibing; Liu, Qi; Sun, Haitao; Banerjee, Writam; Li, Ling; Gao, Jianfeng; Lu, Nianduan; Chung, Steve S.; Li, Jing; Liu, Ming |
| 國立臺灣大學 |
2012 |
Formation polarity dependent improved resistive switching memory characteristics using nanoscale (1.3 nm) core-shell IrOx nano-dots
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Banerjee, Writam; Maikap, Siddheswar; Lai, Chao-Sung; Chen, Yi-Yan; Tien, Ta-Chang; Lee, Heng-Yuan; Chen, Wei-Su; Chen, Frederick T.; Kao, Ming-Jer; Tsai, Ming-Jinn; Yang, Jer-Ren |
| 臺大學術典藏 |
2012 |
Formation polarity dependent improved resistive switching memory characteristics using nanoscale (1.3 nm) core-shell IrOx nano-dots
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Yang, Jer-Ren et al.; Banerjee, Writam; Banerjee, Writam; Maikap, Siddheswar; Lai, Chao-Sung; Chen, Yi-Yan; Tien, Ta-Chang; Lee, Heng-Yuan; Chen, Wei-Su; Chen, Frederick T.; Kao, Ming-Jer; Tsai, Ming-Jinn; Yang, Jer-Ren |
| 國立臺灣大學 |
2011 |
Particle Size and Morphology of Iridium Oxide Nanocrystals in Non-Volatile Memory Device
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Li, Wei-Chih; Banerjee, Writam; Maikap, Siddheswar; Yang, Jer-Ren |
| 臺大學術典藏 |
2011 |
Particle Size and Morphology of Iridium Oxide Nanocrystals in Non-Volatile Memory Device
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Yang, Jer-Ren; Maikap, Siddheswar; Banerjee, Writam; Li, Wei-Chih; Li, Wei-Chih; Banerjee, Writam; Maikap, Siddheswar; Yang, Jer-Ren |
显示项目 1-5 / 5 (共1页)
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