| 國立中山大學 |
1993-06 |
High-Speed 1.3 mm InGaAsP Fabry-Perot Lasers for Digital and Analog Applications
|
W.H. Cheng; A. Mar; J.E. Bowers; R.T. Huang; C.B. Su |
| 國立中山大學 |
1992-07 |
1.3 mm InGaAsP Fabry-Perot Lasers with Reduced Pulse Jitter and Power Penalty
|
W.H. Cheng; J.M. Dugan;J.C. Miller; D. Renner;T.C. McDermott; C.B. Su |
| 國立中山大學 |
1991-06 |
High-Speed and Low-Relative-Intensity Noise 1.3 mm InGaAsP Semi-Insulating Buried Crescent Lasers
|
W.H. Cheng; K.D. Buehring; A. Appelbaum;D. Renner; S. Shin; C.B. Su; A. Mar; J.E. Bowers |
| 國立中山大學 |
1987 |
Low-Threshold and Wide-Bandwidth 1.3 mm InGaAsP Buried Crescent Injection lasers with Semi-Insulating Current Confinement Layers
|
W.H. Cheng;C.B. Su;K.D. Buehring;J.W. Ure;D. Perrachione;D. Renner;K.L. Hess;S.W. Zehr |
| 國立中山大學 |
1987 |
High-Speed and High-Power 1.3 mm InGaAsP Buried Crescent Injection lasers with Semi-Insulating Current Blocking Layers
|
W.H. Cheng;C.B. Su;K.D. Buehring;S.Y. Huang;J. Pooladdej;D. Wolf;D. Perrachione;D. Renner;K.L. Hess;S.W. Zehr |
| 國立中山大學 |
1987 |
Effect of Active Layer Thickness on Differential Quantum Efficiency of 1.3 and 1.55mm InGaAsP Injection lasers
|
W.H. Cheng;C.B. Su;D. Renner |
| 國立中山大學 |
1986 |
Low-Threshold and Wide-Bandwidth 1.3 mm InGaAsP Buried Crescent Injection lasers with Semi-Insulating Current Confinement Layers
|
W.H. Cheng;C.B. Su;K.D. Buehring;C.P. Chien;J.W. Ure;D. Perrachione;D. Renner;K.L. Hess;S.W. Zehr |
