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Showing items 1-7 of 7  (1 Page(s) Totally)
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Institution Date Title Author
國立中山大學 1993-06 High-Speed 1.3 mm InGaAsP Fabry-Perot Lasers for Digital and Analog Applications W.H. Cheng; A. Mar; J.E. Bowers; R.T. Huang; C.B. Su
國立中山大學 1992-07 1.3 mm InGaAsP Fabry-Perot Lasers with Reduced Pulse Jitter and Power Penalty W.H. Cheng; J.M. Dugan;J.C. Miller; D. Renner;T.C. McDermott; C.B. Su
國立中山大學 1991-06 High-Speed and Low-Relative-Intensity Noise 1.3 mm InGaAsP Semi-Insulating Buried Crescent Lasers W.H. Cheng; K.D. Buehring; A. Appelbaum;D. Renner; S. Shin; C.B. Su; A. Mar; J.E. Bowers
國立中山大學 1987 Low-Threshold and Wide-Bandwidth 1.3 mm InGaAsP Buried Crescent Injection lasers with Semi-Insulating Current Confinement Layers W.H. Cheng;C.B. Su;K.D. Buehring;J.W. Ure;D. Perrachione;D. Renner;K.L. Hess;S.W. Zehr
國立中山大學 1987 High-Speed and High-Power 1.3 mm InGaAsP Buried Crescent Injection lasers with Semi-Insulating Current Blocking Layers W.H. Cheng;C.B. Su;K.D. Buehring;S.Y. Huang;J. Pooladdej;D. Wolf;D. Perrachione;D. Renner;K.L. Hess;S.W. Zehr
國立中山大學 1987 Effect of Active Layer Thickness on Differential Quantum Efficiency of 1.3 and 1.55mm InGaAsP Injection lasers W.H. Cheng;C.B. Su;D. Renner
國立中山大學 1986 Low-Threshold and Wide-Bandwidth 1.3 mm InGaAsP Buried Crescent Injection lasers with Semi-Insulating Current Confinement Layers W.H. Cheng;C.B. Su;K.D. Buehring;C.P. Chien;J.W. Ure;D. Perrachione;D. Renner;K.L. Hess;S.W. Zehr

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