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臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)
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Institution Date Title Author
元智大學 Feb-23 Effects of AlN/GaN superlattice buffer layer on performances of AlGaN/GaN HEMT grown on silicon for sub-6 GHz applications 李清庭; L. T. Hieu; H. T. Hsu; C. H. Chiang; D. Panda; C. H. Lin; E. Y. Chang
元智大學 Feb-23 Effects of AlN/GaN superlattice buffer layer on performances of AlGaN/GaN HEMT grown on silicon for sub-6 GHz applications 李清庭; L. T. Hieu; H. T. Hsu; C. H. Chiang; D. Panda; C. H. Lin; E. Y. Chang
元智大學 Feb-23 Improved Off-State Leakage Current and Cutoff Frequency for AlGaN/GaN HEMT by Using Silicon-on-Insulator 李清庭; L. T. Hieu; H. T. Hsu; D. Panda; C. H. Lin; E. Y. Chang
元智大學 Feb-23 Improved Off-State Leakage Current and Cutoff Frequency for AlGaN/GaN HEMT by Using Silicon-on-Insulator 李清庭; L. T. Hieu; H. T. Hsu; D. Panda; C. H. Lin; E. Y. Chang
元智大學 Feb-23 Effects of AlN/GaN superlattice buffer layer on performances of AlGaN/GaN HEMT grown on silicon for sub-6 GHz applications 李清庭; L. T. Hieu; H. T. Hsu; C. H. Chiang; D. Panda; C. H. Lin; E. Y. Chang
元智大學 Feb-22 Fabrication and characterization of AlGaN/GaN enhancement-mode MOSHEMTs with fin-channel array and hybrid gate-recessed structure and LiNbO3 ferroelectric charge trap gate stack structure 李清庭; H. Y. Lee; C. H. Lin
元智大學 Aug-22 Enhancement-Mode High-Frequency InAlGaN/GaN MIS-HEMT Fabricated by Implementing Oxygen-Based Digital Etching on the Quaternary Layer 李清庭; P. Y. Tsai; H. T. N. Nguyen; V. Nagarajan; C. H. Lin; C. F. Dee; S. C. Chen; H. C. Kuo; E. Y. Chang
元智大學 Aug-21 AlGaN/GaN enhancement-mode MOSHEMTs utilizing hybrid gate-recessed structure and ferroelectric charge trapping/storage stacked LiNbO3/HfO2/Al2O3 structure 李清庭; H. Y. Lee; C. H. Lin; C. C. Wei; J. C. Yang; E. Y. Chang
臺大學術典藏 2022-01-07T02:14:22Z Nanomechanics of Biomolecular Motor Proteins in Micromachined Structures T-C Ma; C-H Lin; C-T Lin; C-S Chen; CHUIN-SHAN CHEN
臺大學術典藏 2021-12-30T03:01:58Z Electroluminescence from the Ge quantum dot metal-oxide-semiconductor tunneling diodes M. H. Liao; C.-Y. Yu; T.-H. Guo; C.-H. Lin; C. W. Liu; MING-HAN LIAO

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