| 臺大學術典藏 |
2018-09-10T15:00:11Z |
Mid-infrared whispering gallery mode emission from InAsSb/InAsPSb multiple quantum wells in a disk cavity
|
H. H. Lin,; HAO-HSIUNG LIN; Y. C. Lin,; M. H. Mao,; C. J. Wu,; Y. C. Lin,;M. H. Mao,;C. J. Wu,;H. H. Lin, |
| 臺大學術典藏 |
2018-09-10T09:50:26Z |
Image based in situ electron-beam drift detection by silicon photodiodes in scanning-electron microscopy and an electron-beam lithography system
|
Y. H. Kuo;C. J. Wu;F. T. Kuo;J. Y. Yen;Y. Y. Chen; Y. H. Kuo; C. J. Wu; F. T. Kuo; J. Y. Yen; Y. Y. Chen; YUNG-YAW CHEN; JIA-YUSH YEN |
| 臺大學術典藏 |
2018-09-10T09:24:41Z |
Selective etching of InAsPSb and GaSb in HCl-H2O2-H2O solution
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S. H. Li;C. J. Wu;H. H. Lin; S. H. Li; C. J. Wu; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T09:24:40Z |
Study on the lattice structure of InAsPSb grown on GaAs
|
G. T. Chen,;C. J. Wu,;Z. C. Feng,;H. H. Lin,; G. T. Chen,; C. J. Wu,; Z. C. Feng,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T09:24:39Z |
Bond lengths and lattice structure of InP0.52Sb0.48 grown on GaAs
|
C. J. Wu;Z. C. Feng;W. M. Chang;C. C. Yang;H. H. Lin; C. J. Wu; Z. C. Feng; W. M. Chang; C. C. Yang; H. H. Lin; HAO-HSIUNG LIN; CHIH-CHUNG YANG |
| 臺大學術典藏 |
2018-09-10T09:24:39Z |
Study on the structural properties of InP0.52Sb0.48 on GaAs
|
C. J. Wu,;G. T. Chen,;Z. C. Feng,;W. M. Chang,;C. C. Yang,;H. H. Lin,; C. J. Wu,; G. T. Chen,; Z. C. Feng,; W. M. Chang,; C. C. Yang,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T08:46:01Z |
Study on the short range structure of InP0.52Sb0.48 grown by gas-source molecular-beam epitaxy
|
C. J. Wu,; K. T. Chen,; Z. C. Feng,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T08:46:01Z |
X-ray absorption find structures of InPSb alloys
|
C. J. Wu,; K. T. Chen,; Z. C. Feng,; W. M. Chang,; C. C. Yang,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T08:46:00Z |
Tetragonal distortion of InAsPSb film grown on InAs substrate studied by Rutherford backscattering/channeling and synchrotron X-ray diffraction
|
F. Cheng,; T. Fa,; S. Yao,; C. J. Wu,; H. H. Lin,; Z. C. Feng,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T08:18:09Z |
Beam Drift Detection using a Two-Dimensional Electron Beam Position Monitor System for Multiple-Electron-Beam–Direct-Write Lithography
|
S. Y. Chen;K. Y. Tsai;H. T. Ng;C. H. Fan;T. H. Pei;C. H. Kuan;Y. Y. Chen;Y. H. Kuo;C. J. Wu;J. Y. Yen; S. Y. Chen; K. Y. Tsai; H. T. Ng; C. H. Fan; T. H. Pei; C. H. Kuan; Y. Y. Chen; Y. H. Kuo; C. J. Wu; J. Y. Yen; YUNG-YAW CHEN |
| 臺大學術典藏 |
2018-09-10T08:17:52Z |
InAsPSb/InAs photodetectors grown by gas source molecular beam epitaxy
|
C. J. Wu,;S. W. Lo,;H. H. Lin,; C. J. Wu,; S. W. Lo,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T08:17:52Z |
Synchrotron radiation X-ray absorption investigation of InAsPSb films on GaAs by molecular beam epitaxy
|
Y. R. Lan,;C. J. Wu,;H. H. Lin,;L. Y. Chang,;Z. C. Feng,; Y. R. Lan,; C. J. Wu,; H. H. Lin,; L. Y. Chang,; Z. C. Feng,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T08:17:51Z |
Temperature dependent photoluminescence of InAsSb/InAsPSb multiple quantum well
|
C. J. Wu,;G. Tsai,;H. H. Lin,; C. J. Wu,; G. Tsai,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T08:17:51Z |
X-ray absorption fine-structure spectroscopy of InAsPSb grown by gas-source molecular-beam epitaxy
|
C. J. Wu,;Y. R. Lan,;L. Y. Chang,;Z. C. Feng,;H. H. Lin,; C. J. Wu,; Y. R. Lan,; L. Y. Chang,; Z. C. Feng,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T08:17:51Z |
Raman scattering of heavily Si-doped InAs grown by moleculr beam epitaxy
|
J. S. Tzeng,;C. J. Wu,;C. J. Hong-Liao,;H. H. Lin,; J. S. Tzeng,; C. J. Wu,; C. J. Hong-Liao,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T08:17:50Z |
Optical properties of As-rich InAsSb/InAsPSb multiple quantum well
|
C. J. Wu,;G. Tsai,;H. H. Lin; C. J. Wu,; G. Tsai,; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T08:17:50Z |
Raman scattering in InAsPSb quaternary alloys
|
J. S. Tzeng,;C. J. Wu,;H. H. Lin,; J. S. Tzeng,; C. J. Wu,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T08:17:50Z |
Investigation of InAsPSb/GaAs from molecular beam epitaxy by X-ray absorption fine-structure spectroscopy
|
Y. R. Lan,;C. J. Wu,;H. H. Lin,;T. S. Chan,;Z. C. Feng,; Y. R. Lan,; C. J. Wu,; H. H. Lin,; T. S. Chan,; Z. C. Feng,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T08:17:49Z |
Mid-infrared InAsPSb/InAs photodetectors grown by gas-source molecular beam epitaxy
|
S. W. Lo,;C. J. Wu,;H. H. Lin,; S. W. Lo,; C. J. Wu,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:41:17Z |
Thermal quenching of the photoluminescence of InAsSb/InAsPSb multiple quantum wells
|
C. J. Wu,;G. Tsai,;H. H. Lin,; C. J. Wu,; G. Tsai,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:41:16Z |
Photoluminescence of InAsSb/InAsPSb quantum well
|
C. J. Wu,;G. Tsai,;H. H. Lin,; C. J. Wu,; G. Tsai,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:41:15Z |
InAsSb/InAsPSb multiple quantum wells grown by molecular beam epitaxy
|
C. J. Wu,;G. Tsai,;H. H. Lin,; C. J. Wu,; G. Tsai,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:41:13Z |
Band alignment of InAs1-xSbx (0.05 < x < 0.13)/ InAs0.67P0.23Sb0.10 heterostructures
|
C. J. Wu;G. Tsai;H. H. Lin; C. J. Wu; G. Tsai; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:08:02Z |
Band alignment and valence band anticrossing model for InAsSb/InAsPSb heterojunction
|
C. J. Wu;G. Tsai;H. H. Lin; C. J. Wu; G. Tsai; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:08:01Z |
Band alignment of InAsSb/InAsPSb quantum well
|
C. J. Wu;G. Tsai;H. H. Lin; C. J. Wu; G. Tsai; H. H. Lin; HAO-HSIUNG LIN |
