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臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)
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2019臺灣學術機構典藏
研討會
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Institution Date Title Author
臺大學術典藏 2021-12-30T03:01:59Z The investigation of self-heating effect on Si1-xGex FinFETs with different device structures, Ge concentration, and operated voltages M.-H. Liao; C.-P. Hsieh; C.-C. Lee; MING-HAN LIAO
臺大學術典藏 2019-03-11T08:02:20Z The systematic investigation of self-heating effect on CMOS Logic transistors from 20 nm to 5 nm technology nodes by experimental thermo-electric measurements and finite element modeling C.-C. Lee;C.-P. Hsieh;M. H.Liao; M. H.Liao; C.-P. Hsieh; C.-C. Lee
臺大學術典藏 2019-03-11T08:02:20Z The systematic investigation of self-heating effect on CMOS Logic transistors from 20 nm to 5 nm technology nodes by experimental thermo-electric measurements and finite element modeling C.-C. Lee;C.-P. Hsieh;M. H.Liao; M. H.Liao; C.-P. Hsieh; C.-C. Lee
臺大學術典藏 2019-03-11T08:02:19Z The high performance Ge Metal-Oxide-Semiconductor Field-Effect Transistor with the magnetic metal gate C. P. Hsieh;S.-C. Huangn;M. H.Liao; M. H.Liao; S.-C. Huangn; C. P. Hsieh
臺大學術典藏 2019-03-11T08:02:19Z The high performance Ge Metal-Oxide-Semiconductor Field-Effect Transistor with the magnetic metal gate C. P. Hsieh;S.-C. Huangn;M. H.Liao; M. H.Liao; S.-C. Huangn; C. P. Hsieh
臺大學術典藏 2019-03-11T08:02:18Z The demonstration of the novel nanotube Si device with the promising device performance behavior C. P. Hsieh;M. H.Liao; M. H.Liao; C. P. Hsieh
臺大學術典藏 2019-03-11T08:02:18Z The demonstration of the novel nanotube Si device with the promising device performance behavior C. P. Hsieh;M. H.Liao; M. H.Liao; C. P. Hsieh
臺大學術典藏 2019-03-11T08:02:12Z STI Geometric Influence of a Recessed Surface on Array-type Arrangements of Nano-scaled Devices Strained by CESL and Ge-based Stressors S.-W. Cheng;P.-C. Huang;C.-P. Hsieh;C. C. Lee;M. H.Liao; M. H.Liao; C. C. Lee; C.-P. Hsieh; P.-C. Huang; S.-W. Cheng
臺大學術典藏 2019-03-11T08:02:12Z STI Geometric Influence of a Recessed Surface on Array-type Arrangements of Nano-scaled Devices Strained by CESL and Ge-based Stressors S.-W. Cheng;P.-C. Huang;C.-P. Hsieh;C. C. Lee;M. H.Liao; M. H.Liao; C. C. Lee; C.-P. Hsieh; P.-C. Huang; S.-W. Cheng
臺大學術典藏 2019-03-11T08:02:04Z Ge1-xSix on Ge-Based N-Type Metal-Oxide Semiconductor Field-Effect Transistors by Device Simulation Combined with High-Order StressPiezoresistive Relationships M. H.Liao; C.-C. Lee; C.-P. Hsieh; P.-C. Huang; S.-W. Cheng; S.-W. Cheng;P.-C. Huang;C.-P. Hsieh;C.-C. Lee;M. H.Liao
臺大學術典藏 2019-03-11T08:02:04Z Ge1-xSix on Ge-Based N-Type Metal-Oxide Semiconductor Field-Effect Transistors by Device Simulation Combined with High-Order StressPiezoresistive Relationships M. H.Liao; C.-C. Lee; C.-P. Hsieh; P.-C. Huang; S.-W. Cheng; S.-W. Cheng;P.-C. Huang;C.-P. Hsieh;C.-C. Lee;M. H.Liao
臺大學術典藏 2019-03-11T08:01:19Z ~20% Idsat improvement in the Si 3D FinFET with the implement of D-SMT process C. P. Hsieh;P.-G. Chen;M. H.Liao; M. H.Liao; P.-G. Chen; C. P. Hsieh
臺大學術典藏 2019-03-11T08:01:19Z ~20% Idsat improvement in the Si 3D FinFET with the implement of D-SMT process C. P. Hsieh;P.-G. Chen;M. H.Liao; M. H.Liao; P.-G. Chen; C. P. Hsieh
臺大學術典藏 2017 The investigation of selfheating effect on Si1-xGex FinFETs with different device structures, Ge concentration, and operated voltages C.-C. Lee;C.-P. Hsieh;M. H.Liao; M. H.Liao; C.-P. Hsieh; C.-C. Lee
臺大學術典藏 2017 The investigation of selfheating effect on Si1-xGex FinFETs with different device structures, Ge concentration, and operated voltages C.-C. Lee;C.-P. Hsieh;M. H.Liao; M. H.Liao; C.-P. Hsieh; C.-C. Lee

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