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Showing items 11-15 of 15  (1 Page(s) Totally)
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Institution Date Title Author
臺大學術典藏 2019-03-11T08:02:04Z Ge1-xSix on Ge-Based N-Type Metal-Oxide Semiconductor Field-Effect Transistors by Device Simulation Combined with High-Order StressPiezoresistive Relationships M. H.Liao; C.-C. Lee; C.-P. Hsieh; P.-C. Huang; S.-W. Cheng; S.-W. Cheng;P.-C. Huang;C.-P. Hsieh;C.-C. Lee;M. H.Liao
臺大學術典藏 2019-03-11T08:01:19Z ~20% Idsat improvement in the Si 3D FinFET with the implement of D-SMT process C. P. Hsieh;P.-G. Chen;M. H.Liao; M. H.Liao; P.-G. Chen; C. P. Hsieh
臺大學術典藏 2019-03-11T08:01:19Z ~20% Idsat improvement in the Si 3D FinFET with the implement of D-SMT process C. P. Hsieh;P.-G. Chen;M. H.Liao; M. H.Liao; P.-G. Chen; C. P. Hsieh
臺大學術典藏 2017 The investigation of selfheating effect on Si1-xGex FinFETs with different device structures, Ge concentration, and operated voltages C.-C. Lee;C.-P. Hsieh;M. H.Liao; M. H.Liao; C.-P. Hsieh; C.-C. Lee
臺大學術典藏 2017 The investigation of selfheating effect on Si1-xGex FinFETs with different device structures, Ge concentration, and operated voltages C.-C. Lee;C.-P. Hsieh;M. H.Liao; M. H.Liao; C.-P. Hsieh; C.-C. Lee

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