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Showing items 11-17 of 17  (1 Page(s) Totally)
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Institution Date Title Author
南台科技大學 2003-01 Improvement the Short-Channel Characteristics of a 0.1um PMOSFET with Ultra-Low Temperature Nitride Spacer by using a novel Oxide Capping Boron Up-Hill Treatment C. W. Yang; Y. K. Fang; C. H. Chen; W. D. Wang; S. F. Ting; S. F. Chen; J. Y. Cheng; M. F. Wang; C. L. Chen; L. G. Yao; T. L. Lee; S. C. Chen; C. H. Yu; M. S. Liang;陳世芳
南台科技大學 2003 Effect of polycrystailline-silicon gate types on the opposite flatband voltage shift in n-type and p-type metal-oxide-semiconductor field-effect transistor for high-k-HfO2 dielectric C. W. Yang; Y. K. Fang; C. H. Chen; S. F. Chen; C. Y. Lin; C. S. Lin; M. F. Wang; Y. M. Lin; T. H. Hou; C. H. Chen; L. G. Yao; S. C. Chen; M. S. Liang;陳世芳
南台科技大學 2003 HfO2/HfSixOy high-k gate stack with very low leakage current for low-power poly-si gated CMOS application C. W. Yang; Y. K. Fang; S. F. Chen; M. F. Wang; T.H.Hou; Y.M.Lin; L.G.Yao; S. C. Chen; M. S. Liang;陳世芳
國立中山大學 2003 Syntheses and X-ray structures of some pyrrolylaldiminate metal complexes L.C. Liang; C.W. Yang; M.Y. Chiang; C.H. Hung; P.Y. Lee
南台科技大學 2002-05 Downscaling limit of equivalent oxide thickness in formation ofultrathin gate dielectric by thermal-enhanced remote plasma nitridation C. H. Chen; Y. K. Fang; S. F. Ting; W. T. Hsieh; C. W. Yang; T. H. Hsu; M. C. Yu; T. L. Lee; S. C. Chen; C. H. Yu; M. S. Liang;陳順智;謝文哲
南台科技大學 2001-07 The Effect of Remote Plasma Nitridation on the Integrity of the Ultrathin Gate Dielectric Films in 0. 13mm CMOS Technology and Beyond S. F. Ting; Y. K. Fang; C. H. Chen; C. W. Yang; W. T. Hsieh; J. J. Ho; M. C. Yu; S. M. Jang; C. H. Yu; M. S. Liang; S. Chen; R. Shih;謝文哲
國立臺灣海洋大學 2001-07 The Effect of Remote Plasma Nitridation on the Integrity of the Ultrathin Gate Dielectric Films in 0.13 m CMOS Technology and Beyond S.F. Ting; Y.K. Fang; C.H. Chen; C.W. Yang; W.T. Hsieh; J.J. Ho; M.C. Yu; S.M. Jang; C.H. Yu; M.S. Liang; S. Chen; R. Shih

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