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Showing items 41-51 of 51 (3 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:25:27Z |
Investigation of post-NBTI stress recovery in pMOSFETs by direct measurement of single oxide charge de-trapping
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Chan, CT; Ma, HC; Tang, CJ; Wang, TH |
| 國立交通大學 |
2014-12-08T15:25:22Z |
Single-electron emission of traps in HfSiON as high-k gate dielectric for MOSFETs
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Chan, CT; Tang, CJ; Kuo, CH; Ma, HC; Tsai, CW; Wang, HCH; Chi, MH; Wang, T |
| 國立交通大學 |
2014-12-08T15:25:11Z |
Positive bias and temperature stress induced two-stage drain current degradation in HfSiON nMOSFET's
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Chan, CT; Tang, CJ; Wang, T; Wang, HCH; Tang, DD |
| 國立交通大學 |
2014-12-08T15:25:08Z |
Smart window adjustment for XCP's congestion management
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Yang, YR; Chan, CT; Chen, YC; Chan, YC |
| 國立交通大學 |
2014-12-08T15:19:41Z |
Ward identities and high energy scattering amplitudes in string theory
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Chan, CT; Ho, PM; Lee, JC |
| 國立交通大學 |
2014-12-08T15:19:29Z |
Stringy symmetries and their high-energy limits
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Chan, CT; Lee, JC |
| 國立交通大學 |
2014-12-08T15:18:12Z |
Solving all 4-point correlation functions for bosonic open string theory in the high-energy limit
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Chan, CT; Ho, PM; Lee, JC; Teraguchi, S; Yang, Y |
| 國立交通大學 |
2014-12-08T15:17:51Z |
One-loop massive scattering amplitudes and ward identities in string theory
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Chan, CT; Lee, JC |
| 國立交通大學 |
2014-12-08T15:17:04Z |
High energy scattering amplitudes of superstring theory
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Chan, CT; Lee, JC; Yang, Y |
| 國立交通大學 |
2014-12-08T15:16:38Z |
A novel transient characterization technique to investigate trap properties in HfSiON gate dielectric MOSFETs - From single electron emission to PBTI recovery transient
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Wang, TH; Chan, CT; Tang, CJ; Tsai, CW; Wang, HCH; Chi, MH; Tang, DD |
| 國立交通大學 |
2005-04-01 |
Anatomy of zero-norm states in string theory
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Chan, CT; Lee, JC; Yi-Yang |
Showing items 41-51 of 51 (3 Page(s) Totally)
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