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机构 日期 题名 作者
臺大學術典藏 2022-03-22T08:30:26Z The effect of N-doping on the electronic structure property and the li and Na storage capacity of graphene nanomaterials: A first-principles study Tsai Y.-J;Kuo C.-L.; Tsai Y.-J; Kuo C.-L.; CHIN-LUNG KUO
臺大學術典藏 2022-03-22T08:30:25Z The effect of N-doping on the electronic structure property and the li and Na storage capacity of graphene nanomaterials: A first-principles study Tsai Y.-J;Kuo C.-L.; Tsai Y.-J; Kuo C.-L.; CHIN-LUNG KUO
臺大學術典藏 2022-03-22T08:27:28Z The effect of N-doping on the electronic structure property and the li and Na storage capacity of graphene nanomaterials: A first-principles study Tsai Y.-J;Kuo C.-L.; Tsai Y.-J; Kuo C.-L.; CHIN-LUNG KUO
臺大學術典藏 2022-02-21T23:30:42Z Hierarchical nanotwins in Fe27Co24Ni23Cr26 high-entropy alloy subjected to high strain-rate Hopkinson bar deformation Chung, Tsai Fu; Lu, Shih Yuan; Lin, Yo Shiuan; Li, You Lin; Chiu, Po Han; Hsiao, Chien Nan; Chen, Chih Yuan; CHIN-LUNG KUO; Yeh, Jien Wei; Wang, Shing Hoa; Lee, Woei Shyan; JER-REN YANG
臺大學術典藏 2022-01-22T00:04:07Z The effect of N-doping on the electronic structure property and the li and Na storage capacity of graphene nanomaterials: A first-principles study Tsai, Yu Jen; CHIN-LUNG KUO
臺大學術典藏 2021-03-29T06:09:59Z 第一原理密度泛函理論計算在材料科技發展上的應用 郭錦龍;蔡秉均; 郭錦龍; 蔡秉均; CHIN-LUNG KUO
臺大學術典藏 2019-09-09T00:54:20Z The effects of annealing and wake-up cycling on the ferroelectricity of zirconium hafnium oxide ultrathin films prepared by remote plasma atomic layer deposition Lin, Bo Ting; MIIN-JANG CHEN; Hsu, Tzu Yao; TZONG-LIN JAY SHIEH; CHIN-LUNG KUO; Lin, Bo Ting;CHIN-LUNG KUO;TZONG-LIN JAY SHIEH;Hsu, Tzu Yao;MIIN-JANG CHEN
臺大學術典藏 2019-09-09T00:54:20Z The effects of annealing and wake-up cycling on the ferroelectricity of zirconium hafnium oxide ultrathin films prepared by remote plasma atomic layer deposition Lin, Bo Ting; MIIN-JANG CHEN; Hsu, Tzu Yao; TZONG-LIN JAY SHIEH; CHIN-LUNG KUO; Lin, Bo Ting;CHIN-LUNG KUO;TZONG-LIN JAY SHIEH;Hsu, Tzu Yao;MIIN-JANG CHEN
臺大學術典藏 2019-03-11T08:02:02Z Effect of hydrogen participation on the improvement in electrical characteristics of HfO2 gate dielectrics by post-deposition remote N2, N2/H2, and NH3 plasma treatments Miin-Jang Chen;Min-Hung Lee;Hsin-ChihLin;Chin-Lung Kuo;Jhih-Jie Huang;Ming-Lun Chang;Li-Tien Huang;M. H.Liao; M. H.Liao; Li-Tien Huang; Ming-Lun Chang; Jhih-Jie Huang; Chin-Lung Kuo; Hsin-ChihLin; Min-Hung Lee; Miin-Jang Chen
臺大學術典藏 2019-03-11T08:02:02Z Effect of hydrogen participation on the improvement in electrical characteristics of HfO2 gate dielectrics by post-deposition remote N2, N2/H2, and NH3 plasma treatments Miin-Jang Chen;Min-Hung Lee;Hsin-ChihLin;Chin-Lung Kuo;Jhih-Jie Huang;Ming-Lun Chang;Li-Tien Huang;M. H.Liao; M. H.Liao; Li-Tien Huang; Ming-Lun Chang; Jhih-Jie Huang; Chin-Lung Kuo; Hsin-ChihLin; Min-Hung Lee; Miin-Jang Chen

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