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Showing items 1-7 of 7 (1 Page(s) Totally)
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| 國立成功大學 |
2004-07 |
Comparative studies of InP/InGaAs single and double heterojunction bipolar transistors with a tunnelling emitter barrier structure
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Chen, Chun-Yuan; Cheng, Shiou-Ying; Chiou, Wen-Hui; Chuang, Hung-Ming; Fu, Ssu-I; Liu, Wen-Chau |
| 國立成功大學 |
2003-04 |
Dc characterization of an InP-InGaAs tunneling emitter bipolar transistor (TEBT)
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Chen, Chun-Yuan; Cheng, Shiou-Ying; Chiou, Wen-Hui; Chuang, Hung-Ming; Liu, Rong-Chau; Yen, Chih-Hung; Chen, Jing-Yuh; Cheng, Chin-Chuan;; Liu, Wen-Chau |
| 國立成功大學 |
2003-03 |
A novel InP/InGaAs TEBT for ultralow current operations
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Chen, Chun-Yuan; Cheng, Shiou-Ying; Chiou, Wen-Hui; Chuang, Hung-Ming; Liu, Wen-Chau |
| 國立成功大學 |
2003-01 |
On the high-performance n(+)-GaAs/p(+)-InGaP/n-GaAs high-barrier gate camel-like HFETs
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Wang, Chih-Kai; Yu, Kuo-Hui; Chiou, Wen-Hui; Chen, Chun-Yuan; Chuang, Hung-Ming; Liu, Wen-Chau |
| 國立成功大學 |
2002-09 |
A comparative study of GaAs- and InP-based superlattice emitter resonant tunneling bipolar transistors (SE-RTBT's)
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Chen, Chun-Yuan; Wang, Wei-Chou; Chiou, Wen-Hui; Wang, Chih-Kai; Chuang, Hung-Ming; Cheng, Shiou-Ying; Liu, Wen-Chau |
| 國立成功大學 |
2001-08 |
MOCVD grown InGaP/GaAs multiple negative-differential-resistance (MNDR) resonant-tunneling bipolar transistors
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Liu, Wen-Chau; Pan, Hsi-Jen; Yen, Chih-Hung; Lin, Kuan-Po; Wu, Cheng-Zu; Chiou, Wen-Hui; Chen, Chin-Ying |
| 國立成功大學 |
2001-08 |
A systematic study of MOCVD grown InP/InGaAlAs heterojunction bipolar transistors with anomalous switching behavior
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Liu, Wen-Chau; Wang, Wei-Chou; Yen, Chih-Hung; Cheng, Chin-Chuan; Wu, Cheng-Zu; Chiou, Wen-Hui; Chuen, C. Y. |
Showing items 1-7 of 7 (1 Page(s) Totally)
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