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Showing items 1-7 of 7 (1 Page(s) Totally)
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| 國立交通大學 |
2017-04-21T06:50:01Z |
A Low Operating Voltage IGZO TFT Using LaLuO3 Gate Dielectric
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Chou, Kun-I; Hsu, Hsiao-Hsuan; Cheng, Chun-Hu; Lee, Kai-Yu; Li, Shang-Rong; Chin, Albert |
| 國立交通大學 |
2017-04-21T06:50:00Z |
GeO2/PZT Resistive Random Access Memory Devices With Ni electrode
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Chou, Kun-I; Cheng, Chun-Hu; Chin, Albert |
| 國立交通大學 |
2017-04-21T06:49:59Z |
Current Uniformity Improvement in Flexible Resistive Memory
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Zheng, Zhi-Wei; Cheng, Chun-Hu; Chou, Kun-I; Liu, Ming; Chin, Albert |
| 國立交通大學 |
2015-07-21T08:29:20Z |
TiO2-Based Indium Phosphide Metal-Oxide-Semiconductor Capacitor with High Capacitance Density
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Cheng, Chun-Hu; Hsu, Hsiao-Hsuan; Chou, Kun-I |
| 國立交通大學 |
2014-12-08T15:36:20Z |
Performance comparison of titanium-oxide resistive switching memories using GeOx and AlOx capping layers for flexible application
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Chou, Kun-I; Cheng, Chun-Hu; Chin, Albert |
| 國立交通大學 |
2014-12-08T15:28:51Z |
Improved current distribution in resistive memory on flexible substrate using nitrogen-rich TaN electrode
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Zheng, Zhi-Wei; Cheng, Chun-Hu; Chou, Kun-I; Liu, Ming; Chin, Albert |
| 國立交通大學 |
2014-12-08T15:22:12Z |
Unipolar Ni/GeOx/PbZr0.5Ti0.5O3/TaN Resistive Switching Memory
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Chou, Kun-I; Cheng, Chun-Hu; Chen, Po-Chun; Yeh, Fon-Shan; Chin, Albert |
Showing items 1-7 of 7 (1 Page(s) Totally)
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