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| 淡江大學 |
2015 |
從習近平主政後對台政策析論兩岸關係的發展(2012-2014)
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周書廷;Chou, Shu-Ting |
| 國立交通大學 |
2014-12-08T15:40:02Z |
The transition mechanisms of quantum-dot/quantum-well mixed-mode infrared photodetectors
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Lin, Shih-Yen; Chou, Shu-Ting; Lin, Wei-Hsun |
| 國立交通大學 |
2014-12-08T15:12:14Z |
Influence of As-stabilized surface on the formation of InAs/GaAs quantum dots
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Tseng, Chi-Che; Chou, Shu-Ting; Chen, Yi-Hao; Chung, Tung-Hsun; Lin, Shih-Yen; Wu, Meng-Chyi |
| 國立交通大學 |
2014-12-08T15:11:17Z |
Enhanced normal-incident absorption of quantum-dot infrared photodetectors with smaller quantum dots
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Tseng, Chi-Che; Chou, Shu-Ting; Chen, Yi-Hao; Chen, Cheng-Nan; Lin, Wei-Hsun; Chung, Tung-Hsun; Lin, Shih-Yen; Chiu, Pei-Chin; Chyi, Jen-Inn; Wu, Meng-Chyi |
| 國立交通大學 |
2014-12-08T15:10:59Z |
Single-Period InAs-GaAs Quantum-Dot Infrared Photodetectors
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Chou, Shu-Ting; Lin, Shih-Yen; Tseng, Chi-Che; Chen, Yi-Hao; Chen, Cheng-Nan; Wu, Meng-Chyi |
| 國立交通大學 |
2014-12-08T15:10:43Z |
The transition mechanisms of a ten-period InAs/GaAs quantum-dot infrared photodetector
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Tseng, Chi-Che; Chou, Shu-Ting; Lin, Shin-Yen; Chen, Cheng-Nan; Lin, Wei-Hsun; Chen, Yi-Hao; Chung, Tung-Hsun; Wu, Meng-Chyi |
| 國立成功大學 |
2009-04 |
High-Responsivity InGaAs/InP Quantum-Well Infrared Photodetectors Prepared by Metal Organic Chemical Vapor Deposition
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Wang, Yung-Sheng; Chang, Shoou-Jinn; Chou, Shu-Ting; Lin, Shih-Yen; Lin, Wei |
| 國立東華大學 |
2007 |
Influences of silicon doping in quantum dot layers on optical characteristics of InAs/GaAs quantum dot infrared photodetector
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祁錦雲; Jim-Yong Chi;HUANG Chun-Yuan; OU Tzu-Min; CHOU Shu-Ting ;TSAI Cheng-Shuan; WU Meng-Chyi; LIN Shih-Yen; HSU Bang-Yu ;CHI C. C. |
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