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"chu ann kuo"的相关文件
显示项目 16-40 / 53 (共3页)
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| 國立交通大學 |
2014-12-08T15:36:49Z |
Influence of Oxygen Concentration on Self-Compliance RRAM in Indium Oxide Film
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Yang, Jyun-Bao; Chang, Ting-Chang; Huang, Jheng-Jie; Chen, Yu-Ting; Tseng, Hsueh-Chih; Chu, Ann-Kuo; Sze, Simon M.; Tsai, Ming-Jinn; Zheng, Jin-Cheng; Bao, Ding-Hua |
| 國立交通大學 |
2014-12-08T15:35:54Z |
Investigation of channel width-dependent threshold voltage variation in a-InGaZnO thin-film transistors
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Liu, Kuan-Hsien; Chang, Ting-Chang; Wu, Ming-Siou; Hung, Yi-Syuan; Hung, Pei-Hua; Hsieh, Tien-Yu; Chou, Wu-Ching; Chu, Ann-Kuo; Sze, Simon M.; Yeh, Bo-Liang |
| 國立交通大學 |
2014-12-08T15:35:51Z |
Dual operation characteristics of resistance random access memory in indium-gallium-zinc-oxide thin film transistors
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Yang, Jyun-Bao; Chang, Ting-Chang; Huang, Jheng-Jie; Chen, Yu-Chun; Chen, Yu-Ting; Tseng, Hsueh-Chih; Chu, Ann-Kuo; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:33:04Z |
Low power consumption resistance random access memory with Pt/InOx/TiN structure
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Yang, Jyun-Bao; Chang, Ting-Chang; Huang, Jheng-Jie; Chen, Yu-Ting; Tseng, Hsueh-Chih; Chu, Ann-Kuo; Sze, Simon M.; Tsai, Ming-Jinn |
| 國立交通大學 |
2014-12-08T15:32:05Z |
Impact of Electroforming Current on Self-Compliance Resistive Switching in an ITO/Gd:SiOx/TiN Structure
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Tseng, Hsueh-Chih; Chang, Ting-Chang; Wu, Yi-Chun; Wu, Sei-Wei; Huang, Jheng-Jie; Chen, Yu-Ting; Yang, Jyun-Bao; Lin, Tzu-Ping; Sze, Simon. M.; Tsai, Ming-Jinn; Wang, Ying-Lang; Chu, Ann-Kuo |
| 國立交通大學 |
2014-12-08T15:31:21Z |
Insertion of a Si layer to reduce operation current for resistive random access memory applications
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Chen, Yu-Ting; Chang, Ting-Chang; Peng, Han-Kuang; Tseng, Hsueh-Chih; Huang, Jheng-Jie; Yang, Jyun-Bao; Chu, Ann-Kuo; Young, Tai-Fa; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:31:09Z |
Enhancement of the stability of resistive switching characteristics by conduction path reconstruction
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Huang, Jheng-Jie; Chang, Ting-Chang; Yu, Chih-Cheng; Huang, Hui-Chun; Chen, Yu-Ting; Tseng, Hsueh-Chih; Yang, Jyun-Bao; Sze, Simon M.; Gan, Der-Shin; Chu, Ann-Kuo; Lin, Jian-Yang; Tsai, Ming-Jinn |
| 國立交通大學 |
2014-12-08T15:30:23Z |
Hot carrier effect on gate-induced drain leakage current in high-k/metal gate n-channel metal-oxide-semiconductor field-effect transistors
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Dai, Chih-Hao; Chang, Ting-Chang; Chu, Ann-Kuo; Kuo, Yuan-Jui; Ho, Szu-Han; Hsieh, Tien-Yu; Lo, Wen-Hung; Chen, Ching-En; Shih, Jou-Miao; Chung, Wan-Lin; Dai, Bai-Shan; Chen, Hua-Mao; Xia, Guangrui; Cheng, Osbert; Huang, Cheng Tung |
| 國立交通大學 |
2014-12-08T15:29:55Z |
Resistive switching characteristics of gallium oxide for nonvolatile memory application
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Yang, Jyun-Bao; Chang, Ting-Chang; Huang, Jheng-Jie; Chen, Shih-Ching; Yang, Po-Chun; Chen, Yu-Ting; Tseng, Hsueh-Chih; Sze, Simon M.; Chu, Ann-Kuo; Tsai, Ming-Jinn |
| 國立交通大學 |
2014-12-08T15:29:55Z |
Investigating bipolar resistive switching characteristics in filament type and interface type BON-based resistive switching memory
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Tseng, Hsueh-Chih; Chang, Ting-Chang; Cheng, Kai-Hung; Huang, Jheng-Jie; Chen, Yu-Ting; Jian, Fu-Yen; Sze, Simon M.; Tsai, Ming-Jinn; Chu, Ann-Kuo; Wang, Ying-Lang |
| 國立交通大學 |
2014-12-08T15:29:34Z |
Influence of molybdenum doping on the switching characteristic in silicon oxide-based resistive switching memory
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Chen, Yu-Ting; Chang, Ting-Chang; Huang, Jheng-Jie; Tseng, Hsueh-Chih; Yang, Po-Chun; Chu, Ann-Kuo; Yang, Jyun-Bao; Huang, Hui-Chun; Gan, Der-Shin; Tsai, Ming-Jinn; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:29:12Z |
Influence of forming process on resistance switching characteristics of In2O3/SiO2 bi-layer
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Huang, Jheng-Jie; Chang, Ting-Chang; Yang, Po-Chun; Chen, Yu-Ting; Tseng, Hsueh-Chih; Yang, Jyun-Bao; Sze, Simon M.; Chu, Ann-Kuo; Tsai, Ming-Jinn |
| 國立交通大學 |
2014-12-08T15:28:02Z |
Influence of Oxygen Concentration on Resistance Switching Characteristics of Gallium Oxide
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Huang, Jheng-Jie; Chang, Ting-Chang; Yang, Jyun-Bao; Chen, Shih-Ching; Yang, Po-Chun; Chen, Yu-Ting; Tseng, Hsueh-Chih; Sze, Simon M.; Chu, Ann-Kuo; Tsai, Ming-Jinn |
| 國立交通大學 |
2014-12-08T15:24:06Z |
Hot Carrier Effect on Gate-Induced Drain Leakage Current in n-MOSFETs with HfO2/Ti1-xNx Gate Stacks
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Dai, Chih-Hao; Chang, Ting-Chang; Chu, Ann-Kuo; Kuo, Yuan-Jui; Ho, Szu-Han; Hsieh, Tien-Yu; Lo, Wen-Hung; Chen, Ching-En; Shih, Jou-Miao; Chung, Wan-Lin; Dai, Bai-Shan; Chen, Hua-Mao; Xia, Guangrui; Cheng, Osbert; Huang, Cheng Tung |
| 國立交通大學 |
2014-12-08T15:21:35Z |
Charge trapping induced frequency-dependence degradation in n-MOSFETs with high-k/metal gate stacks
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Dai, Chih-Hao; Chang, Ting-Chang; Chu, Ann-Kuo; Kuo, Yuan-Jui; Hung, Ya-Chi; Lo, Wen-Hung; Ho, Szu-Han; Chen, Ching-En; Shih, Jou-Miao; Chung, Wan-Lin; Chen, Hua-Mao; Dai, Bai-Shan; Tsai, Tsung-Ming; Xia, Guangrui; Cheng, Osbert; Huang, Cheng Tung |
| 國立交通大學 |
2014-12-08T15:12:06Z |
Impact of static and dynamic stress on threshold voltage instability in high-k/metal gate n-channel metal-oxide-semiconductor field-effect transistors
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Dai, Chih-Hao; Chang, Ting-Chang; Chu, Ann-Kuo; Kuo, Yuan-Jui; Lo, Wen-Hung; Ho, Szu-Han; Chen, Ching-En; Shih, Jou-Miao; Chen, Hua-Mao; Dai, Bai-Shan; Xia, Guangrui; Cheng, Osbert; Huang, Cheng Tung |
| 國立交通大學 |
2014-12-08T15:06:49Z |
Enhanced gate-induced floating-body effect in PD SOI MOSFET under external mechanical strain
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Dai, Chih-Hao; Chang, Ting-Chang; Chu, Ann-Kuo; Kuo, Yuan-Jui; Chen, Shih-Ching; Tsai, Chih-Tsung; Lo, Wen-Hung; Ho, Szu-Han; Xia, Guangrui; Cheng, Osbert; Huang, Cheng Tung |
| 國立交通大學 |
2014-12-08T15:06:48Z |
On the Origin of Hole Valence Band Injection on GIFBE in PD SOI n-MOSFETs
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Dai, Chih-Hao; Chang, Ting-Chang; Chu, Ann-Kuo; Kuo, Yuan-Jui; Chen, Shih-Ching; Tsai, Chih-Chung; Ho, Szu-Han; Lo, Wen-Hung; Xia, Guangrui; Cheng, Osbert; Huang, Cheng Tung |
| 國立成功大學 |
2014-12-01 |
Anomalous degradation behaviors under illuminated gate bias stress in a-Si:H thin film transistor
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Tsai, Ming-Yen; Chang, Ting-Chang; Chu, Ann-Kuo; Hsieh, Tien-Yu; Lin, Kun-Yao; Wu, Yi-Chun; Huang, Shih-Feng; Chiang, Cheng-Lung; Chen, Po-Lin; Lai, Tzu-Chieh; Lo, Chang-Cheng; Lien, Alan |
| 國立成功大學 |
2014-10-21 |
Influence of an anomalous dimension effect on thermal instability in amorphous-InGaZnO thin-film transistors
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Liu, Kuan-Hsien; Chang, Ting-Chang; Chou, Wu-Ching; Chen, Hua-Mao; Tsai, Ming-Yen; Wu, Ming-Siou; Hung, Yi-Syuan; Hung, Pei-Hua; Hsieh, Tien-Yu; Tai, Ya-Hsiang; Chu, Ann-Kuo; Yeh, Bo-Liang |
| 國立成功大學 |
2014-09 |
Influence of Oxygen Concentration on Self-Compliance RRAM in Indium Oxide Film
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Yang, Jyun-Bao; Chang, Ting-Chang; Huang, Jheng-Jie; Chen, Yu-Ting; Tseng, Hsueh-Chih; Chu, Ann-Kuo; Sze, Simon M.; Tsai, Ming-Jinn; Zheng, Jin-Cheng; Bao, Ding-Hua |
| 國立成功大學 |
2014-04-14 |
Dual operation characteristics of resistance random access memory in indium-gallium-zinc-oxide thin film transistors
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Yang, Jyun-Bao; Chang, Ting-Chang; Huang, Jheng-Jie; Chen, Yu-Chun; Chen, Yu-Ting; Tseng, Hsueh-Chih; Chu, Ann-Kuo; Sze, Simon M. |
| 國立成功大學 |
2014-03-31 |
Investigation of channel width-dependent threshold voltage variation in a-InGaZnO thin-film transistors
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Liu, Kuan-Hsien; Chang, Ting-Chang; Wu, Ming-Siou; Hung, Yi-Syuan; Hung, Pei-Hua; Hsieh, Tien-Yu; Chou, Wu-Ching; Chu, Ann-Kuo; Sze, Simon M.; Yeh, Bo-Liang |
| 國立成功大學 |
2013-09-30 |
Asymmetric structure-induced hot-electron injection under hot-carrier stress in a-InGaZnO thin film transistor
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Tsai, Ming-Yen; Chang, Ting-Chang; Chu, Ann-Kuo; Chen, Te-Chih; Hsieh, Tien-Yu; Lin, Kun-Yao; Tsai, Wu-Wei; Chiang, Wen-Jen; Yan, Jing-Yi |
| 國立成功大學 |
2013-09-02 |
Low power consumption resistance random access memory with Pt/InOx/TiN structure
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Yang, Jyun-Bao; Chang, Ting-Chang; Huang, Jheng-Jie; Chen, Yu-Ting; Tseng, Hsueh-Chih; Chu, Ann-Kuo; Sze, Simon M.; Tsai, Ming-Jinn |
显示项目 16-40 / 53 (共3页)
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