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Showing items 11-18 of 18 (1 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:27:08Z |
Atomic force microscope study of GaN films grown by hydride vapor phase epitaxy
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Fang, HM; Wang, YK; Tsai, RY; Chu, CF; Wang, SC |
| 國立交通大學 |
2014-12-08T15:27:01Z |
Characteristics of optical properties of the interrupt growth method on InGaN/GaN MQW structures
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Lin, CF; Shu, CK; Lee, WH; Wen, TC; Chu, CF; Fang, JY; Chen, WK; Lee, WI; Wang, SC |
| 國立交通大學 |
2014-12-08T15:25:59Z |
Fabrication of p-side down GaN vertical ligbt emitting diodes on copper substrates by laser lift-off
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Chu, JT; Kuo, HC; Kao, CC; Huang, HW; Chu, CF; Lin, CF; Wang, SC |
| 國立交通大學 |
2014-12-08T15:25:47Z |
Large emitting area GaN based light emitting diode fabricated on conducting copper substrates
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Chu, JT; Liang, WD; Chu, CF; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:25:14Z |
Brightness enhancement of ITO/GaN LEDs by self-aligned micro-net structures
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Chang, KM; Chu, JY; Cheng, CC; Chu, CF |
| 國立交通大學 |
2014-12-08T15:25:13Z |
Effect of different n-electrode patterns on optical characteristics of large-area p-side down InGaN light-emitting diodes fabricated by laser lift-off
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Chu, JT; Liang, WD; Kao, CC; Huang, HW; Chu, CF; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:19:23Z |
Fabrication of large-area GaN-based light-emitting diodes on Cu substrate
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Chu, JT; Huang, HW; Kao, CC; Liang, WD; Lai, FI; Chu, CF; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:18:06Z |
Effects of different n-electrode patterns on optical characteristics of large-area p-side-down InGaN light-emitting diodes fabricated by laser lift-off
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Chu, JT; Kao, CC; Huang, HW; Liang, WD; Chu, CF; Lu, TC; Kuo, HC; Wang, SC |
Showing items 11-18 of 18 (1 Page(s) Totally)
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