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| 國立交通大學 |
2019-08-02T02:18:36Z |
Impact of the Stacking Order of HfOX and AlOX Dielectric Films on RRAM Switching Mechanisms to Behave Digital Resistive Switching and Synaptic Characteristics
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Chuang, Kai-Chi; Chu, Chi-Yan; Zhang, He-Xin; Luo, Jun-Dao; Li, Wei-Shuo; Cheng, Huang-Chung |
| 國立交通大學 |
2018-08-21T05:53:47Z |
Effects of Electric Fields on the Switching Properties Improvements of RRAM Device With a Field-Enhanced Elevated-Film-Stack Structure
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Chuang, Kai-Chi; Lin, Kuan-Yu; Luo, Jun-Dao; Li, Wei-Shuo; Li, Yi-Shao; Chu, Chi-Yan; Cheng, Huang-Chung |
| 國立交通大學 |
2018-08-21T05:53:43Z |
Impact of AlOx layer on resistive switching characteristics and device-to-device uniformity of bilayered HfOx-based resistive random access memory devices
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Chuang, Kai-Chi; Chung, Hao-Tung; Chu, Chi-Yan; Luo, Jun-Dao; Li, Wei-Shuo; Li, Yi-Shao; Cheng, Huang-Chung |
| 國立交通大學 |
2018-08-21T05:53:21Z |
Effects of post-metal annealing on the electrical characteristics of HfOx-based resistive switching memory devices
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Chuang, Kai-Chi; Lin, Kuan-Yu; Luo, Jun-Dao; Li, Wei-Shuo; Li, Yi-Shao; Chu, Chi-Yan; Cheng, Huang-Chung |
| 國立交通大學 |
2018-01-24T07:41:42Z |
雙層介電質薄膜之電阻式記憶體之研究
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朱治印; 鄭晃忠; Chu, Chi-Yan; Cheng, Huang-Chung |
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