English  |  正體中文  |  简体中文  |  2809385  
???header.visitor??? :  26972953    ???header.onlineuser??? :  1110
???header.sponsordeclaration???
 
臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)
???ui.leftmenu.abouttair???

???ui.leftmenu.bartitle???

???index.news???

???ui.leftmenu.copyrighttitle???

???ui.leftmenu.link???

"chu chung ming"???jsp.browse.items-by-author.description???

???jsp.browse.items-by-author.back???
???jsp.browse.items-by-author.order1??? ???jsp.browse.items-by-author.order2???

Showing items 1-11 of 11  (1 Page(s) Totally)
1 
View [10|25|50] records per page

Institution Date Title Author
國立交通大學 2018-08-21T05:54:21Z Enhancement-Mode GaN MIS-HEMTs With LaHfOx Gate Insulator for Power Application Lin, Yueh Chin; Huang, Yu Xiang; Huang, Gung Ning; Wu, Chia Hsun; Yao, Jing Neng; Chu, Chung Ming; Chang, Shane; Hsu, Chia Chieh; Lee, Jin Hwa; Kakushima, Kuniyuki; Tsutsui, Kazuo; Iwai, Hiroshi; Chang, Edward Yi
國立交通大學 2018-01-24T07:41:54Z 複合高介電係數閘極介電層在三五族半導體中之缺陷特性及其可靠度研究 曲崇銘; 李威儀; Chu, Chung-Ming; Lee, Wei-I
國立交通大學 2017-04-21T06:55:56Z Au-Free GaN High-Electron-Mobility Transistor with Ti/Al/W Ohmic and WN (X) Schottky Metal Structures for High-Power Applications Hsieh, Ting-En; Lin, Yueh-Chin; Chu, Chung-Ming; Chuang, Yu-Lin; Huang, Yu-Xiang; Shi, Wang-Cheng; Dee, Chang-Fu; Majlis, Burhanuddin Yeop; Lee, Wei-I; Chang, Edward Yi
國立交通大學 2017-04-21T06:55:49Z Investigations of GaN growth on the sapphire substrate by MOCVD method with different AlN buffer deposition temperatures Huang, Wei-Ching; Chu, Chung-Ming; Wong, Yuen Yee; Chen, Kai-Wei; Lin, Yen-Ku; Wu, Chia-Hsun; Lee, Wei-I; Chang, Edward-Yi
國立交通大學 2017-04-21T06:55:41Z Reliability study of high-k La2O3/HfO2 and HfO2/La2O3 stacking layers on n-In0.53Ga0.47As metal-oxide-semiconductor capacitor Chu, Chung-Ming; Lin, Yueh-Chin; Lee, Wei-I; Dee, Chang Fu; Wong, Yuen-Yee; Majlis, Burhanuddin Yeop; Salleh, Muhamad Mat; Yap, Seong Ling; Chang, Edward Yi
國立交通大學 2017-04-21T06:55:41Z The Effect of the Thickness of the Low Temperature AlN Nucleation Layer on the Material Properties of GaN Grown on a Double-Step AlN Buffer Layer by the MOCVD Method Huang, Wei-Ching; Chu, Chung-Ming; Hsieh, Chi-Feng; Wong, Yuen-Yee; Chen, Kai-Wei; Lee, Wei-I; Tu, Yung-Yi; Chang, Edward-Yi; Dee, Chang Fu; Majlis, B. Y.; Yap, S. L.
國立臺灣大學 2016 Evaluation of Pulmonary Nodules Clinical Practice Consensus Guidelines for Asia Bai, Chunxue; Choi, Chang-Min; Chu, Chung Ming; Anantham, Devanand; Ho, James Chung-man; Khan, Ali Zamir; Lee, Jang-Ming; Li, Shi Yue; Saenghirunvattana, Sawang; Yim, Anthony; 李章銘
國立交通大學 2015-12-02T02:59:32Z Use of hydrogen etching to remove existing dislocations in GaN epitaxial layers Yeh, Yen-Hsien; Chu, Chung-Ming; Wu, Yin-Hao; Hsu, Ying-Chia; Yu, Tzu-Yi; Lee, Wei-I
國立交通大學 2015-07-21T11:20:39Z The effect of free-standing GaN substrate on carrier localization in ultraviolet InGaN light-emitting diodes Tsai, Ming-Ta; Chu, Chung-Ming; Huang, Che-Hsuan; Wu, Yin-Hao; Chiu, Ching-Hsueh; Li, Zhen-Yu; Tu, Po-Min; Lee, Wei-I; Kuo, Hao-Chung
國立交通大學 2014-12-12T02:15:27Z 氮化鎵蕭基二極體電性研究 曲崇銘; Chu, Chung Ming; 李威儀; Wei-I Lee
國立交通大學 2014-12-08T15:31:58Z A Simple Growth Method to Produce a-Plane GaN Thick Films by Hydride Vapor Phase Epitaxy Wu, Yin-Hao; Lee, Chuo-Han; Chu, Chung-Ming; Yeh, Yen-Hsien; Chen, Chan-Lin; Lee, Wei-I

Showing items 1-11 of 11  (1 Page(s) Totally)
1 
View [10|25|50] records per page