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| 國立交通大學 |
2019-04-03T06:47:15Z |
Single mode 1.27-mu m InGaAS : Sb-GaAs-GaAsP quantum well vertical cavity surface emitting lasers
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Kuo, HC; Chang, YA; Chang, YH; Chu, JT; Tsai, MY; Wang, SC |
| 國立交通大學 |
2014-12-08T15:41:09Z |
InP/InGaAlAs distributed Bragg reflectors grown by low-pressure metal organic chemical vapor deposition
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Lu, TC; Tsai, JY; Chu, JT; Chang, YS; Wang, SC |
| 國立交通大學 |
2014-12-08T15:39:20Z |
Study of GaN light-emitting diodes fabricated by laser lift-off technique
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Chu, CF; Lai, FI; Chu, JT; Yu, CC; Lin, CF; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:37:27Z |
Investigation of GaN LED with Be-implanted Mg-doped GaN layer
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Huang, HW; Kao, CC; Chu, JT; Kuo, HC; Wang, SC; Yu, CC; Lin, CF |
| 國立交通大學 |
2014-12-08T15:37:26Z |
Fabrication of GaN-based nanorod light emitting diodes using self-assemble nickel nano-mask and inductively coupled plasma reactive ion etching
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Huang, HW; Kao, CC; Hsueh, TH; Yu, CC; Lin, CF; Chu, JT; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:37:05Z |
Single-mode 1.27-mu m InGaAs : Sb-GaAs-GaAsP quantum well vertical cavity surface emitting lasers
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Kuo, HC; Chang, YH; Chang, YA; Lai, FI; Chu, JT; Tsai, MN; Wang, SC |
| 國立交通大學 |
2014-12-08T15:37:01Z |
Light-output enhancement in a nitride-based light-emitting diode with 22 degrees undercut sidewalls
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Kao, CC; Kuo, HC; Huang, HW; Chu, JT; Peng, YC; Hsieh, YL; Luo, CY; Wang, SC; Yu, CC; Lin, CF |
| 國立交通大學 |
2014-12-08T15:25:59Z |
Fabrication of p-side down GaN vertical ligbt emitting diodes on copper substrates by laser lift-off
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Chu, JT; Kuo, HC; Kao, CC; Huang, HW; Chu, CF; Lin, CF; Wang, SC |
| 國立交通大學 |
2014-12-08T15:25:47Z |
Large emitting area GaN based light emitting diode fabricated on conducting copper substrates
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Chu, JT; Liang, WD; Chu, CF; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:25:47Z |
InGaN-based light-emitting diode with undercut side wall
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Kao, CC; Chu, JT; Huang, HW; Peng, YC; Yu, CC; Hseih, YL; Lin, CF; Kuo, HC; Wang, SC |
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