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Showing items 1-4 of 4 (1 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:42:16Z |
The variation of ohmic contacts and surface characteristics on p-GaN induced by reactive ion etching
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Chang, KM; Cheng, CC; Chu, JY |
| 國立交通大學 |
2014-12-08T15:38:46Z |
Highly reliable GaN-based light-emitting diodes formed by p-In0.1Ga0.9N-ITO structure
|
Chang, KM; Chu, JY; Cheng, CC |
| 國立交通大學 |
2014-12-08T15:25:14Z |
Brightness enhancement of ITO/GaN LEDs by self-aligned micro-net structures
|
Chang, KM; Chu, JY; Cheng, CC; Chu, CF |
| 國立交通大學 |
2014-12-08T15:19:01Z |
Enhancement in light output of InGaN-based microhole array light-emitting diodes
|
Hsueh, TH; Shen, JK; Huang, HW; Chu, JY; Kao, CC; Kuo, HC; Wang, SC |
Showing items 1-4 of 4 (1 Page(s) Totally)
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