|
|
Taiwan Academic Institutional Repository >
Browse by Author
|
"chu kuei yi"
Showing items 1-26 of 26 (1 Page(s) Totally)
1
View [10|25|50] records per page
| 國立成功大學 |
2012-06 |
Comprehensive study of InGaP/InGaAs/GaAs dual channel pseudomorphic high electron mobility transistors
|
Chu, Kuei-Yi; Cheng, Shiou-Ying; Chiang, Meng-Hsueh; Liu, Yi-Jung; Huang, Chien-Chang; Chen, Tai-You; Hsu, Chi-Shiang; Liu, Wen-Chau; Cheng, Wen-Yu; Lin, Bin-Cian |
| 國立成功大學 |
2012-02 |
Characteristics of InGaP/InGaAs Pseudomorphic High Electron Mobility Transistors with Triple Delta-Doped Sheets
|
Chu, Kuei Yi; Chiang, Meng Hsueh; Cheng, Shiou Ying; Liu, Wen Chau |
| 國立成功大學 |
2011-12 |
Improved current-spreading performance of an InGaN-based light-emitting diode with a clear p-GaN/n-GaN barrier junction
|
Liu, Yi-Jung; Guo, Der-Feng; Chu, Kuei-Yi; Cheng, Shiou-Ying; Liou, Jian-Kai; Chen, Li-Yang; Tsai, Tsung-Han; Huang, Chien-Chang; Chen, Tai-You; Hsu, Chi-Shian; Tsai, Tsung-Yuan; Liu, Wen-Chau |
| 國立成功大學 |
2011-10 |
Effect of graded triple delta-doped sheets on the performance of GaAs based dual channel pseudomorphic high electron mobility transistors
|
Chu, Kuei-Yi; Cheng, Shiou-Ying; Chiang, Meng-Hsueh; Liu, Yi-Jung; Huang, Chien-Chang; Chen, Tai-You; Hsu, Chi-Shiang; Liu, Wen-Chau; Cheng, Wen-Yu; Lin, Bin-Cian |
| 國立成功大學 |
2008-11 |
On an InGaP/InGaAs Double Channel Pseudomorphic High Electron Mobility Transistor With Graded Triple delta-Doped Sheets
|
Chen, Li-Yang; Cheng, Shiou-Ying; Chen, Tzu-Pin; Chu, Kuei-Yi; Tsai, Tsung-Han; Liu, Yi-Chun; Liao, Xin-Da; Liu, Wen-Chau |
| 國立成功大學 |
2008-09-25 |
Transient response of a transistor-based hydrogen sensor
|
Tsai, Yan-Ying; Lin, Kun-Wei; Chen, Huey-Ing; Liu, I-Ping; Hung, Ching-Wen; Chen, Tzu-Pin; Tsai, Tsung-Han; Chen, Li-Yang; Chu, Kuei-Yi; Liu, Wen-Chau |
| 國立成功大學 |
2008-07-28 |
Comprehensive study of a Pd/Al0.24Ga0.76As-based field-effect-transistor-type hydrogen sensor
|
Tsai, Yan-Ying; Lin, Kun-Wei; Chen, Huey-Ing; Hung, Ching-Wen; Chen, Tzu-Pin; Tsai, Tsung-Han; Chen, Li-Yang; Chu, Kuei-Yi; Liu, Wen-Chau |
| 國立成功大學 |
2008-07-15 |
Hydrogen sensing properties of a Pt-oxide-GaN Schottky diode
|
Tsai, Yan-Ying; Lin, Kun-Wei; Chen, Huey-Ing; Liu, I-Ping; Hung, Ching-Wen; Chen, Tzu-Pin; Tsai, Tsung-Han; Chen, Li-Yang; Chu, Kuei-Yi; Liu, Wen-Chau |
| 國立成功大學 |
2008-06-05 |
Improved performance of non-annealed ohmic-recess metamorphic high electron mobility transistor
|
Chen, Li-Yang; Cheng, Shiou-Ying; Chu, Kuei-Yi; Hung, Ching-Wen; Chen, Tzu-Pin; Tsai, Tsung-Han; Liu, Wen-Chau |
| 國立成功大學 |
2008-06-01 |
Temperature-dependent characteristics of an InP/InGaAs double heterojunction bipolar transistor with a step-graded InAlGaAs collector
|
Chen, Tzu-Pin; Chen, Wei-Hsin; Lee, Chi-Jhung; Chu, Kuei-Yi; Chen, Li-Yang; Hung, Ching-Wen; Tsai, Tsung-Han; Cheng, Shiou-Ying; Liu, Wen-Chau |
| 國立成功大學 |
2008-06 |
Comprehensive study on hydrogen sensing properties of a Pd-AlGaN-based Schottky diode
|
Tsai, Tsung-Han; Chen, Huey-Ing; Lin, Kun-Wei; Hung, Ching-Wen; Hsu, Chia-Hao; Chen, Li-Yang; Chu, Kuei-Yi; Liu, Wen-Chau |
| 國立成功大學 |
2008-04 |
Influence of emitter-ledge thickness on the surface-recombination mechanism of InGaP/GaAs heterojunction bipolar transistor
|
Chu, Kuei-Yi; Cheng, Shiou-Ying; Chen, Tzu-Pin; Hung, Ching-Wen; Chen, Li-Yang; Tsai, Tsung-Han; Liu, Wen-Chau; Chen, Lu-An |
| 國立成功大學 |
2008-04 |
Hydrogen sensing characteristics of a Pd/AlGaN/GaN Schottky diode
|
Tsai, Tsung-Han; Chen, Huey-Ing; Lin, Kun-Wei; Hung, Ching-Wen; Hsu, Chia-Hao; Chen, Tzu-Pin; Chen, Li-Yang; Chu, Kuei-Yi; Chang, Chung-Fu; Liu, Wen-Chau |
| 國立成功大學 |
2008-04 |
On the hydrogen sensing behaviors of an InAlAs-based Schottky diode with a thin Pt catalytic metal
|
Yen, Chih-Hung; Hung, Ching-Wen; Chen, Huey-Ing; Tsai, Tsung-Han; Chen, Tzu-Pin; Chen, Li-Yang; Chu, Kuei-Yi; Liu, Wen-Chau |
| 國立成功大學 |
2008-03 |
Comparative study on temperature-dependent characteristics of InP/InGaAs single- and double-heterojunction bipolar transistors
|
Chen, Wei-Hsin; Chen, Tzu-Pin; Lee, Chi-Jhung; Hung, Ching-Wen; Chu, Kuei-Yi; Chen, Li-Yang; Tsai, Tsung-Han; Liu, Wen-Chau |
| 國立成功大學 |
2008-03 |
Characteristics of an InGaP/AlXGa1-XAs/GaAs composite-emitter heterojunction bipolar transistor (CEHBT)
|
Cheng, Shiou-Ying; Chu, Kuei-Yi; Chen, Li-Yang; Chen, Lu-An; Liu, Wen-Chau |
| 國立成功大學 |
2008-01-15 |
Temperature-dependent hydrogen sensing characteristics of a new Pt/InAlAs Schottky diode-type sensor
|
Hung, Ching-Wen; Tsai, Tsung-Han; Chen, Huey-Ing; Tsai, Yan-Ying; Chen, Tzu-Pin; Chen, Li-Yang; Chu, Kuei-Yi; Liu, Wen-Chau |
| 國立成功大學 |
2008-01 |
A new InP/InGaAs double heterojunction bipolar transistor with a step-graded InAlGaAs collector structure
|
Chen, Tzu-Pin; Cheng, Shiou-Ying; Hung, Ching-Wen; Chu, Kuei-Yi; Chen, Li-Yang; Tsai, Tsung-Han; Liu, Wen-Chau |
| 國立成功大學 |
2008 |
Characteristics of an InP/InGaAs double heterojunction bipolar transistor with an InAlGaAs/InP composite collector structure
|
Chen, Tzu-Pin; Cheng, Shiou-Ying; Chen, Wei-Hsin; Hung, Ching-Wen; Chu, Kuei-Yi; Chen, Li-Yang; Tsai, Tsung-Han; Liu, Wen-Chau |
| 國立成功大學 |
2008 |
Hydrogen-induced effect on device performance of a Pd/GaAs-based heterostructure field-effect transistor
|
Hung, Ching-Wen; Chen, Huey-Ing; Tsai, Tsung-Han; Chang, Chung-Fu; Chen, Tzu-Pin; Chen, Li-Yang; Chu, Kuei-Yi; Liu, Wen-Chau |
| 國立成功大學 |
2008 |
Effect of nonannealed ohmic-recess structure on temperature-dependent characteristics of metamorphic high-electron-mobility transistors
|
Chen, Li-Yang; Cheng, Shiou-Ying; Chu, Kuei-Yi; Tsai, Tsung-Han; Chen, Tzu-Pin; Hung, Ching-Wen; Liu, Wen-Chau |
| 國立成功大學 |
2007 |
A hydrogen gas sensitive Pt-In0.5Al0.5P metal-semiconductor schottky diode
|
Tsai, Yan-Ying; Chen, Huey-Ing; Hung, Ching-Wen; Chen, Tzu-Pin; Tsai, Tsung-Han; Chu, Kuei-Yi; Chen, Li-Yang; Liu, Wen-Chau |
| 國立成功大學 |
2007 |
On the temperature-dependent electron impact ionizations in a step-graded InAlGaAs/InP collector double heterojunction bipolar transistor
|
Chen, Tzu-Pin; Hung, Ching-Wen; Chu, Kuei-Yi; Chen, Li-Yang; Tsai, Tsung-Han; Cheng, Shiou-Ying; Liu, Wen-Chau |
| 國立成功大學 |
2006-12 |
Further suppression of surface-recombination of an InGaP/GaAs HBT by conformal passivation
|
Fu, Ssu-I; Cheng, Shiou-Ying; Chen, Tzu-Pin; Lai, Po-Hsien; Hung, Ching-Wen; Chu, Kuei-Yi; Chen, Li-Yang; Liu, Wen-Chau |
| 國立成功大學 |
2006-12 |
The effect of sulfur treatment on the temperature-dependent performance of InGaP/GaAs HBTs
|
Cheng, Shiou-Ying; Fu, Ssu-I; Chen, Tzu-Pin; Lai, Po-Hsien; Liu, Rong-Chau; Chu, Kuei-Yi; Chen, Li-Yang; Liu, Wen-Chau |
| 國立成功大學 |
2006-03 |
Improved dc and microwave performance of heterojunction bipolar transistors by full sulfur passivation
|
Cheng, Shiou-Ying; Fu, Ssu-I; Chu, Kuei-Yi; Lai, Po-Hsien; Chen, Li-Yang; Liu, Wen-Chau; Chiang, Meng-Hsueh |
Showing items 1-26 of 26 (1 Page(s) Totally)
1
View [10|25|50] records per page
|
