臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)

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	2019臺灣學術機構典藏研討會
	機構典藏系統RC7版本已發佈

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	臺大學術典藏NTU Scholars

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Institution	Date	Title	Author
臺大學術典藏	2020-01-06T03:10:32Z	Synthesis of Methane Hydrate from Ice Powder Accelerated by Doping Ethanol into Methane Gas	Chen, Y.-A.; Chu, L.-K.; Chu, C.-K.; Ohmura, R.; Chen, L.-J.; LI-JEN CHEN
臺大學術典藏	2019-12-27T07:49:45Z	Depletion-mode GaAs-based MOSFET with Ga 2 O 3 (Gd 2 O 3 ) as a gate dielectric	Tsai, P.J.; Chu, L.K.; Chen, Y.W.; Chiu, Y.N.; Yang, H.P.; Chang, P.; Kwo, J.; Chi, J.; Hong, M.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:40Z	Si metal-oxide-semiconductor devices with high 庥 Hf O2 fabricated using a novel MBE template approach followed by atomic layer deposition	Pan, C.H.;Kwo, J.;Lee, K.Y.;Lee, W.C.;Chu, L.K.;Huang, M.L.;Lee, Y.J.;Hong, M.; Pan, C.H.; Kwo, J.; Lee, K.Y.; Lee, W.C.; Chu, L.K.; Huang, M.L.; Lee, Y.J.; Hong, M.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:37Z	Metal-oxide-semiconductor devices with molecular beam epitaxy-grown Y2O3 on Ge	Chu, L.K.;Lee, W.C.;Huang, M.L.;Chang, Y.H.;Tung, L.T.;Chang, C.C.;Lee, Y.J.;Kwo, J.;Hong, M.; Chu, L.K.; Lee, W.C.; Huang, M.L.; Chang, Y.H.; Tung, L.T.; Chang, C.C.; Lee, Y.J.; Kwo, J.; Hong, M.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:37Z	Molecular beam epitaxy-grown Al2O3/HfO2 high-庥 dielectrics for germanium	Lee, W.C.;Chin, B.H.;Chu, L.K.;Lin, T.D.;Lee, Y.J.;Tung, L.T.;Lee, C.H.;Hong, M.;Kwo, J.; Lee, W.C.; Chin, B.H.; Chu, L.K.; Lin, T.D.; Lee, Y.J.; Tung, L.T.; Lee, C.H.; Hong, M.; Kwo, J.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:36Z	Ga2O3(Gd2O3) on Ge without interfacial layers: Energy-band parameters and metal oxide semiconductor devices	Chu, L.K.;Lin, T.D.;Huang, M.L.;Chu, R.L.;Chang, C.C.;Kwo, J.;Hong, M.; Chu, L.K.; Lin, T.D.; Huang, M.L.; Chu, R.L.; Chang, C.C.; Kwo, J.; Hong, M.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:35Z	High performance Ga2O3(Gd2O 3)/Ge MOS devices without interfacial layers	Chu, L.K.;Chu, R.L.;Huang, M.L.;Tung, L.T.;Lin, T.D.;Chang, C.C.;Kwo, J.;Hong, M.; Chu, L.K.; Chu, R.L.; Huang, M.L.; Tung, L.T.; Lin, T.D.; Chang, C.C.; Kwo, J.; Hong, M.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:35Z	Metal-oxide-semiconductor devices with UHV-Ga 2 O 3 (Gd 2 O 3 ) on Ge(100)	Chu, L.K.;Lin, T.D.;Lee, C.H.;Tung, L.T.;Lee, W.C.;Chu, R.L.;Chang, C.C.;Hong, M.;Kwo, J.; Chu, L.K.; Lin, T.D.; Lee, C.H.; Tung, L.T.; Lee, W.C.; Chu, R.L.; Chang, C.C.; Hong, M.; Kwo, J.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:33Z	Effective passivation and high-performance metal-oxide-semiconductor devices using ultra-high-vacuum deposited high-庥 dielectrics on Ge without interfacial layers	Chu, L.K.;Chu, R.L.;Lin, T.D.;Lee, W.C.;Lin, C.A.;Huang, M.L.;Lee, Y.J.;Kwo, J.;Hong, M.; Chu, L.K.; Chu, R.L.; Lin, T.D.; Lee, W.C.; Lin, C.A.; Huang, M.L.; Lee, Y.J.; Kwo, J.; Hong, M.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:32Z	Achieving high-performance Ge MOS devices using high-庥 gate dielectrics Ga2O3(Gd2O3) of sub-nm EOT	Chu, L.K.;Chu, R.L.;Lin, C.A.;Lin, T.D.;Chiang, T.H.;Kwo, J.;Hong, M.; Chu, L.K.; Chu, R.L.; Lin, C.A.; Lin, T.D.; Chiang, T.H.; Kwo, J.; Hong, M.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:31Z	InGaAs and Ge MOSFETs with a common high 庥 gate dielectric	Lee, W.C.;Lin, T.D.;Chu, L.K.;Chang, P.;Chang, Y.C.;Chu, R.L.;Chiu, H.C.;Lin, C.A.;Chang, W.H.;Chiang, T.H.;Lee, Y.J.;Hong, M.;Kwo, J.; Lee, W.C.; Lin, T.D.; Chu, L.K.; Chang, P.; Chang, Y.C.; Chu, R.L.; Chiu, H.C.; Lin, C.A.; Chang, W.H.; Chiang, T.H.; Lee, Y.J.; Hong, M.; Kwo, J.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:30Z	High-resolution core-level photoemission study of CF 4 -treated Gd 2 O 3 (Ga 2 O 3 ) gate dielectric on Ge probed by synchrotron radiation	Pi, T.-W.;Huang, M.L.;Lee, W.C.;Chu, L.K.;Lin, T.D.;Chiang, T.H.;Wang, Y.C.;Wu, Y.D.;Hong, M.;Kwo, J.; Pi, T.-W.; Huang, M.L.; Lee, W.C.; Chu, L.K.; Lin, T.D.; Chiang, T.H.; Wang, Y.C.; Wu, Y.D.; Hong, M.; Kwo, J.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:29Z	Direct determination of flat-band voltage for metal/high 庥 oxide/semiconductor heterointerfaces by electric-field-induced second-harmonic generation	Chang, Y.-M.; MINGHWEI HONG; Kwo, J.; Hong, M.; Chu, L.K.; Chang, C.-L.;Lee, W.C.;Chu, L.K.;Hong, M.;Kwo, J.;Chang, Y.-M.; Chang, C.-L.; Lee, W.C.
臺大學術典藏	2019-12-27T07:49:29Z	InGaAs and Ge MOSFETs with high 庥 dielectrics	Lee, W.C.;Chang, P.;Lin, T.D.;Chu, L.K.;Chiu, H.C.;Kwo, J.;Hong, M.; Lee, W.C.; Chang, P.; Lin, T.D.; Chu, L.K.; Chiu, H.C.; Kwo, J.; Hong, M.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:29Z	Electronic structures of Ga 2 O 3 (Gd 2 O 3 ) gate dielectric on n-Ge(001) as grown and after CF 4 plasma treatment: A synchrotron-radiation photoemission study	Pi, T.-W.;Lee, W.C.;Huang, M.L.;Chu, L.K.;Lin, T.D.;Chiang, T.H.;Wang, Y.C.;Wu, Y.D.;Hong, M.;Kwo, J.; Pi, T.-W.; Lee, W.C.; Huang, M.L.; Chu, L.K.; Lin, T.D.; Chiang, T.H.; Wang, Y.C.; Wu, Y.D.; Hong, M.; Kwo, J.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:25Z	Low interfacial trap density and sub-nm equivalent oxide thickness in In0.53Ga0.47As (001) metal-oxide-semiconductor devices using molecular beam deposited HfO2/Al2O3 as gate dielectrics	Chu, L.K.;Merckling, C.;Alian, A.;Dekoster, J.;Kwo, J.;Hong, M.;Caymax, M.;Heyns, M.; Chu, L.K.; Merckling, C.; Alian, A.; Dekoster, J.; Kwo, J.; Hong, M.; Caymax, M.; Heyns, M.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:23Z	Metal oxide semiconductor device studies of molecular-beam-deposited Al 2O 3/InP heterostructures with various surface orientations (001), (110), and (111)	Chu, L.-K.; Merckling, C.; Dekoster, J.; Kwo, J.R.; Hong, M.; Caymax, M.; Heyns, M.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:18Z	Self-aligned inversion-channel n-InGaAs, p-GaSb, and p-Ge MOSFETs with a common high 庥 gate dielectric using a CMOS compatible process	Fu, C.H.;Lin, Y.H.;Lee, W.C.;Lin, T.D.;Chu, R.L.;Chu, L.K.;Chang, P.;Chen, M.H.;Hsueh, W.J.;Chen, S.H.;Brown, G.J.;Chyi, J.I.;Kwo, J.;Hong, M.; Fu, C.H.; Lin, Y.H.; Lee, W.C.; Lin, T.D.; Chu, R.L.; Chu, L.K.; Chang, P.; Chen, M.H.; Hsueh, W.J.; Chen, S.H.; Brown, G.J.; Chyi, J.I.; Kwo, J.; Hong, M.; MINGHWEI HONG
臺大學術典藏	2018-09-10T14:52:34Z	Photochemistry of a dual-bacteriorhodopsin system in haloarcula marismortui: HmbRI and HmbRII	Tsai, F.-K.;Fu, H.-Y.;Yang, C.-S.;Chu, L.-K.; Tsai, F.-K.; Fu, H.-Y.; Yang, C.-S.; Chu, L.-K.; CHII-SHEN YANG
國立臺灣大學	2012	Ge metal-oxide-semiconductor devices with Al2O3/Ga2O3(Gd2O3) as gate dielectric	Chu, L.K.; Chiang, T.H.; Lin, T.D.; Lee, Y.J.; Chu, R.L.; Kwo, J.; Hong, M.

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