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Showing items 1-10 of 20 (2 Page(s) Totally)
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| 臺大學術典藏 |
2020-01-06T03:10:32Z |
Synthesis of Methane Hydrate from Ice Powder Accelerated by Doping Ethanol into Methane Gas
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Chen, Y.-A.; Chu, L.-K.; Chu, C.-K.; Ohmura, R.; Chen, L.-J.; LI-JEN CHEN |
| 臺大學術典藏 |
2019-12-27T07:49:45Z |
Depletion-mode GaAs-based MOSFET with Ga 2 O 3 (Gd 2 O 3 ) as a gate dielectric
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Tsai, P.J.; Chu, L.K.; Chen, Y.W.; Chiu, Y.N.; Yang, H.P.; Chang, P.; Kwo, J.; Chi, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:40Z |
Si metal-oxide-semiconductor devices with high 庥 Hf O2 fabricated using a novel MBE template approach followed by atomic layer deposition
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Pan, C.H.;Kwo, J.;Lee, K.Y.;Lee, W.C.;Chu, L.K.;Huang, M.L.;Lee, Y.J.;Hong, M.; Pan, C.H.; Kwo, J.; Lee, K.Y.; Lee, W.C.; Chu, L.K.; Huang, M.L.; Lee, Y.J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:37Z |
Metal-oxide-semiconductor devices with molecular beam epitaxy-grown Y2O3 on Ge
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Chu, L.K.;Lee, W.C.;Huang, M.L.;Chang, Y.H.;Tung, L.T.;Chang, C.C.;Lee, Y.J.;Kwo, J.;Hong, M.; Chu, L.K.; Lee, W.C.; Huang, M.L.; Chang, Y.H.; Tung, L.T.; Chang, C.C.; Lee, Y.J.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:37Z |
Molecular beam epitaxy-grown Al2O3/HfO2 high-庥 dielectrics for germanium
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Lee, W.C.;Chin, B.H.;Chu, L.K.;Lin, T.D.;Lee, Y.J.;Tung, L.T.;Lee, C.H.;Hong, M.;Kwo, J.; Lee, W.C.; Chin, B.H.; Chu, L.K.; Lin, T.D.; Lee, Y.J.; Tung, L.T.; Lee, C.H.; Hong, M.; Kwo, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:36Z |
Ga2O3(Gd2O3) on Ge without interfacial layers: Energy-band parameters and metal oxide semiconductor devices
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Chu, L.K.;Lin, T.D.;Huang, M.L.;Chu, R.L.;Chang, C.C.;Kwo, J.;Hong, M.; Chu, L.K.; Lin, T.D.; Huang, M.L.; Chu, R.L.; Chang, C.C.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:35Z |
High performance Ga2O3(Gd2O 3)/Ge MOS devices without interfacial layers
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Chu, L.K.;Chu, R.L.;Huang, M.L.;Tung, L.T.;Lin, T.D.;Chang, C.C.;Kwo, J.;Hong, M.; Chu, L.K.; Chu, R.L.; Huang, M.L.; Tung, L.T.; Lin, T.D.; Chang, C.C.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:35Z |
Metal-oxide-semiconductor devices with UHV-Ga 2 O 3 (Gd 2 O 3 ) on Ge(100)
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Chu, L.K.;Lin, T.D.;Lee, C.H.;Tung, L.T.;Lee, W.C.;Chu, R.L.;Chang, C.C.;Hong, M.;Kwo, J.; Chu, L.K.; Lin, T.D.; Lee, C.H.; Tung, L.T.; Lee, W.C.; Chu, R.L.; Chang, C.C.; Hong, M.; Kwo, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:33Z |
Effective passivation and high-performance metal-oxide-semiconductor devices using ultra-high-vacuum deposited high-庥 dielectrics on Ge without interfacial layers
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Chu, L.K.;Chu, R.L.;Lin, T.D.;Lee, W.C.;Lin, C.A.;Huang, M.L.;Lee, Y.J.;Kwo, J.;Hong, M.; Chu, L.K.; Chu, R.L.; Lin, T.D.; Lee, W.C.; Lin, C.A.; Huang, M.L.; Lee, Y.J.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:32Z |
Achieving high-performance Ge MOS devices using high-庥 gate dielectrics Ga2O3(Gd2O3) of sub-nm EOT
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Chu, L.K.;Chu, R.L.;Lin, C.A.;Lin, T.D.;Chiang, T.H.;Kwo, J.;Hong, M.; Chu, L.K.; Chu, R.L.; Lin, C.A.; Lin, T.D.; Chiang, T.H.; Kwo, J.; Hong, M.; MINGHWEI HONG |
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