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Showing items 1-23 of 23 (1 Page(s) Totally)
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Institution	Date	Title	Author
臺大學術典藏	2018-09-10T15:21:41Z	Self-aligned inversion-channel n-InGaAs, p-GaSb, and p-Ge MOSFETs with a common high $κ$ gate dielectric using a CMOS compatible process	Fu, CH;Lin, YH;Lee, WC;Lin, TD;Chu, RL;Chu, LK;Chang, P;Chen, MH;Hsueh, WJ;Chen, SH;others; Fu, CH; Lin, YH; Lee, WC; Lin, TD; Chu, RL; Chu, LK; Chang, P; Chen, MH; Hsueh, WJ; Chen, SH; others; MINGHWEI HONG
臺大學術典藏	2018-09-10T15:21:41Z	Self-aligned inversion-channel n-InGaAs, p-GaSb, and p-Ge MOSFETs with a common high $κ$ gate dielectric using a CMOS compatible process	Fu, CH;Lin, YH;Lee, WC;Lin, TD;Chu, RL;Chu, LK;Chang, P;Chen, MH;Hsueh, WJ;Chen, SH;others; Fu, CH; Lin, YH; Lee, WC; Lin, TD; Chu, RL; Chu, LK; Chang, P; Chen, MH; Hsueh, WJ; Chen, SH; others; MINGHWEI HONG
臺大學術典藏	2018-09-10T14:56:28Z	Passivation of GaSb using molecular beam epitaxy Y2O3 to achieve low interfacial trap density and high-performance self-aligned inversion-channel p-metal-oxide-semiconductor field-effect-transistors	MINGHWEI HONG; Hong, M; Kwo, J; Chyi, JI; Brown, GJ; Lin, KY; Chen, KH; Hsueh, WJ; Chiang, TH; Chu, RL; Chu, RL;Chiang, TH;Hsueh, WJ;Chen, KH;Lin, KY;Brown, GJ;Chyi, JI;Kwo, J;Hong, M
臺大學術典藏	2018-09-10T14:56:28Z	Passivation of GaSb using molecular beam epitaxy Y2O3 to achieve low interfacial trap density and high-performance self-aligned inversion-channel p-metal-oxide-semiconductor field-effect-transistors	MINGHWEI HONG; Hong, M; Kwo, J; Chyi, JI; Brown, GJ; Lin, KY; Chen, KH; Hsueh, WJ; Chiang, TH; Chu, RL; Chu, RL;Chiang, TH;Hsueh, WJ;Chen, KH;Lin, KY;Brown, GJ;Chyi, JI;Kwo, J;Hong, M
臺大學術典藏	2018-09-10T14:56:28Z	Greatly improved interfacial passivation of in-situ high $κ$ dielectric deposition on freshly grown molecule beam epitaxy Ge epitaxial layer on Ge (100)	Chu, RL;Liu, YC;Lee, WC;Lin, TD;Huang, ML;Pi, TW;Kwo, J;Hong, M; Chu, RL; Liu, YC; Lee, WC; Lin, TD; Huang, ML; Pi, TW; Kwo, J; Hong, M; MINGHWEI HONG
臺大學術典藏	2018-09-10T14:56:28Z	Greatly improved interfacial passivation of in-situ high $κ$ dielectric deposition on freshly grown molecule beam epitaxy Ge epitaxial layer on Ge (100)	Chu, RL;Liu, YC;Lee, WC;Lin, TD;Huang, ML;Pi, TW;Kwo, J;Hong, M; Chu, RL; Liu, YC; Lee, WC; Lin, TD; Huang, ML; Pi, TW; Kwo, J; Hong, M; MINGHWEI HONG
臺大學術典藏	2018-09-10T09:46:44Z	High-performance self-aligned inversion-channel In0. 53Ga0. 47As metal-oxide-semiconductor field-effect-transistors by in-situ atomic-layer-deposited HfO2	MINGHWEI HONG; Hong, M; Kwo, J; Chen, Min-Cheng; Lee, MY; Hong, PF; Chang, YC; Chang, YH; Lin, TD;Chang, WH;Chu, RL;Chang, YC;Chang, YH;Lee, MY;Hong, PF;Chen, Min-Cheng;Kwo, J;Hong, M; Lin, TD; Chang, WH; Chu, RL
臺大學術典藏	2018-09-10T09:46:44Z	High-performance self-aligned inversion-channel In0. 53Ga0. 47As metal-oxide-semiconductor field-effect-transistors by in-situ atomic-layer-deposited HfO2	MINGHWEI HONG; Hong, M; Kwo, J; Chen, Min-Cheng; Lee, MY; Hong, PF; Chang, YC; Chang, YH; Lin, TD;Chang, WH;Chu, RL;Chang, YC;Chang, YH;Lee, MY;Hong, PF;Chen, Min-Cheng;Kwo, J;Hong, M; Lin, TD; Chang, WH; Chu, RL
臺大學術典藏	2018-09-10T09:20:49Z	Ge metal-oxide-semiconductor devices with Al 2 O 3/Ga 2 O 3 (Gd 2 O 3) as gate dielectric	Chu, LK; Chiang, TH; Lin, TD; Lee, YJ; Chu, RL; Kwo, J; Hong, M; MINGHWEI HONG
臺大學術典藏	2018-09-10T08:12:52Z	High-quality molecular-beam-epitaxy-grown Ga2O3 „Gd2O3… on Ge „100…: Electrical and chemical characterizations	Chu, RL;Lin, TD;Chu, LK;Huang, ML;Chang, CC;Hong, M;Lin, CA;Kwo, J; Chu, RL; Lin, TD; Chu, LK; Huang, ML; Chang, CC; Hong, M; Lin, CA; Kwo, J; MINGHWEI HONG
臺大學術典藏	2018-09-10T08:12:52Z	High-quality molecular-beam-epitaxy-grown Ga2O3 „Gd2O3… on Ge „100…: Electrical and chemical characterizations	Chu, RL;Lin, TD;Chu, LK;Huang, ML;Chang, CC;Hong, M;Lin, CA;Kwo, J; Chu, RL; Lin, TD; Chu, LK; Huang, ML; Chang, CC; Hong, M; Lin, CA; Kwo, J; MINGHWEI HONG
臺大學術典藏	2018-09-10T08:12:52Z	Effective passivation and high-performance metal-oxide-semiconductor devices using ultra-high-vacuum deposited high-$κ$ dielectrics on Ge without interfacial layers	Chu, LK;Chu, RL;Lin, TD;Lee, WC;Lin, CA;Huang, ML;Lee, YJ;Kwo, J;Hong, M; Chu, LK; Chu, RL; Lin, TD; Lee, WC; Lin, CA; Huang, ML; Lee, YJ; Kwo, J; Hong, M; MINGHWEI HONG
臺大學術典藏	2018-09-10T08:12:52Z	Effective passivation and high-performance metal-oxide-semiconductor devices using ultra-high-vacuum deposited high-$κ$ dielectrics on Ge without interfacial layers	Chu, LK;Chu, RL;Lin, TD;Lee, WC;Lin, CA;Huang, ML;Lee, YJ;Kwo, J;Hong, M; Chu, LK; Chu, RL; Lin, TD; Lee, WC; Lin, CA; Huang, ML; Lee, YJ; Kwo, J; Hong, M; MINGHWEI HONG
臺大學術典藏	2018-09-10T08:12:50Z	Achieving high-performance Ge MOS devices using high-к gate dielectrics Ga 2 O 3 (Gd 2 O 3) of sub-nm EOT	Chu, LK;Chu, RL;Lin, CA;Lin, TD;Chiang, TH;Kwo, J;Hong, Mingyi; Chu, LK; Chu, RL; Lin, CA; Lin, TD; Chiang, TH; Kwo, J; Hong, Mingyi; MINGHWEI HONG
臺大學術典藏	2018-09-10T08:12:50Z	Achieving high-performance Ge MOS devices using high-к gate dielectrics Ga 2 O 3 (Gd 2 O 3) of sub-nm EOT	Chu, LK;Chu, RL;Lin, CA;Lin, TD;Chiang, TH;Kwo, J;Hong, Mingyi; Chu, LK; Chu, RL; Lin, CA; Lin, TD; Chiang, TH; Kwo, J; Hong, Mingyi; MINGHWEI HONG
臺大學術典藏	2018-09-10T08:12:49Z	InGaAs and Ge MOSFETs with a common high $κ$ gate dielectric	Lee, WC;Lin, TD;Chu, LK;Chang, P;Chang, YC;Chu, RL;Chiu, HC;Lin, CA;Chang, WH;Chiang, TH;others; Lee, WC; Lin, TD; Chu, LK; Chang, P; Chang, YC; Chu, RL; Chiu, HC; Lin, CA; Chang, WH; Chiang, TH; others; MINGHWEI HONG
臺大學術典藏	2018-09-10T08:12:49Z	InGaAs and Ge MOSFETs with a common high $κ$ gate dielectric	Lee, WC;Lin, TD;Chu, LK;Chang, P;Chang, YC;Chu, RL;Chiu, HC;Lin, CA;Chang, WH;Chiang, TH;others; Lee, WC; Lin, TD; Chu, LK; Chang, P; Chang, YC; Chu, RL; Chiu, HC; Lin, CA; Chang, WH; Chiang, TH; others; MINGHWEI HONG
臺大學術典藏	2018-09-10T07:34:18Z	Ga2O3 (Gd2O3) on Ge without interfacial layers—energy band parameters and metal oxide semiconductor devices	Chu, LK;Lin, TD;Huang, ML;Chu, RL;Chang, CC;Kwo, J;Hong, M; Chu, LK; Lin, TD; Huang, ML; Chu, RL; Chang, CC; Kwo, J; Hong, M; MINGHWEI HONG
臺大學術典藏	2018-09-10T07:34:18Z	Ga2O3 (Gd2O3) on Ge without interfacial layers—energy band parameters and metal oxide semiconductor devices	Chu, LK;Lin, TD;Huang, ML;Chu, RL;Chang, CC;Kwo, J;Hong, M; Chu, LK; Lin, TD; Huang, ML; Chu, RL; Chang, CC; Kwo, J; Hong, M; MINGHWEI HONG
臺大學術典藏	2018-09-10T07:34:12Z	High performance Ga 2 O 3 (Gd 2 O 3)/Ge MOS devices without interfacial layers	Chu, LK;Chu, RL;Huang, ML;Tung, LT;Lin, TD;Chang, CC;Kwo, J;Hong, M; Chu, LK; Chu, RL; Huang, ML; Tung, LT; Lin, TD; Chang, CC; Kwo, J; Hong, M; MINGHWEI HONG
臺大學術典藏	2018-09-10T07:34:12Z	High performance Ga 2 O 3 (Gd 2 O 3)/Ge MOS devices without interfacial layers	Chu, LK;Chu, RL;Huang, ML;Tung, LT;Lin, TD;Chang, CC;Kwo, J;Hong, M; Chu, LK; Chu, RL; Huang, ML; Tung, LT; Lin, TD; Chang, CC; Kwo, J; Hong, M; MINGHWEI HONG
臺大學術典藏	2018-09-10T07:34:12Z	Metal-oxide-semiconductor devices with UHV-Ga 2 O 3 (Gd 2 O 3) on Ge (100)	Chu, LK;Lin, TD;Lee, CH;Tung, LT;Lee, WC;Chu, RL;Chang, CC;Hong, Mingyi;Kwo, J; Chu, LK; Lin, TD; Lee, CH; Tung, LT; Lee, WC; Chu, RL; Chang, CC; Hong, Mingyi; Kwo, J; MINGHWEI HONG
臺大學術典藏	2018-09-10T07:34:12Z	Metal-oxide-semiconductor devices with UHV-Ga 2 O 3 (Gd 2 O 3) on Ge (100)	Chu, LK;Lin, TD;Lee, CH;Tung, LT;Lee, WC;Chu, RL;Chang, CC;Hong, Mingyi;Kwo, J; Chu, LK; Lin, TD; Lee, CH; Tung, LT; Lee, WC; Chu, RL; Chang, CC; Hong, Mingyi; Kwo, J; MINGHWEI HONG

Showing items 1-23 of 23 (1 Page(s) Totally)
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