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Showing items 11-23 of 23 (1 Page(s) Totally)
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| 臺大學術典藏 |
2018-09-10T08:12:52Z |
High-quality molecular-beam-epitaxy-grown Ga2O3 „Gd2O3… on Ge „100…: Electrical and chemical characterizations
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Chu, RL;Lin, TD;Chu, LK;Huang, ML;Chang, CC;Hong, M;Lin, CA;Kwo, J; Chu, RL; Lin, TD; Chu, LK; Huang, ML; Chang, CC; Hong, M; Lin, CA; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:12:52Z |
Effective passivation and high-performance metal-oxide-semiconductor devices using ultra-high-vacuum deposited high-$κ$ dielectrics on Ge without interfacial layers
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Chu, LK;Chu, RL;Lin, TD;Lee, WC;Lin, CA;Huang, ML;Lee, YJ;Kwo, J;Hong, M; Chu, LK; Chu, RL; Lin, TD; Lee, WC; Lin, CA; Huang, ML; Lee, YJ; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:12:52Z |
Effective passivation and high-performance metal-oxide-semiconductor devices using ultra-high-vacuum deposited high-$κ$ dielectrics on Ge without interfacial layers
|
Chu, LK;Chu, RL;Lin, TD;Lee, WC;Lin, CA;Huang, ML;Lee, YJ;Kwo, J;Hong, M; Chu, LK; Chu, RL; Lin, TD; Lee, WC; Lin, CA; Huang, ML; Lee, YJ; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:12:50Z |
Achieving high-performance Ge MOS devices using high-к gate dielectrics Ga 2 O 3 (Gd 2 O 3) of sub-nm EOT
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Chu, LK;Chu, RL;Lin, CA;Lin, TD;Chiang, TH;Kwo, J;Hong, Mingyi; Chu, LK; Chu, RL; Lin, CA; Lin, TD; Chiang, TH; Kwo, J; Hong, Mingyi; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:12:50Z |
Achieving high-performance Ge MOS devices using high-к gate dielectrics Ga 2 O 3 (Gd 2 O 3) of sub-nm EOT
|
Chu, LK;Chu, RL;Lin, CA;Lin, TD;Chiang, TH;Kwo, J;Hong, Mingyi; Chu, LK; Chu, RL; Lin, CA; Lin, TD; Chiang, TH; Kwo, J; Hong, Mingyi; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:12:49Z |
InGaAs and Ge MOSFETs with a common high $κ$ gate dielectric
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Lee, WC;Lin, TD;Chu, LK;Chang, P;Chang, YC;Chu, RL;Chiu, HC;Lin, CA;Chang, WH;Chiang, TH;others; Lee, WC; Lin, TD; Chu, LK; Chang, P; Chang, YC; Chu, RL; Chiu, HC; Lin, CA; Chang, WH; Chiang, TH; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:12:49Z |
InGaAs and Ge MOSFETs with a common high $κ$ gate dielectric
|
Lee, WC;Lin, TD;Chu, LK;Chang, P;Chang, YC;Chu, RL;Chiu, HC;Lin, CA;Chang, WH;Chiang, TH;others; Lee, WC; Lin, TD; Chu, LK; Chang, P; Chang, YC; Chu, RL; Chiu, HC; Lin, CA; Chang, WH; Chiang, TH; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:18Z |
Ga2O3 (Gd2O3) on Ge without interfacial layers—energy band parameters and metal oxide semiconductor devices
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Chu, LK;Lin, TD;Huang, ML;Chu, RL;Chang, CC;Kwo, J;Hong, M; Chu, LK; Lin, TD; Huang, ML; Chu, RL; Chang, CC; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:18Z |
Ga2O3 (Gd2O3) on Ge without interfacial layers—energy band parameters and metal oxide semiconductor devices
|
Chu, LK;Lin, TD;Huang, ML;Chu, RL;Chang, CC;Kwo, J;Hong, M; Chu, LK; Lin, TD; Huang, ML; Chu, RL; Chang, CC; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:12Z |
High performance Ga 2 O 3 (Gd 2 O 3)/Ge MOS devices without interfacial layers
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Chu, LK;Chu, RL;Huang, ML;Tung, LT;Lin, TD;Chang, CC;Kwo, J;Hong, M; Chu, LK; Chu, RL; Huang, ML; Tung, LT; Lin, TD; Chang, CC; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:12Z |
High performance Ga 2 O 3 (Gd 2 O 3)/Ge MOS devices without interfacial layers
|
Chu, LK;Chu, RL;Huang, ML;Tung, LT;Lin, TD;Chang, CC;Kwo, J;Hong, M; Chu, LK; Chu, RL; Huang, ML; Tung, LT; Lin, TD; Chang, CC; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:12Z |
Metal-oxide-semiconductor devices with UHV-Ga 2 O 3 (Gd 2 O 3) on Ge (100)
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Chu, LK;Lin, TD;Lee, CH;Tung, LT;Lee, WC;Chu, RL;Chang, CC;Hong, Mingyi;Kwo, J; Chu, LK; Lin, TD; Lee, CH; Tung, LT; Lee, WC; Chu, RL; Chang, CC; Hong, Mingyi; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:12Z |
Metal-oxide-semiconductor devices with UHV-Ga 2 O 3 (Gd 2 O 3) on Ge (100)
|
Chu, LK;Lin, TD;Lee, CH;Tung, LT;Lee, WC;Chu, RL;Chang, CC;Hong, Mingyi;Kwo, J; Chu, LK; Lin, TD; Lee, CH; Tung, LT; Lee, WC; Chu, RL; Chang, CC; Hong, Mingyi; Kwo, J; MINGHWEI HONG |
Showing items 11-23 of 23 (1 Page(s) Totally)
1
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