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Showing items 21-23 of 23 (1 Page(s) Totally)
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| 臺大學術典藏 |
2018-09-10T07:34:12Z |
High performance Ga 2 O 3 (Gd 2 O 3)/Ge MOS devices without interfacial layers
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Chu, LK;Chu, RL;Huang, ML;Tung, LT;Lin, TD;Chang, CC;Kwo, J;Hong, M; Chu, LK; Chu, RL; Huang, ML; Tung, LT; Lin, TD; Chang, CC; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:12Z |
Metal-oxide-semiconductor devices with UHV-Ga 2 O 3 (Gd 2 O 3) on Ge (100)
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Chu, LK;Lin, TD;Lee, CH;Tung, LT;Lee, WC;Chu, RL;Chang, CC;Hong, Mingyi;Kwo, J; Chu, LK; Lin, TD; Lee, CH; Tung, LT; Lee, WC; Chu, RL; Chang, CC; Hong, Mingyi; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:12Z |
Metal-oxide-semiconductor devices with UHV-Ga 2 O 3 (Gd 2 O 3) on Ge (100)
|
Chu, LK;Lin, TD;Lee, CH;Tung, LT;Lee, WC;Chu, RL;Chang, CC;Hong, Mingyi;Kwo, J; Chu, LK; Lin, TD; Lee, CH; Tung, LT; Lee, WC; Chu, RL; Chang, CC; Hong, Mingyi; Kwo, J; MINGHWEI HONG |
Showing items 21-23 of 23 (1 Page(s) Totally)
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