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Showing items 1-50 of 55 (2 Page(s) Totally)
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| 臺大學術典藏 |
2018-09-10T07:34:17Z |
GaN metal oxide semiconductor field effect transistors
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Ren, F; Pearton, SJ; Abernathy, CR; Baca, A; Cheng, P; Shul, RJ; Chu, SNG; Hong, M; Schurman, MJ; Lothian, JR; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:25Z |
Ga 2 O 3 (Gd 2 O 3)/InGaAs enhancement-mode n-channel MOSFETs
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Ren, F; Kuo, JM; Hong, M; Hobson, WS; Lothian, JR; Lin, J; Tsai, HS; Mannaerts, JP; Kwo, J; Chu, SNG; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:25Z |
Effect of temperature on Ga2O3 (Gd2O3)/GaN metal-oxide-semiconductor field-effect transistors
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Ren, F; Hong, M; Chu, SNG; Marcus, MA; Schurman, MJ; Baca, A; Pearton, SJ; Abernathy, CR; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:16Z |
Effect of Temperature on GaGdO/GaN Metal Oxide Semiconductor Field Effect Transistors; Applied Physics Letters
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Abernathy, CR; Baca, A; Chu, SNG; Hong, M; Lothian, JR; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:14Z |
Effect of Temperature on GaGdO/GaN Metal Oxide Semiconductor Field Effect Transistors
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Abernathy, CR; Baca, A; Chu, SNG; Hong, M; Lothian, JR; Marcus, MA; Pearton, SJ; Ren, F; Schurman, MJ; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T06:28:22Z |
Demonstration of enhancement-mode p-and n-channel GaAs MOSFETS with Ga 2 O 3 (Gd 2 O 3) As gate oxide
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Ren, F; Hong, M; Hobson, WS; Kuo, JM; Lothian, JR; Mannaerts, JP; Kwo, J; Chu, SNG; Chen, YK; Cho, AY; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T06:28:19Z |
III-V compound semiconductor MOSFETs using Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) as gate dielectric
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Ren, F; Hong, M; Kuo, JM; Hobson, WS; Lothian, JR; Tsai, HS; Lin, J; Mannaerts, JP; Kwo, J; Chu, SNG; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T06:28:13Z |
Low D it, thermodynamically stable Ga 2 O 3-GaAs interfaces: fabrication, characterization, and modeling
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Passlack, M; Hong, M; Mannaerts, JP; Opila, RL; Chu, SNG; Moriya, N; Ren, F; Kwo, JR; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:56:12Z |
Low interface state density oxide-GaAs structures fabricated by insitu molecular beam epitaxy
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Hong, M; Passlack, M; Mannaerts, JP; Kwo, J; Chu, SNG; Moriya, N; Hou, SY; Fratello, VJ; MINGHWEI HONG; Hong, M;Passlack, M;Mannaerts, JP;Kwo, J;Chu, SNG;Moriya, N;Hou, SY;Fratello, VJ |
| 臺大學術典藏 |
2018-09-10T05:56:12Z |
Low interface state density oxide-GaAs structures fabricated by insitu molecular beam epitaxy
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Hong, M; Passlack, M; Mannaerts, JP; Kwo, J; Chu, SNG; Moriya, N; Hou, SY; Fratello, VJ; MINGHWEI HONG; Hong, M;Passlack, M;Mannaerts, JP;Kwo, J;Chu, SNG;Moriya, N;Hou, SY;Fratello, VJ |
| 臺大學術典藏 |
2018-09-10T05:21:12Z |
In-situ Ga 2 O 3 process for GaAs inversion/accumulation device and surface passivation applications
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Passlack, Matthias;Hong, Minghwei;Mannaerts, Joseph P;Chu, SNG;Opila, Robert L;Moriya, Netzer; Passlack, Matthias; Hong, Minghwei; Mannaerts, Joseph P; Chu, SNG; Opila, Robert L; Moriya, Netzer; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:21:12Z |
In-situ Ga 2 O 3 process for GaAs inversion/accumulation device and surface passivation applications
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Passlack, Matthias;Hong, Minghwei;Mannaerts, Joseph P;Chu, SNG;Opila, Robert L;Moriya, Netzer; Passlack, Matthias; Hong, Minghwei; Mannaerts, Joseph P; Chu, SNG; Opila, Robert L; Moriya, Netzer; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:21:12Z |
In situ fabricated Ga2O3-GaAs structures with low interface recombination velocity
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Kwo, JR; Mannaerts, JP; Chu, SNG; Moriya, N; Thiel, FA; MINGHWEI HONG; Schubert, EF; Passlack, M;Hong, M;Schubert, EF;Kwo, JR;Mannaerts, JP;Chu, SNG;Moriya, N;Thiel, FA; Passlack, M; Hong, M |
| 臺大學術典藏 |
2018-09-10T05:21:12Z |
In situ fabricated Ga2O3-GaAs structures with low interface recombination velocity
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Kwo, JR; Mannaerts, JP; Chu, SNG; Moriya, N; Thiel, FA; MINGHWEI HONG; Schubert, EF; Passlack, M;Hong, M;Schubert, EF;Kwo, JR;Mannaerts, JP;Chu, SNG;Moriya, N;Thiel, FA; Passlack, M; Hong, M |
| 臺大學術典藏 |
2018-09-10T05:21:12Z |
Ga2O3 films for electronic and optoelectronic applications
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Passlack, M; Schubert, EF; Hobson, WS; Hong, M; Moriya, N; Chu, SNG; Konstadinidis, K; Mannaerts, JP; Schnoes, ML; Zydzik, GJ; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:21:10Z |
Ga203 films for electronic and optoelectronic ap
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Passlack, M;Schubert, EF;Hobson, WS;Hong, M;Moriya, N;Chu, SNG;Konstadinidis, K;Mannaerts, JP;Schnoes, ML;Zydzik, GJ; Passlack, M; Schubert, EF; Hobson, WS; Hong, M; Moriya, N; Chu, SNG; Konstadinidis, K; Mannaerts, JP; Schnoes, ML; Zydzik, GJ; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:21:10Z |
Ga203 films for electronic and optoelectronic ap
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Passlack, M;Schubert, EF;Hobson, WS;Hong, M;Moriya, N;Chu, SNG;Konstadinidis, K;Mannaerts, JP;Schnoes, ML;Zydzik, GJ; Passlack, M; Schubert, EF; Hobson, WS; Hong, M; Moriya, N; Chu, SNG; Konstadinidis, K; Mannaerts, JP; Schnoes, ML; Zydzik, GJ; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:51:57Z |
In-situ process for AlGaAs compound semiconductor: Materials science and device fabrication
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Hong, M;Choquette, KD;Mannaerts, JP;Grober, LH;Freund, RS;Vakhshoori, D;Chu, SNG;Luftman, HS;Wetzel, RC; Hong, M; Choquette, KD; Mannaerts, JP; Grober, LH; Freund, RS; Vakhshoori, D; Chu, SNG; Luftman, HS; Wetzel, RC; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:51:57Z |
In-situ process for AlGaAs compound semiconductor: Materials science and device fabrication
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Hong, M;Choquette, KD;Mannaerts, JP;Grober, LH;Freund, RS;Vakhshoori, D;Chu, SNG;Luftman, HS;Wetzel, RC; Hong, M; Choquette, KD; Mannaerts, JP; Grober, LH; Freund, RS; Vakhshoori, D; Chu, SNG; Luftman, HS; Wetzel, RC; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:51:57Z |
Interfacial characteristics of AlGaAs after insitu electron cyclotron resonance plasma etching and molecular beam epitaxial regrowth
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Hong, M;Mannaerts, JP;Grober, L;Chu, SNG;Luftman, HS;Choquette, KD;Freund, RS; Hong, M; Mannaerts, JP; Grober, L; Chu, SNG; Luftman, HS; Choquette, KD; Freund, RS; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:51:57Z |
Interfacial characteristics of AlGaAs after insitu electron cyclotron resonance plasma etching and molecular beam epitaxial regrowth
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Hong, M;Mannaerts, JP;Grober, L;Chu, SNG;Luftman, HS;Choquette, KD;Freund, RS; Hong, M; Mannaerts, JP; Grober, L; Chu, SNG; Luftman, HS; Choquette, KD; Freund, RS; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:51:56Z |
Interface analysis of dry etched and molecular beam epitaxial regrown AlGaAs
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Grober, LH; Hong, M; Mannaerts, JP; Freund, RS; Luftman, HS; Chu, SNG; MINGHWEI HONG; Grober, LH;Hong, M;Mannaerts, JP;Freund, RS;Luftman, HS;Chu, SNG |
| 臺大學術典藏 |
2018-09-10T04:51:56Z |
Interface analysis of dry etched and molecular beam epitaxial regrown AlGaAs
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Grober, LH; Hong, M; Mannaerts, JP; Freund, RS; Luftman, HS; Chu, SNG; MINGHWEI HONG; Grober, LH;Hong, M;Mannaerts, JP;Freund, RS;Luftman, HS;Chu, SNG |
| 臺大學術典藏 |
2018-09-10T04:31:35Z |
GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition
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Ye, PD;Wilk, GD;Kwo, J;Yang, BAYB;Gossmann, H-JL;Frei, MAFM;Chu, SNG;Mannaerts, JP;Sergent, MASM;Hong, MAHM;others; Ye, PD; Wilk, GD; Kwo, J; Yang, BAYB; Gossmann, H-JL; Frei, MAFM; Chu, SNG; Mannaerts, JP; Sergent, MASM; Hong, MAHM; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:35Z |
GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition
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Ye, PD;Wilk, GD;Kwo, J;Yang, BAYB;Gossmann, H-JL;Frei, MAFM;Chu, SNG;Mannaerts, JP;Sergent, MASM;Hong, MAHM;others; Ye, PD; Wilk, GD; Kwo, J; Yang, BAYB; Gossmann, H-JL; Frei, MAFM; Chu, SNG; Mannaerts, JP; Sergent, MASM; Hong, MAHM; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:35Z |
GaAs metal-oxide-semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition
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MINGHWEI HONG; Mannaerts, JP; Hong, M; Ng, KK; others; Ye, PD;Wilk, GD;Yang, B;Kwo, J;Chu, SNG;Nakahara, S;Gossmann, HJL;Mannaerts, JP;Hong, M;Ng, KK;others; Ye, PD; Wilk, GD; Yang, B; Kwo, J; Chu, SNG; Nakahara, S; Gossmann, HJL |
| 臺大學術典藏 |
2018-09-10T04:31:35Z |
GaAs metal-oxide-semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition
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MINGHWEI HONG; Mannaerts, JP; Hong, M; Ng, KK; others; Ye, PD;Wilk, GD;Yang, B;Kwo, J;Chu, SNG;Nakahara, S;Gossmann, HJL;Mannaerts, JP;Hong, M;Ng, KK;others; Ye, PD; Wilk, GD; Yang, B; Kwo, J; Chu, SNG; Nakahara, S; Gossmann, HJL |
| 臺大學術典藏 |
2018-09-10T04:31:33Z |
GaAs-based MOSFETs with Al/sub 2/O/sub 3/gate dielectrics grown by atomic layer deposition
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Ye, PD;Wilk, GD;Yang, B;Kwo, J;Gossmann, H-JL;Frei, M;Chu, SNG;Nakahara, S;Mannaerts, JP;Sergent, M;others; Ye, PD; Wilk, GD; Yang, B; Kwo, J; Gossmann, H-JL; Frei, M; Chu, SNG; Nakahara, S; Mannaerts, JP; Sergent, M; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:33Z |
GaAs-based MOSFETs with Al/sub 2/O/sub 3/gate dielectrics grown by atomic layer deposition
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Ye, PD;Wilk, GD;Yang, B;Kwo, J;Gossmann, H-JL;Frei, M;Chu, SNG;Nakahara, S;Mannaerts, JP;Sergent, M;others; Ye, PD; Wilk, GD; Yang, B; Kwo, J; Gossmann, H-JL; Frei, M; Chu, SNG; Nakahara, S; Mannaerts, JP; Sergent, M; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:32Z |
Hydrogen plasma processing of GaAs and AlGaAs
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Choquette, Kent D;Freund, RS;Hong, M;Luftman, HS;Chu, SNG;Mannaerts, JP;Wetzel, RC; Choquette, Kent D; Freund, RS; Hong, M; Luftman, HS; Chu, SNG; Mannaerts, JP; Wetzel, RC; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:32Z |
Hydrogen plasma processing of GaAs and AlGaAs
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Choquette, Kent D;Freund, RS;Hong, M;Luftman, HS;Chu, SNG;Mannaerts, JP;Wetzel, RC; Choquette, Kent D; Freund, RS; Hong, M; Luftman, HS; Chu, SNG; Mannaerts, JP; Wetzel, RC; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:32Z |
GaAs surface reconstruction obtained using a dry process
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Choquette, Kent D;Hong, M;Luftman, HS;Chu, SNG;Mannaerts, JP;Wetzel, RC;Freund, RS; Choquette, Kent D; Hong, M; Luftman, HS; Chu, SNG; Mannaerts, JP; Wetzel, RC; Freund, RS; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:32Z |
GaAs surface reconstruction obtained using a dry process
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Choquette, Kent D;Hong, M;Luftman, HS;Chu, SNG;Mannaerts, JP;Wetzel, RC;Freund, RS; Choquette, Kent D; Hong, M; Luftman, HS; Chu, SNG; Mannaerts, JP; Wetzel, RC; Freund, RS; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:32Z |
Hydrogen plasma removal of AlGaAs oxides before molecular beam epitaxy
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Choquette, Kent D;Hong, M;Chu, SNG;Luftman, HS;Mannaerts, JP;Wetzel, RC;Freund, RS; Choquette, Kent D; Hong, M; Chu, SNG; Luftman, HS; Mannaerts, JP; Wetzel, RC; Freund, RS; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:32Z |
Hydrogen plasma removal of AlGaAs oxides before molecular beam epitaxy
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Choquette, Kent D;Hong, M;Chu, SNG;Luftman, HS;Mannaerts, JP;Wetzel, RC;Freund, RS; Choquette, Kent D; Hong, M; Chu, SNG; Luftman, HS; Mannaerts, JP; Wetzel, RC; Freund, RS; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:31Z |
Vacuum integrated fabrication of vertical-cavity surface emitting lasers
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Choquette, Kent D;Hong, M;Freund, RS;Chu, SNG;Wetzel, RC;Mannaerts, JP;Leibenguth, RE; Choquette, Kent D; Hong, M; Freund, RS; Chu, SNG; Wetzel, RC; Mannaerts, JP; Leibenguth, RE; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:31Z |
Vacuum integrated fabrication of vertical-cavity surface emitting lasers
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Choquette, Kent D;Hong, M;Freund, RS;Chu, SNG;Wetzel, RC;Mannaerts, JP;Leibenguth, RE; Choquette, Kent D; Hong, M; Freund, RS; Chu, SNG; Wetzel, RC; Mannaerts, JP; Leibenguth, RE; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:31Z |
Vacuum Integrated Fabrication of Buried Heterostructure Edge Emitting Laser Diodes
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Hong, M;Vahkshoori, D;Grober, LH;Mannaerts, JP;Chu, SNG;Wynn, JD;Freund, RS; Hong, M; Vahkshoori, D; Grober, LH; Mannaerts, JP; Chu, SNG; Wynn, JD; Freund, RS; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:31Z |
Vacuum Integrated Fabrication of Buried Heterostructure Edge Emitting Laser Diodes
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Hong, M;Vahkshoori, D;Grober, LH;Mannaerts, JP;Chu, SNG;Wynn, JD;Freund, RS; Hong, M; Vahkshoori, D; Grober, LH; Mannaerts, JP; Chu, SNG; Wynn, JD; Freund, RS; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:30Z |
Buried AlGaAs/GaAs/InGaAs laser diodes fabricated by in-situ anisotropic etching and molecular beam epitaxy
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Vakhshoori, D;Hong, M;Grober, LH;Mannaerts, JP;Chu, SNG;Wynn, JD;Freund, RS; Vakhshoori, D; Hong, M; Grober, LH; Mannaerts, JP; Chu, SNG; Wynn, JD; Freund, RS; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:30Z |
Buried AlGaAs/GaAs/InGaAs laser diodes fabricated by in-situ anisotropic etching and molecular beam epitaxy
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Vakhshoori, D;Hong, M;Grober, LH;Mannaerts, JP;Chu, SNG;Wynn, JD;Freund, RS; Vakhshoori, D; Hong, M; Grober, LH; Mannaerts, JP; Chu, SNG; Wynn, JD; Freund, RS; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:11:35Z |
Single-crystal GaN/Gd2O3/GaN heterostructure
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MINGHWEI HONG; Lee, CM; Chyi, JI; Anselm, KA; Cho, AY; Ng, HM; Kortan, AR; Mannaerts, JP; Chu, SNG; Kwo, J; Hong, M;Kwo, J;Chu, SNG;Mannaerts, JP;Kortan, AR;Ng, HM;Cho, AY;Anselm, KA;Lee, CM;Chyi, JI; Hong, M |
| 臺大學術典藏 |
2018-09-10T04:11:35Z |
Single-crystal GaN/Gd2O3/GaN heterostructure
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MINGHWEI HONG; Lee, CM; Chyi, JI; Anselm, KA; Cho, AY; Ng, HM; Kortan, AR; Mannaerts, JP; Chu, SNG; Kwo, J; Hong, M;Kwo, J;Chu, SNG;Mannaerts, JP;Kortan, AR;Ng, HM;Cho, AY;Anselm, KA;Lee, CM;Chyi, JI; Hong, M |
| 臺大學術典藏 |
2018-09-10T04:11:34Z |
Periodic index separate confinement heterostructure InGaAs/AlGaAs quantum well lasers grown by temperature modulation molecular beam epitaxy
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Hong, M;Chen, YK;Wu, MC;V;enberg, JM;Chu, SNG;Mannaerts, JP;Chin, MA; Hong, M; Chen, YK; Wu, MC; V; enberg, JM; Chu, SNG; Mannaerts, JP; Chin, MA; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:11:34Z |
Periodic index separate confinement heterostructure InGaAs/AlGaAs quantum well lasers grown by temperature modulation molecular beam epitaxy
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Hong, M;Chen, YK;Wu, MC;V;enberg, JM;Chu, SNG;Mannaerts, JP;Chin, MA; Hong, M; Chen, YK; Wu, MC; V; enberg, JM; Chu, SNG; Mannaerts, JP; Chin, MA; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:11:32Z |
GaN/Gd2O3/GaN Single Crystal Heterostructure
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Hong, M;Kwo, J;Chu, SNG;Mannaerts, JP;Kortan, AR;Ng, HM;Cho, AY;Anselm, KA;Lee, CM;Chyi, JI; Hong, M; Kwo, J; Chu, SNG; Mannaerts, JP; Kortan, AR; Ng, HM; Cho, AY; Anselm, KA; Lee, CM; Chyi, JI; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:11:32Z |
GaN/Gd2O3/GaN Single Crystal Heterostructure
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Hong, M;Kwo, J;Chu, SNG;Mannaerts, JP;Kortan, AR;Ng, HM;Cho, AY;Anselm, KA;Lee, CM;Chyi, JI; Hong, M; Kwo, J; Chu, SNG; Mannaerts, JP; Kortan, AR; Ng, HM; Cho, AY; Anselm, KA; Lee, CM; Chyi, JI; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:11:31Z |
Molecular beam epitaxial regrowth on insitu plasma-etched AlAs/AlGaAs heterostructures
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Choquette, Kent D;Hong, M;Freund, RS;Chu, SNG;Mannaerts, JP;Wetzel, RC;Leibenguth, RE; Choquette, Kent D; Hong, M; Freund, RS; Chu, SNG; Mannaerts, JP; Wetzel, RC; Leibenguth, RE; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:11:31Z |
Molecular beam epitaxial regrowth on insitu plasma-etched AlAs/AlGaAs heterostructures
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Choquette, Kent D;Hong, M;Freund, RS;Chu, SNG;Mannaerts, JP;Wetzel, RC;Leibenguth, RE; Choquette, Kent D; Hong, M; Freund, RS; Chu, SNG; Mannaerts, JP; Wetzel, RC; Leibenguth, RE; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:46:47Z |
Properties of high k gate dielectrics Gd2O3 and Y2O3 for Si
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MINGHWEI HONG; others; Lay, TS; Sapjeta, BJ; Chu, SNG; Muller, DA; Opila, RL; Chabal, YJ; Kwo, J;Hong, M;Kortan, AR;Queeney, KL;Chabal, YJ;Opila, RL;Muller, DA;Chu, SNG;Sapjeta, BJ;Lay, TS;others; Kwo, J; Hong, M; Kortan, AR; Queeney, KL |
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