臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)

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	2019臺灣學術機構典藏研討會
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Institution	Date	Title	Author
臺大學術典藏	2018-09-10T05:21:12Z	In-situ Ga 2 O 3 process for GaAs inversion/accumulation device and surface passivation applications	Passlack, Matthias;Hong, Minghwei;Mannaerts, Joseph P;Chu, SNG;Opila, Robert L;Moriya, Netzer; Passlack, Matthias; Hong, Minghwei; Mannaerts, Joseph P; Chu, SNG; Opila, Robert L; Moriya, Netzer; MINGHWEI HONG
臺大學術典藏	2018-09-10T05:21:12Z	In-situ Ga 2 O 3 process for GaAs inversion/accumulation device and surface passivation applications	Passlack, Matthias;Hong, Minghwei;Mannaerts, Joseph P;Chu, SNG;Opila, Robert L;Moriya, Netzer; Passlack, Matthias; Hong, Minghwei; Mannaerts, Joseph P; Chu, SNG; Opila, Robert L; Moriya, Netzer; MINGHWEI HONG
臺大學術典藏	2018-09-10T05:21:12Z	In situ fabricated Ga2O3-GaAs structures with low interface recombination velocity	Kwo, JR; Mannaerts, JP; Chu, SNG; Moriya, N; Thiel, FA; MINGHWEI HONG; Schubert, EF; Passlack, M;Hong, M;Schubert, EF;Kwo, JR;Mannaerts, JP;Chu, SNG;Moriya, N;Thiel, FA; Passlack, M; Hong, M
臺大學術典藏	2018-09-10T05:21:12Z	In situ fabricated Ga2O3-GaAs structures with low interface recombination velocity	Kwo, JR; Mannaerts, JP; Chu, SNG; Moriya, N; Thiel, FA; MINGHWEI HONG; Schubert, EF; Passlack, M;Hong, M;Schubert, EF;Kwo, JR;Mannaerts, JP;Chu, SNG;Moriya, N;Thiel, FA; Passlack, M; Hong, M
臺大學術典藏	2018-09-10T05:21:12Z	Ga2O3 films for electronic and optoelectronic applications	Passlack, M; Schubert, EF; Hobson, WS; Hong, M; Moriya, N; Chu, SNG; Konstadinidis, K; Mannaerts, JP; Schnoes, ML; Zydzik, GJ; MINGHWEI HONG
臺大學術典藏	2018-09-10T05:21:10Z	Ga203 films for electronic and optoelectronic ap	Passlack, M;Schubert, EF;Hobson, WS;Hong, M;Moriya, N;Chu, SNG;Konstadinidis, K;Mannaerts, JP;Schnoes, ML;Zydzik, GJ; Passlack, M; Schubert, EF; Hobson, WS; Hong, M; Moriya, N; Chu, SNG; Konstadinidis, K; Mannaerts, JP; Schnoes, ML; Zydzik, GJ; MINGHWEI HONG
臺大學術典藏	2018-09-10T05:21:10Z	Ga203 films for electronic and optoelectronic ap	Passlack, M;Schubert, EF;Hobson, WS;Hong, M;Moriya, N;Chu, SNG;Konstadinidis, K;Mannaerts, JP;Schnoes, ML;Zydzik, GJ; Passlack, M; Schubert, EF; Hobson, WS; Hong, M; Moriya, N; Chu, SNG; Konstadinidis, K; Mannaerts, JP; Schnoes, ML; Zydzik, GJ; MINGHWEI HONG
臺大學術典藏	2018-09-10T04:51:57Z	In-situ process for AlGaAs compound semiconductor: Materials science and device fabrication	Hong, M;Choquette, KD;Mannaerts, JP;Grober, LH;Freund, RS;Vakhshoori, D;Chu, SNG;Luftman, HS;Wetzel, RC; Hong, M; Choquette, KD; Mannaerts, JP; Grober, LH; Freund, RS; Vakhshoori, D; Chu, SNG; Luftman, HS; Wetzel, RC; MINGHWEI HONG
臺大學術典藏	2018-09-10T04:51:57Z	In-situ process for AlGaAs compound semiconductor: Materials science and device fabrication	Hong, M;Choquette, KD;Mannaerts, JP;Grober, LH;Freund, RS;Vakhshoori, D;Chu, SNG;Luftman, HS;Wetzel, RC; Hong, M; Choquette, KD; Mannaerts, JP; Grober, LH; Freund, RS; Vakhshoori, D; Chu, SNG; Luftman, HS; Wetzel, RC; MINGHWEI HONG
臺大學術典藏	2018-09-10T04:51:57Z	Interfacial characteristics of AlGaAs after insitu electron cyclotron resonance plasma etching and molecular beam epitaxial regrowth	Hong, M;Mannaerts, JP;Grober, L;Chu, SNG;Luftman, HS;Choquette, KD;Freund, RS; Hong, M; Mannaerts, JP; Grober, L; Chu, SNG; Luftman, HS; Choquette, KD; Freund, RS; MINGHWEI HONG
臺大學術典藏	2018-09-10T04:51:57Z	Interfacial characteristics of AlGaAs after insitu electron cyclotron resonance plasma etching and molecular beam epitaxial regrowth	Hong, M;Mannaerts, JP;Grober, L;Chu, SNG;Luftman, HS;Choquette, KD;Freund, RS; Hong, M; Mannaerts, JP; Grober, L; Chu, SNG; Luftman, HS; Choquette, KD; Freund, RS; MINGHWEI HONG
臺大學術典藏	2018-09-10T04:51:56Z	Interface analysis of dry etched and molecular beam epitaxial regrown AlGaAs	Grober, LH; Hong, M; Mannaerts, JP; Freund, RS; Luftman, HS; Chu, SNG; MINGHWEI HONG; Grober, LH;Hong, M;Mannaerts, JP;Freund, RS;Luftman, HS;Chu, SNG
臺大學術典藏	2018-09-10T04:51:56Z	Interface analysis of dry etched and molecular beam epitaxial regrown AlGaAs	Grober, LH; Hong, M; Mannaerts, JP; Freund, RS; Luftman, HS; Chu, SNG; MINGHWEI HONG; Grober, LH;Hong, M;Mannaerts, JP;Freund, RS;Luftman, HS;Chu, SNG
臺大學術典藏	2018-09-10T04:31:35Z	GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition	Ye, PD;Wilk, GD;Kwo, J;Yang, BAYB;Gossmann, H-JL;Frei, MAFM;Chu, SNG;Mannaerts, JP;Sergent, MASM;Hong, MAHM;others; Ye, PD; Wilk, GD; Kwo, J; Yang, BAYB; Gossmann, H-JL; Frei, MAFM; Chu, SNG; Mannaerts, JP; Sergent, MASM; Hong, MAHM; others; MINGHWEI HONG
臺大學術典藏	2018-09-10T04:31:35Z	GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition	Ye, PD;Wilk, GD;Kwo, J;Yang, BAYB;Gossmann, H-JL;Frei, MAFM;Chu, SNG;Mannaerts, JP;Sergent, MASM;Hong, MAHM;others; Ye, PD; Wilk, GD; Kwo, J; Yang, BAYB; Gossmann, H-JL; Frei, MAFM; Chu, SNG; Mannaerts, JP; Sergent, MASM; Hong, MAHM; others; MINGHWEI HONG
臺大學術典藏	2018-09-10T04:31:35Z	GaAs metal-oxide-semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition	MINGHWEI HONG; Mannaerts, JP; Hong, M; Ng, KK; others; Ye, PD;Wilk, GD;Yang, B;Kwo, J;Chu, SNG;Nakahara, S;Gossmann, HJL;Mannaerts, JP;Hong, M;Ng, KK;others; Ye, PD; Wilk, GD; Yang, B; Kwo, J; Chu, SNG; Nakahara, S; Gossmann, HJL
臺大學術典藏	2018-09-10T04:31:35Z	GaAs metal-oxide-semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition	MINGHWEI HONG; Mannaerts, JP; Hong, M; Ng, KK; others; Ye, PD;Wilk, GD;Yang, B;Kwo, J;Chu, SNG;Nakahara, S;Gossmann, HJL;Mannaerts, JP;Hong, M;Ng, KK;others; Ye, PD; Wilk, GD; Yang, B; Kwo, J; Chu, SNG; Nakahara, S; Gossmann, HJL
臺大學術典藏	2018-09-10T04:31:33Z	GaAs-based MOSFETs with Al/sub 2/O/sub 3/gate dielectrics grown by atomic layer deposition	Ye, PD;Wilk, GD;Yang, B;Kwo, J;Gossmann, H-JL;Frei, M;Chu, SNG;Nakahara, S;Mannaerts, JP;Sergent, M;others; Ye, PD; Wilk, GD; Yang, B; Kwo, J; Gossmann, H-JL; Frei, M; Chu, SNG; Nakahara, S; Mannaerts, JP; Sergent, M; others; MINGHWEI HONG
臺大學術典藏	2018-09-10T04:31:33Z	GaAs-based MOSFETs with Al/sub 2/O/sub 3/gate dielectrics grown by atomic layer deposition	Ye, PD;Wilk, GD;Yang, B;Kwo, J;Gossmann, H-JL;Frei, M;Chu, SNG;Nakahara, S;Mannaerts, JP;Sergent, M;others; Ye, PD; Wilk, GD; Yang, B; Kwo, J; Gossmann, H-JL; Frei, M; Chu, SNG; Nakahara, S; Mannaerts, JP; Sergent, M; others; MINGHWEI HONG
臺大學術典藏	2018-09-10T04:31:32Z	Hydrogen plasma processing of GaAs and AlGaAs	Choquette, Kent D;Freund, RS;Hong, M;Luftman, HS;Chu, SNG;Mannaerts, JP;Wetzel, RC; Choquette, Kent D; Freund, RS; Hong, M; Luftman, HS; Chu, SNG; Mannaerts, JP; Wetzel, RC; MINGHWEI HONG
臺大學術典藏	2018-09-10T04:31:32Z	Hydrogen plasma processing of GaAs and AlGaAs	Choquette, Kent D;Freund, RS;Hong, M;Luftman, HS;Chu, SNG;Mannaerts, JP;Wetzel, RC; Choquette, Kent D; Freund, RS; Hong, M; Luftman, HS; Chu, SNG; Mannaerts, JP; Wetzel, RC; MINGHWEI HONG
臺大學術典藏	2018-09-10T04:31:32Z	GaAs surface reconstruction obtained using a dry process	Choquette, Kent D;Hong, M;Luftman, HS;Chu, SNG;Mannaerts, JP;Wetzel, RC;Freund, RS; Choquette, Kent D; Hong, M; Luftman, HS; Chu, SNG; Mannaerts, JP; Wetzel, RC; Freund, RS; MINGHWEI HONG
臺大學術典藏	2018-09-10T04:31:32Z	GaAs surface reconstruction obtained using a dry process	Choquette, Kent D;Hong, M;Luftman, HS;Chu, SNG;Mannaerts, JP;Wetzel, RC;Freund, RS; Choquette, Kent D; Hong, M; Luftman, HS; Chu, SNG; Mannaerts, JP; Wetzel, RC; Freund, RS; MINGHWEI HONG
臺大學術典藏	2018-09-10T04:31:32Z	Hydrogen plasma removal of AlGaAs oxides before molecular beam epitaxy	Choquette, Kent D;Hong, M;Chu, SNG;Luftman, HS;Mannaerts, JP;Wetzel, RC;Freund, RS; Choquette, Kent D; Hong, M; Chu, SNG; Luftman, HS; Mannaerts, JP; Wetzel, RC; Freund, RS; MINGHWEI HONG
臺大學術典藏	2018-09-10T04:31:32Z	Hydrogen plasma removal of AlGaAs oxides before molecular beam epitaxy	Choquette, Kent D;Hong, M;Chu, SNG;Luftman, HS;Mannaerts, JP;Wetzel, RC;Freund, RS; Choquette, Kent D; Hong, M; Chu, SNG; Luftman, HS; Mannaerts, JP; Wetzel, RC; Freund, RS; MINGHWEI HONG

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