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Institution	Date	Title	Author
臺大學術典藏	2018-09-10T05:21:10Z	Ga203 films for electronic and optoelectronic ap	Passlack, M;Schubert, EF;Hobson, WS;Hong, M;Moriya, N;Chu, SNG;Konstadinidis, K;Mannaerts, JP;Schnoes, ML;Zydzik, GJ; Passlack, M; Schubert, EF; Hobson, WS; Hong, M; Moriya, N; Chu, SNG; Konstadinidis, K; Mannaerts, JP; Schnoes, ML; Zydzik, GJ; MINGHWEI HONG
臺大學術典藏	2018-09-10T05:21:10Z	Ga203 films for electronic and optoelectronic ap	Passlack, M;Schubert, EF;Hobson, WS;Hong, M;Moriya, N;Chu, SNG;Konstadinidis, K;Mannaerts, JP;Schnoes, ML;Zydzik, GJ; Passlack, M; Schubert, EF; Hobson, WS; Hong, M; Moriya, N; Chu, SNG; Konstadinidis, K; Mannaerts, JP; Schnoes, ML; Zydzik, GJ; MINGHWEI HONG
臺大學術典藏	2018-09-10T04:51:57Z	In-situ process for AlGaAs compound semiconductor: Materials science and device fabrication	Hong, M;Choquette, KD;Mannaerts, JP;Grober, LH;Freund, RS;Vakhshoori, D;Chu, SNG;Luftman, HS;Wetzel, RC; Hong, M; Choquette, KD; Mannaerts, JP; Grober, LH; Freund, RS; Vakhshoori, D; Chu, SNG; Luftman, HS; Wetzel, RC; MINGHWEI HONG
臺大學術典藏	2018-09-10T04:51:57Z	In-situ process for AlGaAs compound semiconductor: Materials science and device fabrication	Hong, M;Choquette, KD;Mannaerts, JP;Grober, LH;Freund, RS;Vakhshoori, D;Chu, SNG;Luftman, HS;Wetzel, RC; Hong, M; Choquette, KD; Mannaerts, JP; Grober, LH; Freund, RS; Vakhshoori, D; Chu, SNG; Luftman, HS; Wetzel, RC; MINGHWEI HONG
臺大學術典藏	2018-09-10T04:51:57Z	Interfacial characteristics of AlGaAs after insitu electron cyclotron resonance plasma etching and molecular beam epitaxial regrowth	Hong, M;Mannaerts, JP;Grober, L;Chu, SNG;Luftman, HS;Choquette, KD;Freund, RS; Hong, M; Mannaerts, JP; Grober, L; Chu, SNG; Luftman, HS; Choquette, KD; Freund, RS; MINGHWEI HONG
臺大學術典藏	2018-09-10T04:51:57Z	Interfacial characteristics of AlGaAs after insitu electron cyclotron resonance plasma etching and molecular beam epitaxial regrowth	Hong, M;Mannaerts, JP;Grober, L;Chu, SNG;Luftman, HS;Choquette, KD;Freund, RS; Hong, M; Mannaerts, JP; Grober, L; Chu, SNG; Luftman, HS; Choquette, KD; Freund, RS; MINGHWEI HONG
臺大學術典藏	2018-09-10T04:51:56Z	Interface analysis of dry etched and molecular beam epitaxial regrown AlGaAs	Grober, LH; Hong, M; Mannaerts, JP; Freund, RS; Luftman, HS; Chu, SNG; MINGHWEI HONG; Grober, LH;Hong, M;Mannaerts, JP;Freund, RS;Luftman, HS;Chu, SNG
臺大學術典藏	2018-09-10T04:51:56Z	Interface analysis of dry etched and molecular beam epitaxial regrown AlGaAs	Grober, LH; Hong, M; Mannaerts, JP; Freund, RS; Luftman, HS; Chu, SNG; MINGHWEI HONG; Grober, LH;Hong, M;Mannaerts, JP;Freund, RS;Luftman, HS;Chu, SNG
臺大學術典藏	2018-09-10T04:31:35Z	GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition	Ye, PD;Wilk, GD;Kwo, J;Yang, BAYB;Gossmann, H-JL;Frei, MAFM;Chu, SNG;Mannaerts, JP;Sergent, MASM;Hong, MAHM;others; Ye, PD; Wilk, GD; Kwo, J; Yang, BAYB; Gossmann, H-JL; Frei, MAFM; Chu, SNG; Mannaerts, JP; Sergent, MASM; Hong, MAHM; others; MINGHWEI HONG
臺大學術典藏	2018-09-10T04:31:35Z	GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition	Ye, PD;Wilk, GD;Kwo, J;Yang, BAYB;Gossmann, H-JL;Frei, MAFM;Chu, SNG;Mannaerts, JP;Sergent, MASM;Hong, MAHM;others; Ye, PD; Wilk, GD; Kwo, J; Yang, BAYB; Gossmann, H-JL; Frei, MAFM; Chu, SNG; Mannaerts, JP; Sergent, MASM; Hong, MAHM; others; MINGHWEI HONG
臺大學術典藏	2018-09-10T04:31:35Z	GaAs metal-oxide-semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition	MINGHWEI HONG; Mannaerts, JP; Hong, M; Ng, KK; others; Ye, PD;Wilk, GD;Yang, B;Kwo, J;Chu, SNG;Nakahara, S;Gossmann, HJL;Mannaerts, JP;Hong, M;Ng, KK;others; Ye, PD; Wilk, GD; Yang, B; Kwo, J; Chu, SNG; Nakahara, S; Gossmann, HJL
臺大學術典藏	2018-09-10T04:31:35Z	GaAs metal-oxide-semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition	MINGHWEI HONG; Mannaerts, JP; Hong, M; Ng, KK; others; Ye, PD;Wilk, GD;Yang, B;Kwo, J;Chu, SNG;Nakahara, S;Gossmann, HJL;Mannaerts, JP;Hong, M;Ng, KK;others; Ye, PD; Wilk, GD; Yang, B; Kwo, J; Chu, SNG; Nakahara, S; Gossmann, HJL
臺大學術典藏	2018-09-10T04:31:33Z	GaAs-based MOSFETs with Al/sub 2/O/sub 3/gate dielectrics grown by atomic layer deposition	Ye, PD;Wilk, GD;Yang, B;Kwo, J;Gossmann, H-JL;Frei, M;Chu, SNG;Nakahara, S;Mannaerts, JP;Sergent, M;others; Ye, PD; Wilk, GD; Yang, B; Kwo, J; Gossmann, H-JL; Frei, M; Chu, SNG; Nakahara, S; Mannaerts, JP; Sergent, M; others; MINGHWEI HONG
臺大學術典藏	2018-09-10T04:31:33Z	GaAs-based MOSFETs with Al/sub 2/O/sub 3/gate dielectrics grown by atomic layer deposition	Ye, PD;Wilk, GD;Yang, B;Kwo, J;Gossmann, H-JL;Frei, M;Chu, SNG;Nakahara, S;Mannaerts, JP;Sergent, M;others; Ye, PD; Wilk, GD; Yang, B; Kwo, J; Gossmann, H-JL; Frei, M; Chu, SNG; Nakahara, S; Mannaerts, JP; Sergent, M; others; MINGHWEI HONG
臺大學術典藏	2018-09-10T04:31:32Z	Hydrogen plasma processing of GaAs and AlGaAs	Choquette, Kent D;Freund, RS;Hong, M;Luftman, HS;Chu, SNG;Mannaerts, JP;Wetzel, RC; Choquette, Kent D; Freund, RS; Hong, M; Luftman, HS; Chu, SNG; Mannaerts, JP; Wetzel, RC; MINGHWEI HONG
臺大學術典藏	2018-09-10T04:31:32Z	Hydrogen plasma processing of GaAs and AlGaAs	Choquette, Kent D;Freund, RS;Hong, M;Luftman, HS;Chu, SNG;Mannaerts, JP;Wetzel, RC; Choquette, Kent D; Freund, RS; Hong, M; Luftman, HS; Chu, SNG; Mannaerts, JP; Wetzel, RC; MINGHWEI HONG
臺大學術典藏	2018-09-10T04:31:32Z	GaAs surface reconstruction obtained using a dry process	Choquette, Kent D;Hong, M;Luftman, HS;Chu, SNG;Mannaerts, JP;Wetzel, RC;Freund, RS; Choquette, Kent D; Hong, M; Luftman, HS; Chu, SNG; Mannaerts, JP; Wetzel, RC; Freund, RS; MINGHWEI HONG
臺大學術典藏	2018-09-10T04:31:32Z	GaAs surface reconstruction obtained using a dry process	Choquette, Kent D;Hong, M;Luftman, HS;Chu, SNG;Mannaerts, JP;Wetzel, RC;Freund, RS; Choquette, Kent D; Hong, M; Luftman, HS; Chu, SNG; Mannaerts, JP; Wetzel, RC; Freund, RS; MINGHWEI HONG
臺大學術典藏	2018-09-10T04:31:32Z	Hydrogen plasma removal of AlGaAs oxides before molecular beam epitaxy	Choquette, Kent D;Hong, M;Chu, SNG;Luftman, HS;Mannaerts, JP;Wetzel, RC;Freund, RS; Choquette, Kent D; Hong, M; Chu, SNG; Luftman, HS; Mannaerts, JP; Wetzel, RC; Freund, RS; MINGHWEI HONG
臺大學術典藏	2018-09-10T04:31:32Z	Hydrogen plasma removal of AlGaAs oxides before molecular beam epitaxy	Choquette, Kent D;Hong, M;Chu, SNG;Luftman, HS;Mannaerts, JP;Wetzel, RC;Freund, RS; Choquette, Kent D; Hong, M; Chu, SNG; Luftman, HS; Mannaerts, JP; Wetzel, RC; Freund, RS; MINGHWEI HONG
臺大學術典藏	2018-09-10T04:31:31Z	Vacuum integrated fabrication of vertical-cavity surface emitting lasers	Choquette, Kent D;Hong, M;Freund, RS;Chu, SNG;Wetzel, RC;Mannaerts, JP;Leibenguth, RE; Choquette, Kent D; Hong, M; Freund, RS; Chu, SNG; Wetzel, RC; Mannaerts, JP; Leibenguth, RE; MINGHWEI HONG
臺大學術典藏	2018-09-10T04:31:31Z	Vacuum integrated fabrication of vertical-cavity surface emitting lasers	Choquette, Kent D;Hong, M;Freund, RS;Chu, SNG;Wetzel, RC;Mannaerts, JP;Leibenguth, RE; Choquette, Kent D; Hong, M; Freund, RS; Chu, SNG; Wetzel, RC; Mannaerts, JP; Leibenguth, RE; MINGHWEI HONG
臺大學術典藏	2018-09-10T04:31:31Z	Vacuum Integrated Fabrication of Buried Heterostructure Edge Emitting Laser Diodes	Hong, M;Vahkshoori, D;Grober, LH;Mannaerts, JP;Chu, SNG;Wynn, JD;Freund, RS; Hong, M; Vahkshoori, D; Grober, LH; Mannaerts, JP; Chu, SNG; Wynn, JD; Freund, RS; MINGHWEI HONG
臺大學術典藏	2018-09-10T04:31:31Z	Vacuum Integrated Fabrication of Buried Heterostructure Edge Emitting Laser Diodes	Hong, M;Vahkshoori, D;Grober, LH;Mannaerts, JP;Chu, SNG;Wynn, JD;Freund, RS; Hong, M; Vahkshoori, D; Grober, LH; Mannaerts, JP; Chu, SNG; Wynn, JD; Freund, RS; MINGHWEI HONG
臺大學術典藏	2018-09-10T04:31:30Z	Buried AlGaAs/GaAs/InGaAs laser diodes fabricated by in-situ anisotropic etching and molecular beam epitaxy	Vakhshoori, D;Hong, M;Grober, LH;Mannaerts, JP;Chu, SNG;Wynn, JD;Freund, RS; Vakhshoori, D; Hong, M; Grober, LH; Mannaerts, JP; Chu, SNG; Wynn, JD; Freund, RS; MINGHWEI HONG
臺大學術典藏	2018-09-10T04:31:30Z	Buried AlGaAs/GaAs/InGaAs laser diodes fabricated by in-situ anisotropic etching and molecular beam epitaxy	Vakhshoori, D;Hong, M;Grober, LH;Mannaerts, JP;Chu, SNG;Wynn, JD;Freund, RS; Vakhshoori, D; Hong, M; Grober, LH; Mannaerts, JP; Chu, SNG; Wynn, JD; Freund, RS; MINGHWEI HONG
臺大學術典藏	2018-09-10T04:11:35Z	Single-crystal GaN/Gd2O3/GaN heterostructure	MINGHWEI HONG; Lee, CM; Chyi, JI; Anselm, KA; Cho, AY; Ng, HM; Kortan, AR; Mannaerts, JP; Chu, SNG; Kwo, J; Hong, M;Kwo, J;Chu, SNG;Mannaerts, JP;Kortan, AR;Ng, HM;Cho, AY;Anselm, KA;Lee, CM;Chyi, JI; Hong, M
臺大學術典藏	2018-09-10T04:11:35Z	Single-crystal GaN/Gd2O3/GaN heterostructure	MINGHWEI HONG; Lee, CM; Chyi, JI; Anselm, KA; Cho, AY; Ng, HM; Kortan, AR; Mannaerts, JP; Chu, SNG; Kwo, J; Hong, M;Kwo, J;Chu, SNG;Mannaerts, JP;Kortan, AR;Ng, HM;Cho, AY;Anselm, KA;Lee, CM;Chyi, JI; Hong, M
臺大學術典藏	2018-09-10T04:11:34Z	Periodic index separate confinement heterostructure InGaAs/AlGaAs quantum well lasers grown by temperature modulation molecular beam epitaxy	Hong, M;Chen, YK;Wu, MC;V;enberg, JM;Chu, SNG;Mannaerts, JP;Chin, MA; Hong, M; Chen, YK; Wu, MC; V; enberg, JM; Chu, SNG; Mannaerts, JP; Chin, MA; MINGHWEI HONG
臺大學術典藏	2018-09-10T04:11:34Z	Periodic index separate confinement heterostructure InGaAs/AlGaAs quantum well lasers grown by temperature modulation molecular beam epitaxy	Hong, M;Chen, YK;Wu, MC;V;enberg, JM;Chu, SNG;Mannaerts, JP;Chin, MA; Hong, M; Chen, YK; Wu, MC; V; enberg, JM; Chu, SNG; Mannaerts, JP; Chin, MA; MINGHWEI HONG
臺大學術典藏	2018-09-10T04:11:32Z	GaN/Gd2O3/GaN Single Crystal Heterostructure	Hong, M;Kwo, J;Chu, SNG;Mannaerts, JP;Kortan, AR;Ng, HM;Cho, AY;Anselm, KA;Lee, CM;Chyi, JI; Hong, M; Kwo, J; Chu, SNG; Mannaerts, JP; Kortan, AR; Ng, HM; Cho, AY; Anselm, KA; Lee, CM; Chyi, JI; MINGHWEI HONG
臺大學術典藏	2018-09-10T04:11:32Z	GaN/Gd2O3/GaN Single Crystal Heterostructure	Hong, M;Kwo, J;Chu, SNG;Mannaerts, JP;Kortan, AR;Ng, HM;Cho, AY;Anselm, KA;Lee, CM;Chyi, JI; Hong, M; Kwo, J; Chu, SNG; Mannaerts, JP; Kortan, AR; Ng, HM; Cho, AY; Anselm, KA; Lee, CM; Chyi, JI; MINGHWEI HONG
臺大學術典藏	2018-09-10T04:11:31Z	Molecular beam epitaxial regrowth on insitu plasma-etched AlAs/AlGaAs heterostructures	Choquette, Kent D;Hong, M;Freund, RS;Chu, SNG;Mannaerts, JP;Wetzel, RC;Leibenguth, RE; Choquette, Kent D; Hong, M; Freund, RS; Chu, SNG; Mannaerts, JP; Wetzel, RC; Leibenguth, RE; MINGHWEI HONG
臺大學術典藏	2018-09-10T04:11:31Z	Molecular beam epitaxial regrowth on insitu plasma-etched AlAs/AlGaAs heterostructures	Choquette, Kent D;Hong, M;Freund, RS;Chu, SNG;Mannaerts, JP;Wetzel, RC;Leibenguth, RE; Choquette, Kent D; Hong, M; Freund, RS; Chu, SNG; Mannaerts, JP; Wetzel, RC; Leibenguth, RE; MINGHWEI HONG
臺大學術典藏	2018-09-10T03:46:47Z	Properties of high k gate dielectrics Gd2O3 and Y2O3 for Si	MINGHWEI HONG; others; Lay, TS; Sapjeta, BJ; Chu, SNG; Muller, DA; Opila, RL; Chabal, YJ; Kwo, J;Hong, M;Kortan, AR;Queeney, KL;Chabal, YJ;Opila, RL;Muller, DA;Chu, SNG;Sapjeta, BJ;Lay, TS;others; Kwo, J; Hong, M; Kortan, AR; Queeney, KL
臺大學術典藏	2018-09-10T03:46:47Z	Properties of high k gate dielectrics Gd2O3 and Y2O3 for Si	MINGHWEI HONG; others; Lay, TS; Sapjeta, BJ; Chu, SNG; Muller, DA; Opila, RL; Chabal, YJ; Kwo, J;Hong, M;Kortan, AR;Queeney, KL;Chabal, YJ;Opila, RL;Muller, DA;Chu, SNG;Sapjeta, BJ;Lay, TS;others; Kwo, J; Hong, M; Kortan, AR; Queeney, KL
臺大學術典藏	2018-09-10T03:46:45Z	Properties of High kappa Gate Dielectrics Gd_2O_3, Y_2O_3, and yttria stabilized ZrO2 for Si	Kwo, J;Hong, M;Kortan, AR;Queeney, KL;Chabal Opila Jr, YJ;Muller, DA;Chu, SNG;Sapjeta, BJ;Mannaerts, JP;Boone, T;others; Kwo, J; Hong, M; Kortan, AR; Queeney, KL; Chabal Opila Jr, YJ; Muller, DA; Chu, SNG; Sapjeta, BJ; Mannaerts, JP; Boone, T; others; MINGHWEI HONG
臺大學術典藏	2018-09-10T03:46:45Z	Properties of High kappa Gate Dielectrics Gd_2O_3, Y_2O_3, and yttria stabilized ZrO2 for Si	Kwo, J;Hong, M;Kortan, AR;Queeney, KL;Chabal Opila Jr, YJ;Muller, DA;Chu, SNG;Sapjeta, BJ;Mannaerts, JP;Boone, T;others; Kwo, J; Hong, M; Kortan, AR; Queeney, KL; Chabal Opila Jr, YJ; Muller, DA; Chu, SNG; Sapjeta, BJ; Mannaerts, JP; Boone, T; others; MINGHWEI HONG
臺大學術典藏	2018-09-10T03:46:43Z	Reduced current thresholds in GaAs/AlGaAs vertical cavity surface emitting lasers using 4° off-oriented (001) GaAs substrates	Wang, YH; Tai, K; Hsieh, YF; Chu, SNG; Wynn, JD; Hong, M; Fischer, RJ; Cho, AY; MINGHWEI HONG
臺大學術典藏	1997	Demonstration of Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/)/InGaAs enhancement-mode n-channel MOSFETs	Lothian, JR; Mannaerts, JP; Kwo, J; Chu, SNG; Lin, J; others; MINGHWEI HONG; Tsai, HS; Hobson, WS; Kuo, JM; Hong, M; Ren, F

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