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臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)
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Showing items 21-45 of 55  (3 Page(s) Totally)
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Institution Date Title Author
臺大學術典藏 2018-09-10T04:51:57Z Interfacial characteristics of AlGaAs after insitu electron cyclotron resonance plasma etching and molecular beam epitaxial regrowth Hong, M;Mannaerts, JP;Grober, L;Chu, SNG;Luftman, HS;Choquette, KD;Freund, RS; Hong, M; Mannaerts, JP; Grober, L; Chu, SNG; Luftman, HS; Choquette, KD; Freund, RS; MINGHWEI HONG
臺大學術典藏 2018-09-10T04:51:56Z Interface analysis of dry etched and molecular beam epitaxial regrown AlGaAs Grober, LH; Hong, M; Mannaerts, JP; Freund, RS; Luftman, HS; Chu, SNG; MINGHWEI HONG; Grober, LH;Hong, M;Mannaerts, JP;Freund, RS;Luftman, HS;Chu, SNG
臺大學術典藏 2018-09-10T04:51:56Z Interface analysis of dry etched and molecular beam epitaxial regrown AlGaAs Grober, LH; Hong, M; Mannaerts, JP; Freund, RS; Luftman, HS; Chu, SNG; MINGHWEI HONG; Grober, LH;Hong, M;Mannaerts, JP;Freund, RS;Luftman, HS;Chu, SNG
臺大學術典藏 2018-09-10T04:31:35Z GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition Ye, PD;Wilk, GD;Kwo, J;Yang, BAYB;Gossmann, H-JL;Frei, MAFM;Chu, SNG;Mannaerts, JP;Sergent, MASM;Hong, MAHM;others; Ye, PD; Wilk, GD; Kwo, J; Yang, BAYB; Gossmann, H-JL; Frei, MAFM; Chu, SNG; Mannaerts, JP; Sergent, MASM; Hong, MAHM; others; MINGHWEI HONG
臺大學術典藏 2018-09-10T04:31:35Z GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition Ye, PD;Wilk, GD;Kwo, J;Yang, BAYB;Gossmann, H-JL;Frei, MAFM;Chu, SNG;Mannaerts, JP;Sergent, MASM;Hong, MAHM;others; Ye, PD; Wilk, GD; Kwo, J; Yang, BAYB; Gossmann, H-JL; Frei, MAFM; Chu, SNG; Mannaerts, JP; Sergent, MASM; Hong, MAHM; others; MINGHWEI HONG
臺大學術典藏 2018-09-10T04:31:35Z GaAs metal-oxide-semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition MINGHWEI HONG; Mannaerts, JP; Hong, M; Ng, KK; others; Ye, PD;Wilk, GD;Yang, B;Kwo, J;Chu, SNG;Nakahara, S;Gossmann, HJL;Mannaerts, JP;Hong, M;Ng, KK;others; Ye, PD; Wilk, GD; Yang, B; Kwo, J; Chu, SNG; Nakahara, S; Gossmann, HJL
臺大學術典藏 2018-09-10T04:31:35Z GaAs metal-oxide-semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition MINGHWEI HONG; Mannaerts, JP; Hong, M; Ng, KK; others; Ye, PD;Wilk, GD;Yang, B;Kwo, J;Chu, SNG;Nakahara, S;Gossmann, HJL;Mannaerts, JP;Hong, M;Ng, KK;others; Ye, PD; Wilk, GD; Yang, B; Kwo, J; Chu, SNG; Nakahara, S; Gossmann, HJL
臺大學術典藏 2018-09-10T04:31:33Z GaAs-based MOSFETs with Al/sub 2/O/sub 3/gate dielectrics grown by atomic layer deposition Ye, PD;Wilk, GD;Yang, B;Kwo, J;Gossmann, H-JL;Frei, M;Chu, SNG;Nakahara, S;Mannaerts, JP;Sergent, M;others; Ye, PD; Wilk, GD; Yang, B; Kwo, J; Gossmann, H-JL; Frei, M; Chu, SNG; Nakahara, S; Mannaerts, JP; Sergent, M; others; MINGHWEI HONG
臺大學術典藏 2018-09-10T04:31:33Z GaAs-based MOSFETs with Al/sub 2/O/sub 3/gate dielectrics grown by atomic layer deposition Ye, PD;Wilk, GD;Yang, B;Kwo, J;Gossmann, H-JL;Frei, M;Chu, SNG;Nakahara, S;Mannaerts, JP;Sergent, M;others; Ye, PD; Wilk, GD; Yang, B; Kwo, J; Gossmann, H-JL; Frei, M; Chu, SNG; Nakahara, S; Mannaerts, JP; Sergent, M; others; MINGHWEI HONG
臺大學術典藏 2018-09-10T04:31:32Z Hydrogen plasma processing of GaAs and AlGaAs Choquette, Kent D;Freund, RS;Hong, M;Luftman, HS;Chu, SNG;Mannaerts, JP;Wetzel, RC; Choquette, Kent D; Freund, RS; Hong, M; Luftman, HS; Chu, SNG; Mannaerts, JP; Wetzel, RC; MINGHWEI HONG
臺大學術典藏 2018-09-10T04:31:32Z Hydrogen plasma processing of GaAs and AlGaAs Choquette, Kent D;Freund, RS;Hong, M;Luftman, HS;Chu, SNG;Mannaerts, JP;Wetzel, RC; Choquette, Kent D; Freund, RS; Hong, M; Luftman, HS; Chu, SNG; Mannaerts, JP; Wetzel, RC; MINGHWEI HONG
臺大學術典藏 2018-09-10T04:31:32Z GaAs surface reconstruction obtained using a dry process Choquette, Kent D;Hong, M;Luftman, HS;Chu, SNG;Mannaerts, JP;Wetzel, RC;Freund, RS; Choquette, Kent D; Hong, M; Luftman, HS; Chu, SNG; Mannaerts, JP; Wetzel, RC; Freund, RS; MINGHWEI HONG
臺大學術典藏 2018-09-10T04:31:32Z GaAs surface reconstruction obtained using a dry process Choquette, Kent D;Hong, M;Luftman, HS;Chu, SNG;Mannaerts, JP;Wetzel, RC;Freund, RS; Choquette, Kent D; Hong, M; Luftman, HS; Chu, SNG; Mannaerts, JP; Wetzel, RC; Freund, RS; MINGHWEI HONG
臺大學術典藏 2018-09-10T04:31:32Z Hydrogen plasma removal of AlGaAs oxides before molecular beam epitaxy Choquette, Kent D;Hong, M;Chu, SNG;Luftman, HS;Mannaerts, JP;Wetzel, RC;Freund, RS; Choquette, Kent D; Hong, M; Chu, SNG; Luftman, HS; Mannaerts, JP; Wetzel, RC; Freund, RS; MINGHWEI HONG
臺大學術典藏 2018-09-10T04:31:32Z Hydrogen plasma removal of AlGaAs oxides before molecular beam epitaxy Choquette, Kent D;Hong, M;Chu, SNG;Luftman, HS;Mannaerts, JP;Wetzel, RC;Freund, RS; Choquette, Kent D; Hong, M; Chu, SNG; Luftman, HS; Mannaerts, JP; Wetzel, RC; Freund, RS; MINGHWEI HONG
臺大學術典藏 2018-09-10T04:31:31Z Vacuum integrated fabrication of vertical-cavity surface emitting lasers Choquette, Kent D;Hong, M;Freund, RS;Chu, SNG;Wetzel, RC;Mannaerts, JP;Leibenguth, RE; Choquette, Kent D; Hong, M; Freund, RS; Chu, SNG; Wetzel, RC; Mannaerts, JP; Leibenguth, RE; MINGHWEI HONG
臺大學術典藏 2018-09-10T04:31:31Z Vacuum integrated fabrication of vertical-cavity surface emitting lasers Choquette, Kent D;Hong, M;Freund, RS;Chu, SNG;Wetzel, RC;Mannaerts, JP;Leibenguth, RE; Choquette, Kent D; Hong, M; Freund, RS; Chu, SNG; Wetzel, RC; Mannaerts, JP; Leibenguth, RE; MINGHWEI HONG
臺大學術典藏 2018-09-10T04:31:31Z Vacuum Integrated Fabrication of Buried Heterostructure Edge Emitting Laser Diodes Hong, M;Vahkshoori, D;Grober, LH;Mannaerts, JP;Chu, SNG;Wynn, JD;Freund, RS; Hong, M; Vahkshoori, D; Grober, LH; Mannaerts, JP; Chu, SNG; Wynn, JD; Freund, RS; MINGHWEI HONG
臺大學術典藏 2018-09-10T04:31:31Z Vacuum Integrated Fabrication of Buried Heterostructure Edge Emitting Laser Diodes Hong, M;Vahkshoori, D;Grober, LH;Mannaerts, JP;Chu, SNG;Wynn, JD;Freund, RS; Hong, M; Vahkshoori, D; Grober, LH; Mannaerts, JP; Chu, SNG; Wynn, JD; Freund, RS; MINGHWEI HONG
臺大學術典藏 2018-09-10T04:31:30Z Buried AlGaAs/GaAs/InGaAs laser diodes fabricated by in-situ anisotropic etching and molecular beam epitaxy Vakhshoori, D;Hong, M;Grober, LH;Mannaerts, JP;Chu, SNG;Wynn, JD;Freund, RS; Vakhshoori, D; Hong, M; Grober, LH; Mannaerts, JP; Chu, SNG; Wynn, JD; Freund, RS; MINGHWEI HONG
臺大學術典藏 2018-09-10T04:31:30Z Buried AlGaAs/GaAs/InGaAs laser diodes fabricated by in-situ anisotropic etching and molecular beam epitaxy Vakhshoori, D;Hong, M;Grober, LH;Mannaerts, JP;Chu, SNG;Wynn, JD;Freund, RS; Vakhshoori, D; Hong, M; Grober, LH; Mannaerts, JP; Chu, SNG; Wynn, JD; Freund, RS; MINGHWEI HONG
臺大學術典藏 2018-09-10T04:11:35Z Single-crystal GaN/Gd2O3/GaN heterostructure MINGHWEI HONG; Lee, CM; Chyi, JI; Anselm, KA; Cho, AY; Ng, HM; Kortan, AR; Mannaerts, JP; Chu, SNG; Kwo, J; Hong, M;Kwo, J;Chu, SNG;Mannaerts, JP;Kortan, AR;Ng, HM;Cho, AY;Anselm, KA;Lee, CM;Chyi, JI; Hong, M
臺大學術典藏 2018-09-10T04:11:35Z Single-crystal GaN/Gd2O3/GaN heterostructure MINGHWEI HONG; Lee, CM; Chyi, JI; Anselm, KA; Cho, AY; Ng, HM; Kortan, AR; Mannaerts, JP; Chu, SNG; Kwo, J; Hong, M;Kwo, J;Chu, SNG;Mannaerts, JP;Kortan, AR;Ng, HM;Cho, AY;Anselm, KA;Lee, CM;Chyi, JI; Hong, M
臺大學術典藏 2018-09-10T04:11:34Z Periodic index separate confinement heterostructure InGaAs/AlGaAs quantum well lasers grown by temperature modulation molecular beam epitaxy Hong, M;Chen, YK;Wu, MC;V;enberg, JM;Chu, SNG;Mannaerts, JP;Chin, MA; Hong, M; Chen, YK; Wu, MC; V; enberg, JM; Chu, SNG; Mannaerts, JP; Chin, MA; MINGHWEI HONG
臺大學術典藏 2018-09-10T04:11:34Z Periodic index separate confinement heterostructure InGaAs/AlGaAs quantum well lasers grown by temperature modulation molecular beam epitaxy Hong, M;Chen, YK;Wu, MC;V;enberg, JM;Chu, SNG;Mannaerts, JP;Chin, MA; Hong, M; Chen, YK; Wu, MC; V; enberg, JM; Chu, SNG; Mannaerts, JP; Chin, MA; MINGHWEI HONG

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