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Showing items 1-9 of 9 (1 Page(s) Totally)
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| 國立彰化師範大學 |
2006-09 |
Improvement of Ni Nonalloyed Ohmic Contacts on p-GaN Films by Changing Thickness of p-InGaN Capping Layers
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Chu, Yow-Lin; Lin, Yow-Jon; Ho, Cheng-Hsiang; Chen, Wei-Li |
| 國立彰化師範大學 |
2006-08 |
Effects of the Thickness of Capping Layers on Electrical Properties of Ni Ohmic Contacts on p-AlGaN and p-GaN using an Ohmic Recessed Technique
|
Lin, Yow-Jon; Chu, Yow-Lin |
| 國立彰化師範大學 |
2006-06 |
Optical Properties of Heavily Mg-Doped p-GaN Films Prepared by Reactive Ion Etching
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Lin, Yow-Jon; Chu, Yow-Lin; Liu, Day-Shan; Lee, Chi-Sen; Chien, Feng-Tso |
| 國立彰化師範大學 |
2006-04 |
Induced Changes in Surface Band Bending of n-type and p-type AlGaN by Oxidation and Wet Chemical Treatments
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Lin, Yow-Jon; Chu, Yow-Lin; Lin, Wen-Xiang; Chien, Feng-Tso; Lee, Chi-Sen |
| 國立虎尾科技大學 |
2006 |
Optical Properties of Heavily Mg-Doped p-GaN Films Prepared by Reactive Ion Etching
|
Lin, Yow-Jon;Chu, Yow-Lin;Liu, Day-Shan;Lee, Chi-Sen;Chien, Feng-Tso |
| 國立彰化師範大學 |
2005-11 |
Schottky Barrier Heights of Ni/Au Contacts to Heavily Mg-doped P-GaN Films with and Without (NH4)2Sx Treatment from Current-voltage Measurements
|
You, Chang-Feng; Chu, Yow-Lin; Lin, Yow-Jon |
| 國立彰化師範大學 |
2005-11 |
Effects of Reactive Ion Etching on Optical and Electrical Properties of Heavily Mg-doped P-type GaN
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Chu, Yow-Lin; Lin, Yow-Jon |
| 國立彰化師範大學 |
2005-05 |
Optical and Electrical Properties of Heavily Mg-doped GaN upon (NH4)2Sx Treatment
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Lin, Yow-Jon; Chu, Yow-Lin; Huang, Y. S. ; Chang, Hsing-Cheng |
| 國立彰化師範大學 |
2005-05 |
Effect of Reactive Ion Etching-induced Defects on the Surface Band Bending of Heavily Mg-doped p-type GaN
|
Lin, Yow-Jon; Chu, Yow-Lin |
Showing items 1-9 of 9 (1 Page(s) Totally)
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