| 國立交通大學 |
2015-07-21T08:31:16Z |
Investigation and Optimization of Monolithic 3D Logic Circuits and SRAM Cells Considering Interlayer Coupling
|
Fan, Ming-Long; Hu, Vita Pi-Ho; Chen, Yin-Nien; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2015-07-21T08:31:11Z |
Evaluation of Transient Voltage Collapse Write-Assist for GeOI and SOI FinFET SRAM Cells
|
Hu, Vita Pi-Ho; Fan, Ming-Long; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2015-07-21T08:31:00Z |
A 40nm 1.0Mb 6T Pipeline SRAM with Digital-Based Bit-Line Under-Drive, Three-Step-Up Word-Line, Adaptive Data-Aware Write-Assist with VCS Tracking and Adaptive Voltage Detector for Boosting Control
|
Liao, Wei-Nan; Lien, Nan-Chun; Chang, Chi-Shin; Chu, Li-Wei; Yang, Hao-I; Chuang, Ching-Te; Jou, Shyh-Jye; Hwang, Wei; Tu, Ming-Hsien; Huang, Huan-Shun; Wang, Jian-Hao; Kan, Paul-Sen; Hu, Yong-Jyun |
| 國立交通大學 |
2015-07-21T08:30:59Z |
Method for Resolving Simultaneous Same-Row Access In Dual-Port 8T SRAM with Asynchronous Dual-Clock Operation
|
Lien, Nan-Chun; Chuang, Ching-Te; Wu, Wen-Rang |
| 國立交通大學 |
2015-07-21T08:30:58Z |
A Disturb-Free Subthreshold 9T SRAM Cell With Improved Performance and Variation Tolerance
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Lu, Chien-Yu; Chuang, Ching-Te |
| 國立交通大學 |
2015-07-21T08:29:40Z |
A 0.325 V, 600-kHz, 40-nm 72-kb 9T Subthreshold SRAM with Aligned Boosted Write Wordline and Negative Write Bitline Write-Assist
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Lu, Chien-Yu; Chuang, Ching-Te; Jou, Shyh-Jye; Tu, Ming-Hsien; Wu, Ya-Ping; Huang, Chung-Ping; Kan, Paul-Sen; Huang, Huan-Shun; Lee, Kuen-Di; Kao, Yung-Shin |
| 國立交通大學 |
2015-07-21T08:29:05Z |
Investigation of Backgate-Biasing Effect for Ultrathin-Body III-V Heterojunction Tunnel FET
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Fan, Ming-Long; Hu, Vita Pi-Ho; Hsu, Chih-Wei; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2015-07-21T08:29:00Z |
A double-sided, single-chip integration scheme using through-silicon-via for neural sensing applications
|
Chang, Chih-Wei; Chou, Lei-Chun; Huang, Po-Tsang; Wu, Shang-Lin; Lee, Shih-Wei; Chuang, Ching-Te; Chen, Kuan-Neng; Hwang, Wei; Chen, Kuo-Hua; Chiu, Chi-Tsung; Tong, Ho-Ming; Chiou, Jin-Chern |
| 國立交通大學 |
2015-07-21T08:28:07Z |
Analysis of GeOI FinFET 6T SRAM Cells With Variation-Tolerant WLUD Read-Assist and TVC Write-Assist
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Hu, Vita Pi-Ho; Fan, Ming-Long; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2014-12-16T06:15:25Z |
DISTURB-FREE STATIC RANDOM ACCESS MEMORY CELL
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Chuang Ching-Te; Yang Hao-I; Lin Jihi-Yu; Yang Shyh-Chyi; Tu Ming-Hsien; Hwang Wei; Jou Shyh-Jye; Lee Kun-Ti; Li Hung-Yu |
| 國立交通大學 |
2014-12-16T06:15:18Z |
SCHMITT TRIGGER-BASED FINFET SRAM CELL
|
Chuang Ching-Te; Hsieh Chien-Yu; Fan Ming-Long; Hu Pi-Ho; Su Pin |
| 國立交通大學 |
2014-12-16T06:15:18Z |
LOW POWER STATIC RANDOM ACCESS MEMORY
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Chuang Ching-Te; Yang Hao-I; Hsia Mao-Chih; Hwang Wei; Chen Chia-Cheng; Shih Wei-Chiang |
| 國立交通大學 |
2014-12-16T06:15:18Z |
STATIC RANDOM ACCESS MEMORY WITH DATA CONTROLLED POWER SUPPLY
|
Chuang Ching-Te; Yang Hao-I; Hsia Mao-Chih; Lin Yung-Wei; Lu Chien-Yu; Tu Ming-Hsien; Hwang Wei; Jou Shyh-Jye; Chen Chia-Cheng; Shih Wei-Chiang |
| 國立交通大學 |
2014-12-16T06:15:17Z |
DATA-AWARE DYNAMIC SUPPLY RANDOM ACCESS MEMORY
|
Chuang Ching-Te; Yang Hao-I; Lin Yi-Wei; Hwang Wei; Shih Wei-Chiang; Chen Chia-Cheng |
| 國立交通大學 |
2014-12-16T06:15:17Z |
VARIATION-TOLERANT WORD-LINE UNDER-DRIVE SCHEME FOR RANDOM ACCESS MEMORY
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Chuang Ching-Te; Lin Yi-Wei; Chen Chia-Cheng; Shih Wei-Chiang |
| 國立交通大學 |
2014-12-16T06:15:16Z |
ASYMMETRIC VIRTUAL-GROUND SINGLE-ENDED SRAM AND SYSTEM THEREOF
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JOU Shyh-Jye; Lin Jhih-Yu; Chuang Ching-Te; Tu Ming-Hsien; Tsai Ming-Chien |
| 國立交通大學 |
2014-12-16T06:15:14Z |
GATE OXIDE BREAKDOWN-WITHSTANDING POWER SWITCH STRUCTURE
|
YANG Hao-I; Chuang Ching-Te; Hwang Wei |
| 國立交通大學 |
2014-12-16T06:15:00Z |
INDEPENDENTY-CONTROLLED-GATE SRAM
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CHUANG Ching-Te; Chen Yin-Nien; Hsieh Chien-Yu; Fan Ming-Long; Hu Pi-Ho; Su Pin |
| 國立交通大學 |
2014-12-16T06:14:56Z |
SINGLE-ENDED SRAM WITH CROSS-POINT DATA-AWARE WRITE OPERATION
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Jou Shyh-Jye; Lin Jhih-Yu; Chuang Ching-Te; Tu Ming-Hsien; Chiu Yi-Wei |
| 國立交通大學 |
2014-12-16T06:14:56Z |
SRAM based on 6 transistor structure including a first inverter, a second inverter, a first pass-gate transistor, and a second pass-gate transistor
|
CHUANG Ching-Te; Jou Shyh-Jye; Hwang Wei; Lin Yi-Wei; Tsai Ming-Chien; Yang Hao-I; Tu Ming-Hsien; Shih Wei-Chiang; Lien Nan-Chun; Lee Kuen-Di |
| 國立交通大學 |
2014-12-16T06:14:56Z |
Oscillator based on a 6T SRAM for measuring the Bias Temperature Instability
|
Chuang Ching-Te; Jou Shyh-Jye; Hwang Wei; Tsai Ming-Chien; Lin Yi-Wei; Yang Hao-I; Tu Ming-Hsien; Shih Wei-Chiang; Lien Nan-Chun; Lee Kuen-Di |
| 國立交通大學 |
2014-12-16T06:14:50Z |
CONTROL CIRCUIT OF SRAM AND OPERATING METHOD THEREOF
|
CHUANG Ching-Te; LIEN Nan-Chun; LIAO Wei-Nan; CHU Li-Wei; CHANG Chi-Shin; TU Ming-Hsien |
| 國立交通大學 |
2014-12-16T06:14:49Z |
STATIC RANDOM ACCESS MEMORY WITH RIPPLE BIT LINES/SEARCH LINES FOR IMROVING CURRENT LEAKAGE/VARIATION TOLERANCE AND DENSITY/PERFORMANCE
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CHUANG Ching-Te; YANG Hao-I; LU Chien-Yu; CHEN Chien-Hen; CHANG Chi-Shin; HUANG Po-Tsang; LAI Shu-Lin; HWANG Wei; JOU Shyh-Jye; TU Ming-Hsien |
| 國立交通大學 |
2014-12-16T06:14:19Z |
High load driving device
|
Chuang Ching-Te; Lu Chien-Yu |
| 國立交通大學 |
2014-12-16T06:14:14Z |
Schmitt trigger-based finFET SRAM cell
|
Chuang Ching-Te; Hsieh Chien-Yu; Fan Ming-Long; Hu Pi-Ho; Su Pin |
