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Taiwan Academic Institutional Repository >
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"chuang ching te"
Showing items 191-215 of 221 (9 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:29:40Z |
A 0.33-V, 500-kHz, 3.94-mu W 40-nm 72-Kb 9T Subthreshold SRAM With Ripple Bit-Line Structure and Negative Bit-Line Write-Assist
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Lu, Chien-Yu; Tu, Ming-Hsien; Yang, Hao-I; Wu, Ya-Ping; Huang, Huan-Shun; Lin, Yuh-Jiun; Lee, Kuen-Di; Kao, Yung-Shin; Chuang, Ching-Te; Jou, Shyh-Jye; Hwang, Wei |
| 國立交通大學 |
2014-12-08T15:29:40Z |
Variability Analysis of Sense Amplifier for FinFET Subthreshold SRAM Applications
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Fan, Ming-Long; Hu, Vita Pi-Ho; Chen, Yin-Nien; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2014-12-08T15:28:05Z |
Impacts of Random Telegraph Noise on FinFET Devices, 6T SRAM cell, and Logic Circuits
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Fan, Ming-Long; Hu, Vita Pi-Ho; Chen, Yin-Nien; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2014-12-08T15:25:40Z |
TIMING CONTROL DEGRADATION AND NBTI/PBTI TOLERANT DESIGN FOR WRITE-REPLICA CIRCUIT IN NANOSCALE CMOS SRAM
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Yang, Shyh-Chyi; Yang, Hao-I; Chuang, Ching-Te; Hwang, Wei |
| 國立交通大學 |
2014-12-08T15:25:24Z |
Impacts of Contact Resistance and NBTI/PBTI on SRAM with High-kappa Metal-Gate Devices
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Yang, Hao-I; Chuang, Ching-Te; Hwang, Wei |
| 國立交通大學 |
2014-12-08T15:25:21Z |
Investigation of Static Noise Margin of FinFET SRAM Cells in Sub-threshold Region
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Fan, Ming-Long; Wu, Yu-Sheng; Hu, Vita Pi-Ho; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2014-12-08T15:25:19Z |
Impact of Gate-Oxide Breakdown on Power-Gated SRAM
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Yang, Hao-I; Chuang, Ching-Te; Hwang, Wei |
| 國立交通大學 |
2014-12-08T15:24:25Z |
Investigation of Static Noise Margin of Ultra-Thin-Body SOI SRAM Cells in Subthreshold Region using Analytical Solution of Poisson's Equation
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Hu, Vita Pi-Ho; Wu, Yu-Sheng; Fan, Ming-Long; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2014-12-08T15:23:48Z |
"Analysis of Single-Trap-Induced Random Telegraph Noise on FinFET Devices, 6T SRAM Cell, and Logic Circuits"
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Fan, Ming-Long; Hu, Vita Pi-Ho; Chen, Yin-Nien; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2014-12-08T15:23:36Z |
Impacts of NBTI and PBTI on Power-Gated SRAM with High-k Metal-Gate Devices
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Yang, Hao-I; Chuang, Ching-Te; Hwang, Wei |
| 國立交通大學 |
2014-12-08T15:23:33Z |
Independently-Controlled-Gate FinFET Schmitt Trigger Sub-Threshold SRAMs
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Hsieh, Chien-Yu; Fan, Ming-Long; Hu, Vita Pi-Ho; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2014-12-08T15:23:26Z |
Modeling, Analysis, and TCAD of Nanoscale Devices and Circuits
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Chuang, Ching-Te |
| 國立交通大學 |
2014-12-08T15:23:11Z |
A Single-Ended Disturb-Free 9T Subthreshold SRAM With Cross-Point Data-Aware Write Word-Line Structure, Negative Bit-Line, and Adaptive Read Operation Timing Tracing
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Tu, Ming-Hsien; Lin, Jihi-Yu; Tsai, Ming-Chien; Lu, Chien-Yu; Lin, Yuh-Jiun; Wang, Meng-Hsueh; Huang, Huan-Shun; Lee, Kuen-Di; Shih, Wei-Chiang (Willis); Jou, Shyh-Jye; Chuang, Ching-Te |
| 國立交通大學 |
2014-12-08T15:21:46Z |
Energy Efficient Bootstrapped CMOS Large RC-Load Driver Circuit for Ultra Low-Voltage VLSI
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Lu, Chien-Yu; Chuang, Ching-Te |
| 國立交通大學 |
2014-12-08T15:21:25Z |
Band-to-Band-Tunneling Leakage Suppression for Ultra-Thin-Body GeOI MOSFETs Using Transistor Stacking
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Hu, Vita Pi-Ho; Fan, Ming-Long; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2014-12-08T15:21:20Z |
Impacts of Single Trap Induced Random Telegraph Noise on FinFET Devices and SRAM Cell Stability
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Fan, Ming-Long; Hu, Vita Pi-Ho; Chen, Yin-Nien; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2014-12-08T15:21:19Z |
Comprehensive Analysis of UTB GeOI Logic Circuits and 6T SRAM Cells considering Variability and Temperature Sensitivity
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Hu, Vita Pi-Ho; Fan, Ming-Long; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2014-12-08T15:21:19Z |
A High-Performance Low V(MIN) 55nm 512Kb Disturb-Free 8T SRAM with Adaptive VVSS Control
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Yang, Hao-I; Yang, Shih-Chi; Hsia, Mao-Chih; Lin, Yung-Wei; Lin, Yi-Wei; Chen, Chien-Hen; Chang, Chi-Shin; Lin, Geng-Cing; Chen, Yin-Nien; Chuang, Ching-Te; Hwang, Wei; Jou, Shyh-Jye; Lien, Nan-Chun; Li, Hung-Yu; Lee, Kuen-Di; Shih, Wei-Chiang; Wu, Ya-Ping; Lee, Wen-Ta; Hsu, Chih-Chiang |
| 國立交通大學 |
2014-12-08T15:20:11Z |
Impacts of NBTI on SRAM Array with Power Gating Structure
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Yang, Hao-I; Chuang, Ching-Te; Hwang, Wei |
| 國立交通大學 |
2014-12-08T15:19:54Z |
Design and Analysis of Ultra-Thin-Body SOI Based Subthreshold SRAM
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Hu, Vita Pi-Ho; Wu, Yu-Sheng; Fan, Ming-Long; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2014-12-08T15:19:40Z |
Asymmetrical Write-Assist for Single-Ended SRAM Operation
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Lin, Jihi-Yu; Tu, Ming-Hsien; Tsai, Ming-Chien; Jou, Shyh-Jye; Chuang, Ching-Te |
| 國立交通大學 |
2014-12-08T15:12:04Z |
FinFET SRAM Cell Optimization Considering Temporal Variability Due to NBTI/PBTI, Surface Orientation and Various Gate Dielectrics
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Hu, Vita Pi-Ho; Fan, Ming-Long; Hsieh, Chien-Yu; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2014-12-08T15:12:03Z |
Comparison of 4T and 6T FinFET SRAM Cells for Subthreshold Operation Considering Variability-A Model-Based Approach
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Fan, Ming-Long; Wu, Yu-Sheng; Hu, Vita Pi-Ho; Hsieh, Chien-Yu; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2014-12-08T15:10:57Z |
Optimal design of triple-gate devices for high-performance and low-power applications
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Chiang, Meng-Hsueh; Lin, Jeng-Nan; Kim, Keunwoo; Chuang, Ching-Te |
| 國立交通大學 |
2014-12-08T15:10:02Z |
Selective Device Structure Scaling and Parasitics Engineering: A Way to Extend the Technology Roadmap
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Wei, Lan; Deng, Jie; Chang, Li-Wen; Kim, Keunwoo; Chuang, Ching-Te; Wong, H. -S. Philip |
Showing items 191-215 of 221 (9 Page(s) Totally)
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